UTC BCP69-16-AA3-B-R Npn general purpose amplifier Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BC817
NPN EPITAXIAL SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
3
Description
The UTC BC817 is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.2A.
1
2
SOT-23
*Pb-free plating product number:BC817L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
EMITTER
2
BASE
3
COLLECTOR
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
BC817-16-AE3-R
BC817L-16-AE3-R
BC817-25-AE3-R
BC817L-25-AE3-R
BC817-40-AE3-R
BC817L-40-AE3-R
Package
Packing
SOT-23
SOT-23
SOT-23
Tape & Reel
Tape & Reel
Tape & Reel
MARKING
BC817-16
BC817-25
BC817-40
6A
6B
6C
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Copyright © 2005 Unisonic Technologies Co., LTD
1
QW-R206-025.B
BC817
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCES
50
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current -Continuous
IC
1.5
A
350
mW
Power Dissipation
PD
2.8
mW/°C
Derate above 25°C
℃
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~+70℃ operating temperature range
and assured by design from –20℃~+85℃.
THERMAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
SYMBOL
θJA
RATING (Note)
350
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
SYMBOL
V(BR)CEO
V(BR)CES
V(BR)EBO
Collector-Cutoff Current
ICBO
TEST CONDITIONS
IC=10mA, IB=0
IC=100µA,IE=0
IE=10µA, Ic=0
VCB=20V
VCB=20V,Ta=150°C
MIN TYP MAX UNIT
45
50
5
100
5
V
V
V
nA
µA
ON CHARACTERISTICS
hFE1*
hFE2
VCE(SAT)
VBE(ON)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Ic=100mA,VCE=1.0V
Ic=500mA, VCE=1.0V
Ic=500mA,IB=50Ma
Ic=500mA, VCE=1.0V
See Classification
40
0.7
1.2
V
V
CLASSIFICATION OF hFE1*
RANK
RANGE
BC817-16
100-250
UNISONIC TECHNOLOGIES CO., LTD
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BC817-25
160-400
BC817-40
250-600
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BC817
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs Collector Current
Collector-Emitter Voltage, VCESAT (V)
Typical Pulsed Current Gain, hFE
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V
400
125℃
300
25℃
200
100
-40℃
0
0.001
0.01
0.1
1 2
0.6
ß = 10
0.5
0.4
125℃
0.3
25℃
0.2
0.1
-40℃
0
0.01
0.1
Collector Current, IC (A)
Base-Emitter On Voltage vs Collector Current
-40℃
0.8
25℃
125℃
0.4
0.2
10
100
1000
Collector Current, IC (mA)
Collector Current , ICBO(nA)
Collector-Cutoff Current vs Ambient Temperature
100
VCB = 40V
10
1
0.1
25
50
75
100
125
150
Ambient Temperature, TA (℃)
UNISONIC TECHNOLOGIES CO., LTD
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Base-Emitter On Voltage, VBE(ON) (V)
1
1
-40℃
0.8
25℃
0.6
150℃
0.4
VCC = 5V
0.2
0.001
0.01
1
0.1
Collector Current, IC (A)
Collector-Base Capacitance vs Collector-Base Voltage
Collector-BasE Capacitance, Cc (pF)
Base-Emitter Voltage, VBE(SAT) (V)
1.2 ß = 10
1
3
Collector Current, IC (A)
Base-Emitter Saturation Voltage vs Collector Current
0.6
1
40
30
20
10
0
0
4
8
12 16
20
24
28
Collector-Base Voltage, VCB (V)
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BC817
NPN EPITAXIAL SILICON TRANSISTOR
500
VCE = 10V
400
300
200
100
0
1
10
100
1000
Collector Current, IC(mA)
Gain Bandwidth Product vs Collector Current
Power Dissipation, PD(mW)
Gain Bandwidth Pro Duct, hFE(MHz)
TYPICAL CHARACTERISTICS(cont.)
350
300
250
SOT-23
200
150
100
50
0
0
25
50
75
100 125 150
Temperature (℃)
Power Dissipation vs Ambient Temperature
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-025.B
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