AP9990GIF-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 60V RDS(ON) 6mΩ ID G 55A S Top View Description The Advanced Advanced Power Power MOSFETs MOSFETs fromfrom APEC APEC provide provide the the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. TO-220CFM Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@Tc=25℃ Continuous Drain Current, V GS @ 10V 55 A ID@Tc=100℃ Continuous Drain Current, V GS @ 10V 38 A 220 A 1 IDM Pulsed Drain Current PD@Tc=25℃ Total Power Dissipation 37.5 W PD@TA=25℃ Total Power Dissipation 2.3 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 1 201008301 AP9990GIF-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=30A - - 6 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=40A - 55 - S IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=40A - 59 94 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 14 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 29.5 - nC 2 td(on) Turn-on Delay Time VDS=30V - 14 - ns tr Rise Time ID=40A - 76 - ns td(off) Turn-off Delay Time RG=1Ω - 25 - ns VGS=10V - 12 - ns tf Ciss Input Capacitance VGS=0V - 2320 3700 pF Coss Output Capacitance VDS=25V - 450 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 280 - pF Rg Gate Resistance f=1.0MHz - 1.3 - Ω Min. Typ. IS=40A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V, - 41 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 58 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9990GIF-HF 300 160 ID , Drain Current (A) 250 ID , Drain Current (A) T C =175 o C 10V 9.0V 8.0V o T C =25 C 200 7.0V 150 V G = 6.0V 100 10V 9.0V 8.0V 7.0V 120 V G =6.0V 80 40 50 0 0 0.0 4.0 8.0 12.0 16.0 20.0 24.0 0.0 4.0 V DS , Drain-to-Source Voltage (V) 8.0 12.0 16.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.4 I D =30A V G =10V Normalized RDS(ON) Normalized BVDSS (V) 2.0 1.1 1 1.6 1.2 0.9 0.8 0.4 0.8 -50 0 50 100 150 -50 200 0 Fig 3. Normalized BVDSS v.s. Junction 100 150 200 Fig 4. Normalized On-Resistance v.s. Junction Temperature Temperature 40 1.6 30 1.2 o T j =175 C Normalized VGS(th) (V) IS(A) 50 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) T j =25 o C 20 10 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9990GIF-HF f=1.0MHz 12 4000 I D =40A 3000 V DS =30V V DS =36V V DS =48V 8 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 2000 4 1000 2 C oss C rss 0 0 0 20 40 60 80 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 100 Normalized Thermal Response (Rthjc) Duty factor = 0.5 Operation in this area limited by RDS(ON) ID (A) 100us 1ms 10ms 10 100ms 1s DC 1 T C =25 o C Single Pulse 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single Pulse 0.01 t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0 0.01 0.1 1 10 100 1000 0.00001 0.0001 0.001 V DS ,Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4