INCHANGE Semiconductor isc Silicon NPN Power Transistors MJD44H11 DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A PC Collector Power Dissipation @TC=25℃ Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 20 1.75 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors MJD44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 μA hFE-1 DC Current Gain IC= 2A ; VCE= 1V 60 hFE-2 DC Current Gain IC= 4A ; VCE= 1V 40 COB Output Capacitance VCB= 10V,f= 1.0MHz 45 pF Current-Gain—Bandwidth Product IC=0.5A;VCE= 10V;ftest=20MHz 40 MHz 300 ns 500 ns 140 ns fT CONDITIONS MIN TYP 80 MAX UNIT V Switching Times; Resistive Load td+tr Delay and Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.com IC= -5A; IB1= IB2= -0.5A 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors MJD44H11 Outline Drawing isc website：www.iscsemi.com 3 isc & iscsemi is registered trademark