DIGITRON SEMICONDUCTORS MCR265 SERIES THYRISTORS SCRs/55 Amps/50-800 Volts Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TJ=25°C unless otherwise noted) RATING Peak Reverse Blocking Voltage SYMBOL VALUE (1) MCR265-2 MCR265-4 MCR265-6 200 VRRM 400 MCR265-8 600 MCR265-10 800 Forward Current (TC=70°C) (All Conduction Angles) ITSM Forward Peak Gate Power Forward Average Gate Power Volts 55 35 IT(RMS) IT(AV) Peak Non-repetitive Surge Current – 8.3 ms (1/2 Cycle, Sine Wave) UNIT 50 Amps Amps 550 PGM 20 Watts PG(AV) 0.5 Watt Forward Peak Gate Current (300μs, 120 PPS) lGM Operating Junction Temperature Range TJ -40 to +125 °C Tstg -40 to +150 °C Storage Temperature Range Amps 2.0 1. VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative voltage, however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the device is to be used at high sustained currents. THERMAL CHARACTERISTICS SYMBOL MAX UNIT Thermal Resistance, Junction to Case CHARACTERISTIC RθJC 0.9 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) CHARACTERISTIC Peak Forward Blocking Voltage (TJ = 125°C) MCR265-2 MCR265-4 MCR265-6 MCR265-8 MCR265-10 SYMBOL MIN TYP MAX UNIT - - Volts VDRM 50 200 400 600 800 - - 2.0 - - 2.0 - 1.5 1.9 - 20 40 50 90 - 1.0 1.5 0.2 - - Peak forward blocking current (rated VDRM @ TJ = 125°C) IDRM Peak reverse blocking current (rated VRRM @ TJ = 125°C) IRRM Forward “on” voltage(1) (ITM = 110A) VTM Gate trigger current (continuous dc) (Anode voltage = 12Vdc, RL = 100ohms) (TC = -40°C) IGT Gate trigger voltage (continuous dc) (Anode voltage = 12Vdc, RL = 100ohms) VGT Gate non-trigger voltage (Anode voltage = rated VDRM, RL = 100ohms, TJ = 125°C) VGD 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 mA mA [email protected] www.digitroncorp.com Rev. 20130116 Volts mA Volts Volts DIGITRON SEMICONDUCTORS 1. Pulse Width≤300μs, Duty Cycle≤2% MCR265 SERIES THYRISTORS SCRs/55 Amps/50-800 Volts ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) CHARACTERISTIC SYMBOL Holding current (anode voltage = 12Vdc) IH Turn-on time (ITM = 55A, IGT = 200mAdc) tgt Critical rate of rise of off-state voltage (gate open, rated VDRM, exponential waveform) dv/dt MIN TYP MAX - 30 75 - 1.5 - - 50 - mA µs V/µs MECHANICAL CHARACTERISTICS Case Marking Pin out TO-220AB Alpha-numeric See below 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 UNIT [email protected] www.digitroncorp.com Rev. 20130116 DIGITRON SEMICONDUCTORS MCR265 SERIES 144 Market Street Kenilworth NJ 07033 USA THYRISTORS SCRs/55 Amps/50-800 Volts phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130116