ARF449A ARF449B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 150V 90W 120MHz The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz. • Specified 150 Volt, 81.36 MHz Characteristics: • Output Power = 90 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter ARF449A/449B VDSS Drain-Source Voltage 450 VDGO Drain-Gate Voltage 450 ID UNIT Volts Continuous Drain Current @ TC = 25°C 9 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 165 Watts Junction to Case 0.76 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS VDS(ON) IDSS IGSS MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 450 On State Drain Voltage 1 TYP MAX Volts (ID(ON) = 5A, VGS = 10V) 4 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 250 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 gfs Forward Transconductance (VDS = 25V, ID = 5A) 3 VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 2 5.8 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT nA mhos 5 Volts 7-2003 BVDSS Characteristic / Test Conditions 050-4909 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol ARF449A/449B Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 980 1200 VDS = 150V 87 120 f = 1 MHz 25 40 VGS = 15V 5 10 VDD = 0.5 VDSS 3.1 7 ID = ID[Cont.] @ 25°C 15 25 RG = 1.6ý 3 7 MAX VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 81.36 MHz 12 13 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 20:1 VDD = 150V Pout = 90W UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 3000 30 Class C VDD = 150V 25 CAPACITANCE (pf) GAIN (dB) 20 15 10 Ciss 1000 Pout = 150W 500 Coss 100 Crss 50 5 ID, DRAIN CURRENT (AMPERES) 050-4909 Rev C 7-2003 16 12 10 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 45 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 50 TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 8 4 TJ = +125°C TJ = -55°C TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) 0 30 OPERATION HERE LIMITED BY RDS (ON) 10µS 100µS 10 1mS 5 10mS 1 100mS .5 TC =+25°C TJ =+150°C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF449A/449B 25 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 20 VGS=8, 10 & 15V 6.5V 15 6V 10 5.5V 5 5V 4.5V 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 160 POUT, POWER OUT (WATTS) Class C VDD = 150V f = 81.36 MHz 120 80 40 0 0 0 2 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 14 Class C VDD = 150V 12 f = 81.36 MHz 10 8 6 0 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 0.8 0.2 0.1 0.1 0.05 0.05 0.02 Note: 0.01 PDM SINGLE PULSE 0.01 t1 0.005 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Table 1 - Typical Class C Large Signal Input-Output Impedance Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 Z in (Ω) 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 Z OL (Ω) 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12 Z in - gate shunted by 25Ω Z OL - conjugate of optimum load impedance for 150W at 150V 7-2003 0.001 10-5 050-4909 Rev C Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 ARF449A/449B 81.36 MHz Test Circuit Parts List C1 -- 680pF Unelco C2-C4 -- Arco 463 Mica Trimmer C5-C7 -- 1nF 500V COG chip L1 -- 0.8" #18 AWG into hairpin ~19nH L2-L3 -- 3t #18 AWG .25" ID ~50nH L4 -- 10t #18 AWG .25" ID ~470nH L5 -- VK200-4B ferrite choke ~3uH R1 -- 25 Ohm 1/2W Carbon T1 -- 4:1 Broadband Transformer L5 + C6 150V L4 C5 L2 L1 RF Input - C7 C3 DUT RF Output L3 C4 T1 C1 C2 R1 81.36 MHz Test Circuit TO-247 Package Outline Top View 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 7-2003 1.01 (.040) 1.40 (.055) 050-4909 Rev C Dimensions in Millimeters and (Inches) NOTE: The ARF446 and ARF447 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 2.21 (.087) 2.59 (.102) Device ARF449A ARF449B Gate Drain Source Source Drain Gate 5.45 (.215) BSC 2-Plcs. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.