Agilent ATF-53189 Enhancement Mode [1] Pseudomorphic HEMT in SOT 89 Package Data Sheet Features • Single voltage operation • High Linearity and Gain • Low Noise Figure Description Agilent Technologies’s ATF-53189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a high-linearity, low noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. Pin Connections and Package Marking S • Point MTTF > 300 years[2] • MSL-1 and lead-free • Tape-and-Reel packaging option available 3GX Specifications 2 GHz, 4.0V, 135 mA (Typ.) G S Top View D S ATF-53189 is ideally suited for Cellular/PCS and WCDMA wireless infrastructure, WLAN, WLL and MMDS application, and general purpose discrete E-pHEMT amplifiers which require medium power and high linearity. All devices are 100% RF and DC tested. • Excellent uniformity in product specifications • SOT 89 standard package • 40.0 dBm Output IP3 • 23.0 dBm Output Power at 1dB gain compression • 0.85 dB Noise Figure • 15.5 dB Gain • 46% PAE at P1dB D S G Bottom View Notes: Package marking provides orientation and identification: “3G” = Device Code “x” = Month code indicates the month of manufacture. D = Drain S = Source G = Gate • LFOM[3] 12.7 dB Applications • Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver Amplifier for WLAN, WLL/ RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power. ATF-53189 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum Vds Drain–Source Voltage[2] V 7 Vgs Gate–Source Voltage[2] V -5 to 1.0 Vgd Gate Drain Voltage[2] V -5 to 1.0 Ids Drain Current[2] mA 300 Igs Gate Current mA 20 Pdiss Total Power Dissipation[3] W 1.0 Pin max. RF Input Power dBm +24 Tch Channel Temperature °C 150 Tstg Storage Temperature °C -65 to 150 Thermal Resistance[2,4] θch-b = 70°C/W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assuming DC quiescent conditions. 3. Board (package belly) temperature TB is 25°C. Derate 14.30 mW/°C for TB > 80°C. 4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method. ATF-53189 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4.0V and Ids = 135 mA unless otherwise specified. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.0V, Ids = 135 mA V — 0.65 — Vth Threshold Voltage Vds = 4.0V, Ids = 8 mA V — 0.30 — Ids Drain to Source Current Vds = 4.0V, Vgs = 0V µA — 3.70 — Gm Transconductance Vds = 4.0V, Gm = ∆Ids/∆Vgs; ∆Vgs = Vgs1 – Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V mmho — 650 — Igss Gate Leakage Current Vds = 0V, Vgs = -4V µA -10.0 -0.34 — NF Noise Figure f = 2 GHz f = 900 MHz dB dB — — 0.85 0.80 — — G Gain [1] f = 2 GHz f = 900 MHz dB dB 14.0 — 15.5 17.2 17.0 — OIP3 Output 3rd Order Intercept Point [1] f = 2 GHz f = 900 MHz dBm dBm 36.0 — 40.0 42.0 — — P1dB Output 1dB Compressed[1] f = 2 GHz f = 900 MHz dBm dBm — — 23.0 21.7 — — PAE Power Added Efficiency f = 2 GHz f = 900 MHz % % — — 46.0 33.8 — — ACLR Adjacent Channel Leakage Power Ratio [1,2] Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc — — -54.0 -64.0 — — Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1. 