APTGT50A120T1G Phase leg Fast Trench + Field Stop IGBT® Power Module 5 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 6 CR1 7 8 3 4 Q2 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration NTC CR2 9 10 1 2 VCES = 1200V IC = 50A @ Tc = 80°C 12 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 125°C Max ratings 1200 75 50 100 ±20 277 100A @ 1150V Unit V A August, 2007 IC Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT50A120T1G – Rev 0 Symbol VCES APTGT50A120T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 1.4 1.7 2.0 5.8 5.0 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 18Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 50A Tj = 125°C RG = 18Ω Min Test Conditions Min Typ 3600 160 90 30 420 pF ns 70 90 50 520 ns 90 5 mJ 5.5 Reverse diode ratings and characteristics IRM IF 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=1200V IF = 50A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 50 1.6 1.6 170 Tj = 125°C Tj = 25°C 280 5.6 Tj = 125°C Tj = 25°C Tj = 125°C 9.9 2.2 4.1 Er Reverse Recovery Energy IF = 50A VR = 600V di/dt =1900A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C DC Forward Current VF Max 250 500 µA A 2.1 V ns August, 2007 VRRM Typ µC mJ 2–5 APTGT50A120T1G – Rev 0 Symbol Characteristic APTGT50A120T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 2500 -40 -40 -40 2.5 Max 0.45 0.72 Unit °C/W V 150 125 100 4.7 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT50A120T1G – Rev 0 August, 2007 SP1 Package outline (dimensions in mm) APTGT50A120T1G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ = 125°C TJ=25°C 80 80 VGE=17V VGE=13V 60 VGE=15V 40 40 VGE=9V 20 20 60 IC (A) IC (A) TJ=125°C 0 0 0 0.5 1 1.5 2 VCE (V) 3 0 3.5 12 TJ=25°C 80 8 E (mJ) TJ=125°C 40 3 4 6 Eon Eon Eoff Er 4 TJ=125°C 20 2 0 0 5 6 7 8 9 10 11 0 12 20 Switching Energy Losses vs Gate Resistance 12 8 60 80 100 Reverse Bias Safe Operating Area 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 10 40 IC (A) VGE (V) Eon 100 80 Eoff IC (A) E (mJ) 2 VCE (V) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 60 1 Energy losses vs Collector Current Transfert Characteristics 100 IC (A) 2.5 6 4 60 40 Er 2 VGE=15V TJ=125°C RG=18Ω 20 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 August, 2007 0.7 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4–5 APTGT50A120T1G – Rev 0 Thermal Impedance (°C/W) 0.5 APTGT50A120T1G Forward Characteristic of diode 100 VCE=600V D=50% RG=18Ω TJ=125°C TC=75°C 60 50 ZCS 40 80 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 ZVS 30 60 TJ=125°C 40 20 10 hard switching 0 10 20 TJ=125°C 20 TJ=25°C 0 30 40 50 IC (A) 60 70 0 80 0.5 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.9 0.4 0.5 0.3 0.3 0.2 0.1 Diode 0.7 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT50A120T1G – Rev 0 August, 2007 rectangular Pulse Duration (Seconds)