AP4503BGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Lower Gate Charge
RDS(ON)
D1
D1
▼ Fast Switching Performance
30V
18mΩ
ID
G2
S2
▼ RoHS Compliant & Halogen-Free
SO-8
S1
8.2A
P-CH BVDSS
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-30V
RDS(ON)
29mΩ
ID
-6.6A
D2
D1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Total Power Dissipation
TSTG
TJ
-30
V
+20
V
8.2
-6.6
A
3
6.6
-5.3
A
30
-30
A
1
PD@TA=25℃
30
+20
Continuous Drain Current
Pulsed Drain Current
P-channel
3
Continuous Drain Current
IDM
Units
2
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
200907032
AP4503BGM-HF
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=8A
-
-
18
mΩ
VGS=4.5V, ID=5A
-
-
35
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=8A
-
6
9.6
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
15
-
ns
tf
Fall Time
RD=15Ω
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
370
590
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Gate Resistance
f=1.0MHz
-
1.5
-
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
2
AP4503BGM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-6A
-
-
29
mΩ
VGS=-4.5V, ID=-4A
-
-
45
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-6A
-
12
19.2
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.3
-
nC
VDS=-15V
-
10.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
32
-
ns
tf
Fall Time
RD=15Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
965
1540
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Gate Resistance
f=1.0MHz
-
6
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4503BGM-HF
N-Channel
40
40
T A =150 ℃
10V
7.0V
6.0V
5.0V
30
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 ℃
V G = 4.0 V
20
10
30
20
10
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I D =8A
V G =10V
I D = 5A
o
T A = 25 C
Normalized R DS(ON)
30
RDS(ON0 (mΩ)
10V
7.0V
6.0V
5.0V
V G =4.0V
26
22
18
1.4
1.0
30
14
-30
0.6
10
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
IS(A)
6
T j =25 o C
T j =150 o C
4
1.0
0.8
2
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4503BGM-HF
N-Channel
f=1.0MHz
600
500
8
ID=8A
V DS = 15 V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
400
C iss
300
4
200
2
C oss
C rss
100
0
0
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
100us
1ms
10ms
1
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
-30
Rthja=135 oC/W
DC
0.01
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4503BGM-HF
P-Channel
40
40
T A = 150 o C
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
30
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
10
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
30
20
10
0
0
0
1
2
3
4
5
6
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
50
I D = -4 A
I D = -6 A
V G = - 10V
T A =25 o C
Normalized R DS(ON)
RDS(ON) (mΩ)
1.4
40
30
1.2
1.0
0.8
30
-30
0.6
20
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
6
5
Normalized -VGS(th) (V)
1.2
-IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.0
0.8
0.6
1
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4503BGM-HF
P-Channel
f=1.0MHz
1600
8
1200
I D = -6A
V DS = -15V
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
800
4
400
2
C oss
C rss
0
0
0
4
8
12
16
20
1
24
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (R thja)
1
10
100us
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
30
-30
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135 oC/W
DC
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7