2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -8 dBm - Channel Integrate Bandwidth = 3.84 MHz 2 Input Matching Circuit Γ_mag=0.74 Γ_ang=-112.4° Input Output Matching Circuit Γ_mag=0.40 Γ_ang=-120.0° DUT Output Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. Product Consistency Distribution Charts [1,2] 150 150 Stdev=0.08 Stdev=0.86 120 FREQUENCY FREQUENCY 120 90 –3 Std +3 Std 60 90 –3 Std +3 Std 60 30 30 0 0 .5 36 37 38 39 40 41 42 43 44 45 .6 .7 .8 1 1.1 Figure 3. NF @ 2 GHz, 4V, 135 mA. USL = 1.30 dBm, Nominal = 0.84 dBm. Figure 2. OIP3 @ 2 GHz, 4V, 135 mA. LSL = 36 dBm, Nominal = 40 dBm. 150 150 Stdev=1.14 Stdev=0.22 120 90 –3 Std +3 Std 60 FREQUENCY 120 FREQUENCY .9 NF (dBm) OIP3 (dBm) 90 –3 Std +3 Std 60 30 30 0 0 14.5 15 15.5 16 16.5 Gain (dB) Figure 4. Gain @ 2 GHz, 4V, 135 mA. LSL = 14 dBm, Nominal = 15.5 dBm, USL = 17 dBm. 19 20 21 22 23 24 25 26 P1dB (dBm) Figure 5. P1dB @ 2 GHz, 4V, 135 mA. Nominal = 23 dBm. Notes: 1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3 Gamma Load and Source at Optimum OIP3 Tuning Conditions The device’s optimum OIP3 measurements were determined using a Maury Load Pull System at 4.0V, 135 mA quiesent bias. Typical Gammas at Optimum OIP3 [1] Freq (GHz) Gamma Source Mag Ang (deg) Gamma Load Mag Ang (deg) OIP3 (dBm) Gain (dB) P1dB (dBm) PAE (%) 0.9 0.8179 -143.28 0.0721 124.08 42.0 17.2 21.7 33.8 2.0 0.7411 -112.36 0.4080 119.91 41.6 15.6 23.4 44.2 3.9 0.6875 -94.23 0.4478 174.74 41.3 11.2 23.1 41.4 5.8 0.5204 -75.91 0.3525 -120.13 36.9 5.6 22.4 25.7 Note: 1. Typical describes additional product performance information that is not covered by the product warranty. 400 0.9V 350 Ids (mA) 300 0.8V 250 0.7V 200 150 0.6V 100 0.5V 50 0 0 1 2 3 4 Vds (V) Figure 6. Typical IV Curve. 4 5 6 7 45 45 40 40 40 35 35 35 3V 4V 5V 25 20 75 90 105 120 135 150 165 30 3V 4V 5V 25 20 75 180 90 105 Ids (mA) 135 150 165 20 75 180 Figure 8. OIP3 vs. Ids and Vds at 2 GHz. 18 12 17 17 10 16 15 14 120 135 150 165 16 15 14 3V 4V 5V 13 GAIN (dB) 18 GAIN (dB) 14 105 13 12 75 180 90 105 120 135 150 165 3V 4V 5V 90 105 120 135 150 165 Ids (mA) Figure 13. OIP3 vs. Ids and Vds at 5.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. 5 4 3V 4V 5V 2 180 0 75 120 135 150 165 180 60 30 GAIN (dB) & Pout (dBm) OIP3 (dBm) GAIN (dB) 3V 4V 5V 90 105 Figure 12. Small Signal Gain vs. Ids and Vds at 3.9 GHz. Gain_3V Pout_3V PAE_3V 25 25 180 Ids (mA) 6 30 165 6 0 75 180 8 35 150 2 Figure 11. Small Signal Gain vs. Ids and Vds at 2 GHz. 40 135 8 Ids (mA) Figure 10. Small Signal Gain vs. Ids and Vds at 900 MHz. 120 4 3V 4V 5V Ids (mA) 20 75 105 Figure 9. OIP3 vs. Ids and Vds at 3.9 GHz. 19 90 90 Ids (mA) 19 12 75 3V 4V 5V 25 Ids (mA) Figure 7. OIP3 vs. Ids and Vds at 900 MHz. GAIN (dB) 120 30 90 105 120 135 150 165 180 Ids (mA) Figure 14. Small Signal Gain vs. Ids and Vds at 5.8 GHz. 50 20 40 15 30 10 20 5 10 0 -14 0 -10 -6 -2 2 6 10 Pin (dBm) Figure 15. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 900 MHz. PAE (%) 30 OIP3 (dBm) 45 OIP3 (dBm) OIP3 (dBm) ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. 