IPB065N15N3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
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Package
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Marking
(.-C)-C
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9
6954
Parameter
Symbol Conditions
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9>E? EC 4B
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T 8 T
)+(
T 8
1+
T
Unit
6
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q*(
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T 8 T
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+ 5F Value
T
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5
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IPB065N15N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
(&-
Thermal characteristics
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CD1>3 5 :E>3 D9
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R `T@8
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CD1>3 5 :E>3 D9
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MYNUQZ`
R `T@6
=9>9
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%
%
*
+
,
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%
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Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954
Static characteristics
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. I 9
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V =H"`T#
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V 9H . V =H
T V T
.
V 9H . V =H
T V T
.
V
J
r6
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%
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IPB065N15N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
--((
/+((
%
.,(
0-(
Dynamic characteristics
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C U__
V =H . V 9H . f & " J
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D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
C ^__
%
)(
%
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t P"[Z#
%
*-
%
+ 9C5 D9
=5
t^
%
+-
%
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t P"[RR#
%
,.
%
tR
%
),
%
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Q S_
%
+(
%
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Q SP
%
))
%
%
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%
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.
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175
V \XM`QMa
%
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%
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%
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%
%
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%
%
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%
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J
%
),.
%
Z_
%
,/0
%
Z8
V 99 . V =H
.
J
Reverse Diode
9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB
5>D
9? 45 @E<C5 3 EBB
5>D
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9? 45 6? BG1B4 F? <D175
V H9
+ 5F5BC5 B53 ? F5BI D9
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t ^^
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75
Q ^^
,#
+ 5F IH
T 8 T
V =H . I <
T V T
V G . I < Pi <'Pt VC
, 55 69
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5B4569>9D9
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@175 IPB065N15N3 G
1 Power dissipation
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H"
320
.
140
280
120
240
100
80
I D [A]
P tot [W]
200
160
60
120
40
80
20
40
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `T@84R"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
100
VC
VC
VC
=C
(&-
Z thJC [K/W]
I D [A]
102
=C
10
1
98
10
-1
(&*
(&)
(&(-
100
(&(*
(&()
C9>7<5 @E<C5
10-1
10-1
10-2
100
101
102
103
V DS [V]
+ 5F 10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 IPB065N15N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
.
350
15
.
.
.
300
.
.
.
250
R DS(on) [m ]
10
I D [A]
200
.
150
.
.
5
.
100
50
.
.
.
0
0
0
1
2
3
4
5
0
50
V DS [V]
100
150
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
200
160
140
150
120
g fs [S]
I D [A]
100
100
80
60
50
40
T
T
20
0
0
0
2
4
6
8
+ 5F 0
40
80
120
160
I D [A]
V GS [V]
@175 IPB065N15N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9
V =H"`T#4R"T V V =H4V 9H
V =H
.
@1B1=5D5B
I9
20
4
3.5
15
V
2.5
V GS(th) [V]
R DS(on) [m ]
V
3
10
10!
2
1.5
`e\
5
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
T j [°C]
11 Typ. capacitances
C 4R"V 9H V =H
. f 60
100
140
180
T j [°C]
12 Forward characteristics of reverse diode
& " J
I <4R"V H9#
@1B1=5D5B
TV
104
103
8U__
103
102
T
T T I F [A]
C [pF]
8[__
102
T
101
8^__
101
100
100
0
20
40
60
80
100
V DS [V]
+ 5F 0
0.5
1
1.5
2
V SD [V]
@175 IPB065N15N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
1000
@E<C54
10
.
8
.
100
.
V GS [V]
I AS [A]
6
T
T
T
4
10
2
1
0
1
10
100
1000
0
20
15 Drain-source breakdown voltage
V 7G"9HH#4R"T V I 9
40
60
80
Q gate [nC]
t AV [µs]
16 Gate charge waveforms
=
170
V =H
Qg
165
V BR(DSS) [V]
160
155
150
V S _"`T#
145
Q S "`T#
140
Q _c
Q S_
135
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5F @175 IPB065N15N3 G
PG-TO263-7: Outline
+ 5F @175 IPB065N15N3 G
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