DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Common Source Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Small Surface Mount Package ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability Case: SOT-353 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) • • • • • • G2 G2 SOT-353 S S G1 G1 Q1 ESD PROTECTED D2 Maximum Ratings Q1, Q2 Thermal Characteristics Q1, Q2 Symbol VDSS VGSS ID Value 30 ±10 400 Unit V V mA PD RθJA 280 446 mW °C/W Tj, TSTG -55 to +150 °C @TA = 25°C unless otherwise specified Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Q1, Q2 @TA = 25°C unless otherwise specified Characteristic @ TC = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS 30 ⎯ ⎯ ⎯ V μA IGSS ⎯ ⎯ ⎯ 1 ±10 ±1 VGS(th) 0.6 |Yfs| VSD ⎯ ⎯ ⎯ 100 0.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ ton toff RDS (ON) Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: D1 Schematic Diagram @TA = 25°C unless otherwise specified Characteristic Switching Time D2 TOP VIEW Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current D1 BOTTOM VIEW TOP VIEW Q2 Turn-on Time Turn-off Time μA 1.2 V 2.2 1.5 1.2 Ω ⎯ 1.4 mS V 39 10 3.6 ⎯ ⎯ ⎯ pF pF pF ⎯ 11 ⎯ nS ⎯ 51 ⎯ nS Test Condition VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 20mA VGS = 2.5V, ID = 20mA VGS = 4.0V, ID = 100mA VDS =10V, ID = 0.1A VGS = 0V, IS = 115mA VDS = 3V, VGS = 0V f = 1.0MHz VDD = 5V, ID = 10 mA, VGS = 0-5V 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. DMN32D2LDF Document number: DS31238 Rev. 3 - 2 1 of 4 www.diodes.com January 2008 © Diodes Incorporated NEW PRODUCT DMN32D2LDF DMN32D2LDF Document number: DS31238 Rev. 3 - 2 2 of 4 www.diodes.com January 2008 © Diodes Incorporated DMN32D2LDF RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 4V ID = 100mA 1.4 VGS = 2.5V ID = 20mA VGS = 1.8V ID = 20mA 1.2 1 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C°) Fig. 7 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature 50 f = 1 MHz 40 CT, CAPACITANCE (pF) Ciss 30 20 10 Coss Crss 0 0 Ordering Information Part Number DMN32D2LDF-7 Notes: 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Capacitance 20 (Note 5) Case SOT-353 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information (Note 6) G2 S KDV D2 Notes: G1 YM NEW PRODUCT 1.8 KDV = Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September D1 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). Date Code Key Year Code Month Code 2007 U Jan 1 DMN32D2LDF Document number: DS31238 Rev. 3 - 2 2008 V Feb 2 Mar 3 2009 W Apr 4 May 5 2010 X Jun 6 3 of 4 www.diodes.com Jul 7 2011 Y Aug 8 Sep 9 2012 Z Oct O Nov N Dec D January 2008 © Diodes Incorporated DMN32D2LDF Package Outline Dimensions A NEW PRODUCT TOP VIEW B C H K M J D F L SOT-353 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 ⎯ K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0° 8° α All Dimensions in mm Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN32D2LDF Document number: DS31238 Rev. 3 - 2 4 of 4 www.diodes.com January 2008 © Diodes Incorporated