15 30 10 20 5 2 6 10 20 10 5 0 0 -14 PAE (%) 30 10 -10 -6 Pin (dBm) Gain_4V Pout_4V PAE_4V 15 30 10 20 5 2 6 10 6 10 PAE (%) 60 30 Gain_3V Pout_3V PAE_3V 25 20 40 15 30 10 20 5 10 14 20 10 5 10 0 0 -10 14 0 -6 -2 60 Gain_5V Pout_5V PAE_5V 30 10 20 10 5 0 0 -10 Pin (dBm) Note: Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive. PAE (%) 15 2 6 10 14 18 10 14 30 30 50 40 -2 6 Pin (dBm) 30 -6 2 Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 3.9 GHz. Figure 20. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 2 GHz. 20 18 50 10 0 -10 25 14 30 0 2 10 15 5 -2 6 40 10 -6 2 20 20 GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) -2 Figure 18. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 2 GHz. 50 10 Figure 22. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 3.9 GHz. 6 0 -6 Pin (dBm) 30 50 6 0 -10 15 60 2 0 10 Pin (dBm) Gain_4V Pout_4V PAE_4V -2 10 40 14 30 -6 5 60 Pin (dBm) 0 -10 10 20 Figure 19. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 2 GHz. 25 20 Gain_5V Pout_5V PAE_5V 25 GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 40 -2 10 30 50 20 -6 6 30 Figure 17. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 900 MHz. 60 30 0 -10 2 15 Pin (dBm) Figure 16. Small Signal Gain/Pout/PAE vs. Pin at Vds=4V and Freq = 900 MHz. 25 -2 40 PAE (%) -2 15 50 20 GAIN (dB) & Pout (dBm) -6 40 Gain_3V Pout_3V PAE_3V 25 25 20 20 15 15 10 10 10 5 5 0 0 18 Pin (dBm) Figure 21. Small Signal Gain/Pout/PAE vs. Pin at Vds=5V and Freq = 3.9 GHz. PAE (%) -10 20 25 GAIN (dB) & Pout (dBm) 0 -14 50 Gain_3V Pout_3V PAE_3V PAE (%) 40 25 60 30 PAE (%) 20 Gain_5V Pout_5V PAE_5V 0 -6 -2 2 6 10 14 18 22 Pin (dBm) Figure 24. Small Signal Gain/Pout/PAE vs. Pin at Vds=3V and Freq = 5.8 GHz. PAE (%) 50 GAIN (dB) & Pout (dBm) GAIN (dB) & Pout (dBm) 25 60 30 PAE (%) 60 Gain_4V Pout_4V PAE_4V GAIN (dB) & Pout (dBm) 30 ATF-53189 Typical Performance Curves (at 25°C unless specified otherwise), continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA. Gain_3V Pout_3V PAE_3V 25 20 20 15 15 10 10 5 0 -6 -2 2 6 10 14 18 Gain_5V Pout_5V PAE_5V 25 GAIN (dB) & Pout (dBm) 25 20 20 15 15 10 10 5 5 5 0 0 PAE (%) GAIN (dB) & Pout (dBm) 25 30 30 22 PAE (%) 30 30 0 -6 -2 2 6 Pin (dBm) 10 14 18 22 Pin (dBm) Figure 25. Small Signal Gain/Pout/PAE vs. Pin at Vds = 4V and Freq = 5.8 GHz. Figure 26. Small Signal Gain/Pout/PAE vs. Pin at Vds = 5V and Freq = 5.8 GHz. ATF-53189 Typical Performance Curves, continued Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA, Over Temperature and Frequency 18 46 16 44 14 GAIN (dB) OIP3 (dBm) 42 40 38 -40°C 25°C 80°C 36 34 0.5 1.5 2.5 12 10 10 -40°C 25°C 80°C 8 6 3.5 4.5 5.5 4 0.5 6.5 1.5 2.5 3.5 4.5 5.5 6.5 FREQUENCY (GHz) FREQUENCY (GHz) Figure 28. Gain vs. Temperature and Frequency at optimum OIP3. Figure 27. OIP3 vs. Temperature and Frequency at optimum OIP3. 50 25 45 24 P1dB (dBm) PAE (%) 40 35 30 -40°C 25°C 80°C 25 20 0.5 1.5 2.5 22 -40°C 25°C 80°C 21 3.5 4.5 5.5 FREQUENCY (GHz) Figure 29. PAE vs. Temperature and Frequency at optimum OIP3. 7 23 6.5 20 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) Figure 30. P1dB vs. Temperature and Frequency at optimum OIP3. 