Digitron MCR265-2 Thyristors scrs/55 amps/50-800 volt Datasheet

DIGITRON SEMICONDUCTORS
MCR265 SERIES
THYRISTORS
SCRs/55 Amps/50-800 Volts
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(TJ=25°C unless otherwise noted)
RATING
Peak Reverse Blocking Voltage
SYMBOL
VALUE
(1)
MCR265-2
MCR265-4
MCR265-6
200
VRRM
400
MCR265-8
600
MCR265-10
800
Forward Current (TC=70°C)
(All Conduction Angles)
ITSM
Forward Peak Gate Power
Forward Average Gate Power
Volts
55
35
IT(RMS)
IT(AV)
Peak Non-repetitive Surge Current – 8.3 ms
(1/2 Cycle, Sine Wave)
UNIT
50
Amps
Amps
550
PGM
20
Watts
PG(AV)
0.5
Watt
Forward Peak Gate Current
(300μs, 120 PPS)
lGM
Operating Junction Temperature Range
TJ
-40 to +125
°C
Tstg
-40 to +150
°C
Storage Temperature Range
Amps
2.0
1. VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative voltage, however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the device is to be used at high sustained
currents.
THERMAL CHARACTERISTICS
SYMBOL
MAX
UNIT
Thermal Resistance, Junction to Case
CHARACTERISTIC
RθJC
0.9
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
CHARACTERISTIC
Peak Forward Blocking Voltage (TJ = 125°C)
MCR265-2
MCR265-4
MCR265-6
MCR265-8
MCR265-10
SYMBOL
MIN
TYP
MAX
UNIT
-
-
Volts
VDRM
50
200
400
600
800
-
-
2.0
-
-
2.0
-
1.5
1.9
-
20
40
50
90
-
1.0
1.5
0.2
-
-
Peak forward blocking current
(rated VDRM @ TJ = 125°C)
IDRM
Peak reverse blocking current
(rated VRRM @ TJ = 125°C)
IRRM
Forward “on” voltage(1)
(ITM = 110A)
VTM
Gate trigger current (continuous dc)
(Anode voltage = 12Vdc, RL = 100ohms)
(TC = -40°C)
IGT
Gate trigger voltage (continuous dc)
(Anode voltage = 12Vdc, RL = 100ohms)
VGT
Gate non-trigger voltage
(Anode voltage = rated VDRM, RL = 100ohms, TJ = 125°C)
VGD
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
mA
mA
[email protected]
www.digitroncorp.com
Rev. 20130116
Volts
mA
Volts
Volts
DIGITRON SEMICONDUCTORS
1. Pulse Width≤300μs, Duty Cycle≤2%
MCR265 SERIES
THYRISTORS
SCRs/55 Amps/50-800 Volts
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
CHARACTERISTIC
SYMBOL
Holding current
(anode voltage = 12Vdc)
IH
Turn-on time
(ITM = 55A, IGT = 200mAdc)
tgt
Critical rate of rise of off-state voltage
(gate open, rated VDRM, exponential waveform)
dv/dt
MIN
TYP
MAX
-
30
75
-
1.5
-
-
50
-
mA
µs
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-220AB
Alpha-numeric
See below
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
UNIT
[email protected]
www.digitroncorp.com
Rev. 20130116
DIGITRON SEMICONDUCTORS
MCR265 SERIES
144 Market Street
Kenilworth NJ 07033 USA
THYRISTORS
SCRs/55 Amps/50-800 Volts
phone +1.908.245-7200
fax +1.908.245-0555
[email protected]
www.digitroncorp.com
Rev. 20130116
Similar pages