MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING CR02AM Dimensions in mm φ5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE φ0.7 3.9 MAX 1.3 1.25 1.25 1 3 2 • IT (AV) ........................................................................ 0.3A • VDRM .................................................... 200V/300V/400V • IGT ......................................................................... 100µA JEDEC : TO-92 APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 4 6 8 Unit VRRM Repetitive peak reverse voltage 200 300 400 V VRSM Non-repetitive peak reverse voltage 300 400 500 V VR (DC) DC reverse voltage 160 240 320 V VDRM Repetitive peak off-state voltage ✽1 200 300 400 V VD (DC) DC off-state voltage ✽1 160 240 320 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Ta=30°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM for fusing Ratings Unit 0.47 A 0.3 A 10 A 0.4 A2s 0.1 W 0.01 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.1 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 0.23 g ✽1. With Gate-to-cathode resistance RGK =1kΩ Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 0.1 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied, RGK=1kΩ — — 0.1 mA VTM On-state voltage Ta=25°C, I TM=0.6A, instantaneous value — — 1.6 V VGT Gate trigger voltage Ta=25°C, V D =6V, IT =0.1A ✽3 — — 0.8 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM, RGK=1kΩ 0.2 — — IGT Gate trigger current Tj=25°C, VD =6V, IT=0.1A ✽3 1 — IH Holding current Tj=25°C, VD=12V, RGK=1kΩ — — 3 R th (j-a) Thermal resistance Junction to ambient — — 180 100 ✽2 V µA mA °C/W ✽2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (µA) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode. ✽3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 V1 RGK 1 2 VGT 1kΩ SWITCH 60Ω TUT 6V DC SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25°C 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 VFGM = 6V 101 7 5 3 2 PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V 100 7 5 3 2 IGT = 100µA (Tj = 25°C) 10–1 7 5 3 2 VGD = 0.2V IFGM = 0.1A 100 (%) 10–2 10–2 2 3 5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT (Tj = t°C) GATE CURRENT (Tj = 25°C) 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IGT (25°C) # 1 32µA # 2 9µA #1 #2 120 100 80 60 40 See ∗3 20 1.0 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 140 160 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 100 200 23 5 7 101 23 5 7 102 23 5 7 103 180 160 140 120 100 80 60 40 20 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) AVERAGE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) 102 7 5 3 2 GATE CURRENT VS. JUNCTION TEMPERATURE 180 140 TYPICAL EXAMPLE JUNCTION TEMPERATURE (°C) 200 160 103 7 5 3 2 GATE CURRENT (mA) GATE TRIGGER VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 100 (%) GATE CHARACTERISTICS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 0.7 0.6 120° 0.5 60° 0.4 180° 90° θ = 30° 0.3 0.2 θ 0.1 360° 0 0 RESISTIVE, INDUCTIVE LOADS 0.4 0.1 0.2 0.3 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE 140 θ 120 360° 100 80 60 40 θ = 30° 60° 90° 120° 20 0 AMBIENT TEMPERATURE (°C) RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0 0.1 0.2 180° 0.4 0.3 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 0.7 0.6 90° 0.5 60° 0.4 θ = 30° 0.3 0.2 θ 0.1 360° 0 0 0.1 0.2 θ RESISTIVE LOADS 0.5 0.3 0.4 AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 140 θ 120 360° θ RESISTIVE LOADS NATURAL CONVECTION 100 80 60 40 20 0 θ = 30° 0 0.1 60° 0.2 120° 90° 180° 0.3 0.4 0.5 360° 100 RESISTIVE, INDUCTIVE LOADS θ = 30° 60° 90° 120° 180° 270° DC 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) 270° 120° 0.5 60° 0.4 θ 360° 0.2 0.1 0 90° θ = 30° 0.3 0 0.1 0.2 RESISTIVE, INDUCTIVE LOADS 0.5 0.3 0.4 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 120 180° 0.6 160 BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 NATURAL CONVECTION 140 θ DC 0.7 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (°C) 180° 120° AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AVERAGE POWER DISSIPATION (W) PLANAR PASSIVATION TYPE 120 140 TYPICAL EXAMPLE RGK = 1kΩ 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR02AM LOW POWER USE 80 60 40 20 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 80 60 #2 40 20 #1 TYPICAL EXAMPLE # 1 IGT (25°C)=10µA # 2 IGT (25°C)=66µA Tj = 125°C, RGK = 1kΩ 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Tj = 25°C IH (25°C)=1mA IGT (25°C)=25µA DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE 500 400 #1 TYPICAL EXAMPLE IGT (25°C) IH (1kΩ) # 1 13µA 1.6mA # 2 59µA 1.8mA 300 #2 200 100 Tj = 25°C 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 120 100 (%) JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) 100 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) 10–1 –60 –40 –20 0 20 40 60 80 100 120 140 REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 GATE TO CATHODE RESISTANCE (kΩ) 100 (%) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rkΩ) BREAKOVER VOLTAGE (RGK = 1kΩ) 100 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 HOLDING CURRENT (RGK = rkΩ) HOLDING CURRENT (RGK = 1kΩ) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) PLANAR PASSIVATION TYPE 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 103 7 5 4 3 2 TYPICAL EXAMPLE IGT (25°C) # 1 10µA #2 # 2 66µA #1 102 7 5 4 3 2 Tj = 25°C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999