6.5 ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 180 mA Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 S11 Mag. 0.776 0.798 0.818 0.832 0.835 0.840 0.842 0.843 0.844 0.847 0.847 0.847 0.843 0.841 0.851 0.862 0.882 0.903 0.939 0.956 0.940 0.948 0.942 0.920 0.959 0.952 0.943 0.956 0.959 0.918 Fmin dB 0.65 0.76 0.79 0.86 0.94 1.00 1.10 1.17 1.23 1.41 1.53 1.56 1.72 1.87 2.03 2.18 Ang. -48.1 -84.7 -110.2 -128.2 -151.9 -160.3 -166.9 -172.2 -176.9 178.8 161.9 147.6 133.8 119.8 110.0 100.1 80.4 60.7 44.0 31.8 23.2 13.6 2.6 -4.3 -15.4 -20.1 -21.0 -24.2 -31.9 -43.5 (dB) 32.22 30.66 28.96 27.34 24.82 23.41 22.20 21.13 20.19 19.33 16.01 13.66 11.88 10.55 9.64 8.63 6.17 2.71 0.23 -2.09 -4.64 -6.76 -8.68 -10.31 -12.25 -14.29 -15.49 -16.19 -15.97 -15.70 Gamma Opt Mag Ang 0.394 163.6 0.417 172.4 0.423 175.3 0.465 -165.4 0.509 -147.7 0.545 -134.6 0.600 -116.7 0.645 -103.3 0.681 -93.4 0.777 -70.0 0.840 -56.1 0.855 -52.9 0.920 -39.0 0.970 -27.5 0.993 -19.1 0.997 -7.5 S21 Mag. 40.839 34.138 28.059 23.278 17.424 14.811 12.876 11.394 10.225 9.256 6.316 4.818 3.928 3.369 3.036 2.702 2.034 1.367 1.027 0.786 0.586 0.459 0.368 0.305 0.244 0.193 0.168 0.155 0.159 0.164 Rn/50 0.50 0.60 0.70 0.90 1.00 1.00 1.10 1.10 1.20 1.20 1.20 1.30 1.30 1.40 1.50 1.60 Ang. 154.1 135.6 121.7 111.2 100.1 94.8 90.2 86.3 82.7 79.3 64.7 51.4 38.4 25.2 14.5 3.7 -17.9 -39.4 -59.4 -77.8 -94.2 -110.0 -126.9 -141.2 -161.1 -171.7 179.4 169.6 155.5 137.8 (dB) -38.42 -33.98 -32.04 -31.37 -31.70 -31.70 -31.37 -31.37 -31.06 -31.06 -30.17 -29.37 -28.64 -27.90 -27.64 -27.38 -26.89 -26.42 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -35.39 -35.39 -35.92 -33.98 -31.37 -28.40 S12 Mag. 0.012 0.020 0.025 0.027 0.026 0.026 0.027 0.027 0.028 0.028 0.031 0.034 0.037 0.040 0.042 0.043 0.045 0.048 0.044 0.041 0.035 0.029 0.020 0.012 0.017 0.017 0.016 0.020 0.027 0.038 Ga dB 25.82 21.83 21.71 18.70 17.63 16.45 14.90 13.53 12.79 11.35 10.31 10.38 9.79 7.91 6.11 4.56 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 8 Ang. 65.5 50.5 39.4 31.7 23.3 20.5 18.6 17.5 16.5 15.7 13.4 11.0 7.6 2.5 -2.4 -7.3 -17.2 -27.0 -37.6 -48.7 -61.5 -79.0 -117.0 -172.6 104.4 73.2 82.9 81.5 87.0 78.1 MSG/MAG dB 35.32 32.32 30.50 29.36 28.26 27.56 26.78 26.25 25.63 25.19 23.09 21.51 20.26 17.00 16.30 15.51 13.54 10.76 10.47 9.96 6.72 6.06 4.78 2.35 3.68 0.77 -0.29 0.29 1.55 -2.03 S22 Ang. -39.3 -71.3 -94.8 -111.6 -146.6 -153.7 -159.0 -163.3 -166.8 -169.8 178.4 169.3 160.5 152.5 143.8 135.2 117.8 100.5 87.1 72.6 57.9 45.5 35.1 24.8 15.1 7.6 1.3 -2.9 -7.8 -14.7 Mag. 0.428 0.411 0.396 0.384 0.397 0.401 0.403 0.402 0.400 0.398 0.389 0.377 0.367 0.365 0.385 0.405 0.446 0.486 0.544 0.607 0.669 0.721 0.756 0.784 0.794 0.812 0.847 0.852 0.865 0.847 40 MSG 30 MSG/MAG & |S21|2 (dB) Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 31. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/180 mA. ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.916 0.897 0.885 0.878 0.859 0.857 0.855 0.854 0.852 0.854 0.851 0.850 0.846 0.844 0.854 0.863 0.883 0.902 0.939 0.956 0.940 0.948 0.942 0.920 0.959 0.951 0.942 0.956 0.958 0.920 S11 Ang. -47.6 -83.9 -109.5 -127.5 -151.3 -159.9 -166.5 -171.9 -176.6 179.1 162.1 147.7 133.9 119.8 110.0 100.2 80.5 60.8 44.1 31.8 23.2 13.6 2.6 -4.2 -15.4 -20.0 -21.1 -24.2 -31.8 -43.5 (dB) 32.62 30.90 29.07 27.36 24.75 23.31 22.08 21.00 20.06 19.18 15.84 13.49 11.71 10.37 9.45 8.42 5.90 2.33 0.04 -2.28 -4.84 -6.97 -8.87 -10.54 -12.43 -14.52 -15.70 -16.54 -16.19 -15.86 S21 Mag. 42.775 35.086 28.400 23.322 17.286 14.647 12.703 11.225 10.065 9.101 6.197 4.726 3.851 3.301 2.968 2.636 1.972 1.308 1.005 0.769 0.573 0.448 0.360 0.297 0.239 0.188 0.164 0.149 0.155 0.161 Ang. 152.6 133.4 119.5 109.2 98.2 93.1 88.7 84.9 81.5 78.2 63.9 50.7 37.7 24.6 13.9 3.1 -18.5 -40.0 -60.0 -78.3 -95.0 -110.5 -127.7 -141.8 -161.9 -172.9 178.7 167.8 154.1 136.9 (dB) -37.72 -33.15 -31.37 -30.75 -31.37 -31.06 -31.06 -30.75 -30.75 -30.75 -29.90 -29.37 -28.40 -27.91 -27.67 -27.44 -26.99 -26.56 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.029 0.032 0.034 0.038 0.040 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.020 0.012 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.7 49.5 37.8 29.9 21.3 18.6 16.9 15.6 14.6 13.9 11.3 9.0 5.7 0.8 -4.0 -8.7 -18.1 -27.6 -38.6 -49.6 -62.1 -80.0 -118.6 -173.3 105.0 74.0 84.5 82.4 87.3 78.5 MSG/MAG dB 35.17 32.03 30.22 29.05 28.06 27.19 26.57 25.88 25.40 24.97 22.87 21.43 20.06 16.96 16.21 15.36 13.28 10.33 10.33 9.82 6.56 5.89 4.64 2.11 3.53 0.44 -0.56 -0.05 1.18 -2.06 S22 Ang. -40.7 -73.3 -96.8 -113.4 -148.1 -155.0 -160.1 -164.3 -167.7 -170.6 178.0 169.0 160.4 152.4 143.7 135.0 117.6 100.2 87.3 72.8 58.1 45.6 35.2 24.8 15.1 7.7 1.4 -2.9 -7.8 -14.7 Mag. 0.458 0.430 0.407 0.390 0.399 0.401 0.402 0.400 0.398 0.396 0.386 0.374 0.364 0.362 0.382 0.401 0.441 0.480 0.542 0.605 0.668 0.721 0.757 0.784 0.794 0.812 0.847 0.853 0.866 0.848 40 Fmin dB 0.30 0.41 0.44 0.53 0.62 0.69 0.80 0.89 0.96 1.16 1.31 1.34 1.52 1.71 1.89 2.07 Gamma Opt Mag Ang 0.162 150.8 0.291 161.3 0.302 164.2 0.369 -174.2 0.433 -154.6 0.484 -140.2 0.556 -120.6 0.613 -106.1 0.656 -95.6 0.764 -71.0 0.832 -56.6 0.848 -53.4 0.914 -39.3 0.963 -27.9 0.991 -18.2 0.998 -9.2 Rn/50 0.50 0.60 0.60 0.80 1.00 1.00 1.10 1.10 1.10 1.20 1.20 1.20 1.30 1.30 1.40 1.60 Ga dB 26.27 22.12 22.02 18.95 17.05 15.87 14.63 13.21 12.94 11.19 10.26 10.04 9.64 8.68 6.57 4.51 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 9 MSG 30 MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 32. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/135 mA. ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 4.0V, IDS = 75 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.926 0.891 0.882 0.879 0.885 0.886 0.886 0.886 0.885 0.887 0.884 0.884 0.880 0.875 0.882 0.889 0.903 0.917 0.947 0.959 0.941 0.946 0.936 0.914 0.951 0.948 0.937 0.949 0.947 0.906 S11 Ang. -80.9 -121.5 -142.5 -155.4 -169.7 -175.4 -180.0 176.1 172.5 169.3 155.1 142.1 129.1 115.5 106.2 96.8 78.1 59.4 43.5 31.7 23.4 14.1 3.1 -3.7 -14.9 -19.8 -21.1 -24.5 -32.9 -45.1 (dB) 33.47 29.88 27.03 24.79 21.67 20.13 18.83 17.72 16.76 15.86 12.49 10.13 8.36 7.03 6.10 5.06 2.52 -1.09 -3.64 -6.00 -8.64 -10.69 -12.54 -14.24 -16.25 -18.34 -19.02 -19.66 -18.56 -17.79 S21 Mag. 47.170 31.192 22.457 17.360 12.120 10.145 8.743 7.695 6.883 6.209 4.212 3.210 2.618 2.246 2.018 1.791 1.337 0.882 0.658 0.501 0.370 0.292 0.236 0.194 0.154 0.121 0.112 0.104 0.118 0.129 Ang. 135.8 114.3 