NEC NP109N04PUG Mos field effect transistor switching n-channel power mos fet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP109N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP109N04PUG-E1-AY
Note
NP109N04PUG-E2-AY
Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode).
FEATURES
• Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
• High current rating ID(DC) = ±110 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±110
A
ID(pulse)
±440
A
Total Power Dissipation (TC = 25°C)
PT1
220
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
IAR
60
A
Drain Current (pulse)
Note1
Storage Temperature
Repetitive Avalanche Current
Note2
Note2
Repetitive Avalanche Energy
EAR
360
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.68
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18590EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
NP109N04PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 55 A
31
63
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 55 A
<R>
Input Capacitance
Ciss
VDS = 25 V,
<R>
Output Capacitance
Coss
VGS = 0 V,
980
1470
pF
<R>
Reverse Transfer Capacitance
Crss
f = 1 MHz
630
1140
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 55 A,
47
103
ns
Rise Time
tr
VGS = 10 V,
35
70
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
90
180
ns
Fall Time
tf
35
70
ns
Total Gate Charge
QG
VDD = 32 V,
180
270
nC
Gate to Source Charge
QGS
VGS = 10 V,
44
nC
Gate to Drain Charge
QGD
ID = 110 A
64
nC
Body Diode Forward Voltage
VF(S-D)
IF = 110 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 110 A, VGS = 0 V,
56
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
80
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
2.3
mΩ
10500 15750
1.4
pF
V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
1.7
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D18590EJ2V0DS
td(on)
ton
tf
toff
NP109N04PUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
PW
100
=1
i0
ID(DC)
0
μs
i
RDS(on) Limited
(VGS = 10 V)
s
m
d
it e
1i 0
m
Li
n
s
ow
m
d
k
1i
a
re
d
B
it e
y
m
ar
Li
nd
n
co
t io
Se
pa
si
is
D
er
DC
w
Po
i
10
1
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 0.68°C/Wi
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18590EJ2V0DS
3
NP109N04PUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
500
ID - Drain Current - A
ID - Drain Current - A
400
300
VGS = 10 V
200
100
Tch = −55°C
25°C
75°C
150°C
175°C
100
10
1
VDS = 10 V
Pulsed
Pulsed
0.1
0
0.2
0.4
0.6
0.8
0
1
1
2
5
6
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3.5
3
2.5
2
1.5
1
VDS = VGS
ID = 250 μA
0.5
0
-100
-50
0
50
100
150
100
150°C
175°C
10
Tch = −55°C
25°C
75°C
1
VDS = 10 V
Pulsed
0.1
0.1
200
1
Pulsed
3
VGS = 10 V
1
0
1
10
100
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
4
2
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - mΩ
4
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
ID - Drain Current - A
4
3
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
0
10
ID = 55 A
Pulsed
5
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D18590EJ2V0DS
20
NP109N04PUG
<R>
5
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 10 V
ID = 55 A
3
2
1
Pulsed
0
-100
-50
0
50
100
150
Ciss
10000
Coss
1000
VGS = 0 V
f = 1 MHz
100
0.01
200
SWITCHING CHARACTERISTICS
1
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
1000
tf
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
0.1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
100
td(on)
tr
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
12
VDD = 32 V
20 V
8V
35
30
9
25
20
10
3
VDS
5
ID = 110 A
0
1
10
0
100
50
100
150
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
6
VGS
15
1
0.1
0
200
100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Crss
VGS - Gate to Source Voltage - V
4
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
VGS = 10 V
0V
10
1
Pulsed
0.1
di/dt = 100 A/μs
VGS = 0 V
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D18590EJ2V0DS
0.1
1
10
100
1000
IF - Diode Forward Current - A
5
NP109N04PUG
PACKAGE DRAWING (Unit: mm)
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP)
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18590EJ2V0DS
NP109N04PUG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
109N04
UG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP109N04PUG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18590EJ2V0DS
7
NP109N04PUG
• The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1
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