102.7 94.8 88.9 85.0 81.6 78.4 75.3 72.4 58.8 45.7 32.5 18.9 8.1 -2.8 -24.5 -46.2 -65.5 -83.3 -98.9 -114.3 -131.4 -146.0 -166.9 -175.3 176.1 167.9 154.7 138.1 (dB) -35.92 -33.15 -32.04 -31.70 -32.77 -32.40 -32.40 -32.04 -31.70 -31.70 -30.46 -29.12 -27.96 -27.08 -26.80 -26.54 -26.04 -25.56 -26.20 -26.74 -28.40 -29.63 -33.15 -37.72 -37.72 -39.17 -40.92 -43.10 -37.72 -33.56 S12 Mag. 0.016 0.022 0.025 0.026 0.023 0.024 0.024 0.025 0.026 0.026 0.030 0.035 0.040 0.044 0.046 0.047 0.050 0.053 0.049 0.046 0.038 0.033 0.022 0.013 0.013 0.011 0.009 0.007 0.013 0.021 Ang. 51.6 34.6 26.7 22.2 19.7 19.0 18.6 18.5 18.4 18.3 17.8 15.6 11.2 4.9 -1.1 -7.1 -19.0 -31.0 -42.2 -53.9 -65.8 -82.9 -116.4 -159.1 104.3 56.9 79.5 74.4 117.9 111.8 MSG/MAG dB 34.70 31.52 29.53 28.25 27.22 26.26 25.61 24.88 24.23 23.78 21.47 19.17 16.16 14.43 13.76 12.99 11.06 8.23 7.89 7.19 4.00 3.26 1.71 -0.74 -0.35 -2.88 -3.46 -3.21 -1.56 -4.11 S22 Ang. -96.0 -131.4 -147.6 -157.0 -172.5 -176.0 -178.8 178.7 176.5 174.4 165.1 156.3 147.4 139.0 130.5 122.0 105.1 88.1 75.1 61.6 48.2 36.9 27.2 17.2 8.0 1.2 -4.2 -8.2 -13.1 -21.1 Mag. 0.389 0.447 0.471 0.482 0.551 0.555 0.557 0.557 0.555 0.554 0.548 0.538 0.532 0.532 0.549 0.567 0.603 0.638 0.681 0.725 0.770 0.805 0.826 0.843 0.843 0.850 0.877 0.878 0.887 0.862 40 Fmin dB 0.32 0.41 0.43 0.49 0.56 0.61 0.69 0.75 0.81 0.95 1.05 1.08 1.21 1.34 1.47 1.60 Gamma Opt Mag Ang 0.175 127.6 0.224 143.8 0.235 148.3 0.306 173.6 0.375 -163.6 0.428 -147.2 0.507 -125.3 0.569 -109.3 0.617 -97.9 0.738 -72.0 0.814 -57.4 0.831 -54.2 0.907 -40.5 0.961 -29.3 0.992 -19.3 0.996 -8.9 Rn/50 0.50 0.60 0.60 0.70 0.90 1.00 1.10 1.10 1.10 1.10 1.20 1.20 1.20 1.20 1.30 1.40 Ga dB 26.45 21.98 21.50 18.55 16.33 15.18 13.86 12.68 11.58 10.81 10.64 9.97 9.25 7.78 6.96 4.46 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 MSG 30 MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 20 MAG 10 0 S21 -10 -20 -30 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 33. MSG/MAG & |S21|2 vs. and Frequency at 4.0V/75 mA. ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 5.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 S11 Mag. 0.903 0.889 0.879 0.874 0.857 0.856 0.854 0.853 0.852 0.854 0.852 0.851 0.846 0.844 0.854 0.864 0.883 0.903 0.939 0.957 0.941 0.948 0.941 0.919 0.958 0.951 0.942 0.956 0.957 0.917 Ang. -47.8 -84.2 -109.8 -127.8 -151.5 -160.0 -166.6 -172.0 -176.7 179.1 162.0 147.6 133.8 119.8 110.0 100.1 80.3 60.6 44.0 31.7 23.0 13.6 2.5 -4.4 -15.5 -20.1 -21.1 -24.2 -31.9 -43.6 (dB) 32.47 30.76 28.93 27.22 24.64 23.20 21.97 20.89 19.94 19.07 15.73 13.37 11.59 10.26 9.35 8.34 5.87 2.40 -0.10 -2.43 -5.01 -7.11 -9.04 -10.75 -12.73 -14.75 -15.92 -16.65 -16.54 -16.14 S21 Mag. 42.048 34.523 27.960 22.970 17.060 14.454 12.541 11.079 9.935 8.984 6.117 4.662 3.798 3.257 2.934 2.611 1.965 1.319 0.989 0.756 0.562 0.441 0.353 0.290 0.231 0.183 0.160 0.147 0.149 0.156 Ang. 152.7 133.5 119.5 109.2 98.2 93.1 88.7 84.9 81.4 78.1 63.7 50.4 37.4 24.2 13.4 2.5 -19.1 -40.8 -60.9 -79.4 -96.1 -112.0 -129.2 -143.9 -163.8 -174.6 175.9 166.0 152.8 134.6 (dB) -37.72 -33.15 -31.37 -30.75 -31.37 -31.06 -31.06 -30.75 -30.75 -30.46 -29.90 -29.37 -28.64 -27.91 -27.68 -27.45 -27.01 -26.60 -27.13 -27.74 -29.12 -30.75 -33.98 -38.42 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.029 0.027 0.028 0.028 0.029 0.029 0.030 0.032 0.034 0.037 0.040 0.041 0.042 0.045 0.047 0.044 0.041 0.035 0.029 0.020 0.012 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.6 49.3 37.6 29.8 21.2 18.5 16.7 15.4 14.3 13.6 11.0 8.7 5.3 0.6 -4.1 -8.8 -18.3 -27.7 -37.9 -49.0 -61.5 -79.3 -117.6 -172.8 105.3 74.4 84.0 81.8 87.0 77.6 MSG/MAG dB 35.10 31.96 30.15 28.99 28.01 27.13 26.51 25.82 25.35 24.76 22.81 21.37 20.11 16.85 16.14 15.32 13.31 10.48 10.20 9.82 6.47 5.78 4.40 1.86 3.10 0.23 -0.76 -0.15 0.72 -2.48 S22 Ang. -39.6 -71.6 -94.7 -111.3 -146.6 -153.7 -158.9 -163.2 -166.6 -169.5 179.1 170.2 161.7 153.9 145.2 136.6 119.2 101.9 88.4 73.8 58.9 46.2 35.7 25.2 15.4 7.9 1.6 -2.7 -7.7 -14.6 Mag. 0.466 0.432 0.404 0.385 0.388 0.389 0.390 0.388 0.386 0.383 0.373 0.361 0.352 0.350 0.371 0.392 0.433 0.475 0.536 0.601 0.666 0.720 0.757 0.785 0.796 0.814 0.849 0.855 0.868 0.851 40 Fmin dB 0.36 0.46 0.49 0.59 0.69 0.77 0.88 0.98 1.06 1.28 1.44 1.48 1.68 1.88 2.08 2.28 Gamma Opt Mag Ang 0.266 149.9 0.315 162.4 0.327 165.6 0.388 -172.7 0.448 -153.0 0.495 -138.6 0.563 -116.3 0.617 -104.9 0.659 -94.6 0.764 -70.5 0.830 -56.5 0.845 -53.4 0.912 -39.7 0.960 -28.3 0.988 -18.3 0.994 -8.5 Rn/50 0.50 0.60 0.60 0.80 1.00 1.00 1.10 1.10 1.10 1.10 1.10 1.10 1.20 1.20 1.30 1.30 Ga dB 26.51 22.79 22.09 18.92 17.04 15.87 14.50 13.11 12.48 11.19 10.10 10.08 9.39 8.78 8.05 4.74 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 MSG 30 MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 34. MSG/MAG & |S21|2 vs. and Frequency at 5.0V/135 mA. ATF-53189 Typical Scattering and Noise Parameters at 25°C, VDS = 3.0V, IDS = 135 mA Freq (GHz) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Mag. 0.925 0.904 0.889 0.882 0.861 0.859 0.856 0.855 0.853 0.855 0.851 0.851 0.845 0.843 0.853 0.862 0.882 0.901 0.938 0.955 0.938 0.946 0.940 0.920 0.958 0.952 0.943 0.955 0.958 0.918 S11 Ang. -47.5 -83.8 -109.3 -127.4 -151.3 -159.8 -166.5 -171.8 -176.7 179.1 162.1 147.6 133.8 119.8 110.0 100.1 80.4 60.7 44.1 31.8 23.1 13.6 2.6 -4.2 -15.5 -20.1 -21.2 -24.2 -31.9 -43.5 (dB) 32.64 30.92 29.08 27.37 24.72 23.28 22.05 20.97 20.02 19.15 15.82 13.47 11.70 10.37 9.46 8.45 5.98 2.52 0.05 -2.26 -4.79 -6.88 -8.78 -10.40 -12.36 -14.38 -15.55 -16.25 -15.97 -15.65 S21 Mag. 42.873 35.157 28.440 23.350 17.223 14.586 12.655 11.183 10.027 9.067 6.179 4.713 3.846 3.299 2.972 2.645 1.990 1.336 1.006 0.771 0.576 0.453 0.364 0.302 0.241 0.191 0.167 0.154 0.159 0.165 Ang. 152.7 133.4 119.5 109.2 98.3 93.2 88.9 85.2 81.7 78.4 64.3 51.2 38.4 25.4 14.8 4.1 -17.1 -38.4 -58.0 -76.0 -92.2 -107.4 -124.6 -138.3 -157.7 -167.9 -177.0 173.2 159.5 141.4 (dB) -37.72 -33.15 -31.37 -30.46 -31.06 -31.06 -30.75 -30.75 -30.46 -30.46 -29.63 -29.12 -28.18 -27.50 -27.31 -27.12 -26.76 -26.41 -27.13 -27.74 -29.37 -30.75 -33.98 -37.72 -34.89 -35.39 -35.39 -33.98 -31.37 -28.40 S12 Mag. 0.013 0.022 0.027 0.030 0.028 0.028 0.029 0.029 0.030 0.030 0.033 0.035 0.039 0.042 0.043 0.044 0.046 0.048 0.044 0.041 0.034 0.029 0.020 0.013 0.018 0.017 0.017 0.020 0.027 0.038 Ang. 66.6 49.4 37.7 29.8 21.4 18.7 17.0 15.7 14.8 14.0 11.4 8.9 5.0 -0.1 -5.1 -10.2 -20.2 -30.3 -40.8 -51.6 -64.0 -82.0 -121.6 -176.6 105.2 74.2 85.1 83.1 89.0 79.5 MSG/MAG dB 35.18 32.04 30.23 28.91 27.89 27.17 26.40 25.86 25.24 24.80 22.72 21.29 19.56 17.06 16.29 15.44 13.38 10.55 10.26 9.70 6.52 5.85 4.61 2.31 3.57 0.70 -0.34 0.15 1.48 -1.98 S22 Ang. -44.0 -78.6 -102.6 -119.1 -151.6 -158.2 -163.0 -167.1 -170.4 -173.3 175.3 166.0 157.1 148.8 140.2 131.6 114.3 97.1 84.0 70.0 55.7 43.6 33.5 23.3 13.8 6.6 0.5 -3.7 -8.5 -15.5 Mag. 0.435 0.425 0.416 0.410 0.433 0.437 0.439 0.438 0.436 0.435 0.425 0.413 0.403 0.401 0.419 0.438 0.475 0.512 0.565 0.622 0.681 0.729 0.760 0.785 0.794 0.810 0.844 0.849 0.861 0.843 40 Fmin dB 0.34 0.43 0.45 0.53 0.61 0.68 0.78 0.86 0.92 1.10 1.24 1.27 1.43 1.60 1.76 1.93 Gamma Opt Mag Ang 0.225 146.2 0.282 157.0 0.296 160.2 0.362 -177.0 0.427 -156.3 0.478 -141.3 0.551 -121.1 0.608 -106.2 0.652 -95.5 0.763 -70.8 0.832 -56.6 0.848 -53.5 0.915 -39.7 0.964 -28.4 0.991 -18.5 0.995 -8.6 Rn/50 0.50 0.60 0.60 0.80 0.90 1.00 1.10 1.10 1.10 1.10 1.10 1.10 1.20 1.20 1.30 1.50 Ga dB 26.30 22.19 22.07 19.00 17.13 15.89 14.59 13.17 12.97 11.22 10.16 9.93 9.57 8.78 7.27 3.39 Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 MSG 30 MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1.0 1.5 2.0 2.4 3.0 3.5 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0 20 MAG 10 S21 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 35. MSG/MAG & |S21|2 vs. and Frequency at 3.0V/135 mA. Device Models, PCB Layout and Stencil Device Refer to Agilent’s Web Site: www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container ATF-52189-TR1 3000 13” Reel ATF-52189-BLK 100 Anti-static bag SOT 89 Package Dimensions D A D1 C E H L #1 #2 E1 #3 B B1 e #3 #2 #1 e1 BOTTOM COMMON DIMENSIONS Millimeters SYMBOL A B B1 C D D1 E E1 e e1 H L MIN. 1.40 0.44 0.36 0.35 4.40 1.62 2.30 2.13 1.50 BSC 3.00 BSC 3.95 0.90 NOM. 1.50 0.50 0.42 0.40 4.50 1.73 2.50 2.20 1.50 BSC 3.00 BSC 4.10 1.10 MAX. 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC 3.00 BSC 4.25 1.20 DIMENSIONS Inches MIN. 0.055 0.017 0.014 0.014 0.173 0.064 0.090 0.084 0.059 BSC 0.118 BSC 0.155 0.035 NOM. 0.059 0.0195 0.0165 0.016 0.177 0.068 0.096 0.087 0.059 BSC 0.188 BSC 0.161 0.038 MAX. 0.063 0.022 0.019 0.017 0.181 0.072 0.102 0.090 0.059 BSC 0.188 BSC 0.167 0.047 Notes: 1. Dimensioning and tolerancing per ANSI.Y14.5M-1982 2. Controlling dimension: Millimeter convertions to inches are not necessarily exact. 3. Dimension B1, 2 places. 13 Device Orientation REEL 3GX 3GX 3GX 3GX CARRIER TAPE USER FEED DIRECTION COVER TAPE Tape Dimensions φ1.50±0.10 (0.059+0.004) 8.00±0.10 (0.315±0.004) 2.00±0.05 (0.069±0.004) 4.00±0.10 (0.157±0.004) 1.75±0.10 (0.069±0.004) + 5.50±0.05 (0.217±0.002) 12.0±0.30-0.10 (0.472+0.012-0.004) + φ1.50±0.25 (0.059+0.010) 0.292±0.013 (0.0115±0.0005) 1.91±0.10 (0.075±0.004) 5° MAX 8° 4.60±0.10 (0.181±0.004) Dimensions in mm (inches) www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright © 2005 Agilent Technologies, Inc. January 14, 2005 5989-2075EN 4.78±0.10 (0.188±0.004)