Sanyo ECH8674 General-purpose switching device application Datasheet

ECH8674
Ordering number : ENA1436A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
ECH8674
General-Purpose Switching Device
Applications
Features
•
•
•
•
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
Unit
--12
V
±10
V
--5
A
--30
A
1.3
W
Total Power Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (1200mm2×0.8mm)
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8674-TL-H
Top View
Packing Type : TL
0.25
0.15
8
TV
5
0 t o 0.02
LOT No.
2.3
Electrical Connection
4
1
0.9
0.65
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
2.8
TL
0.25
Marking
2.9
Bot t om View
8
7
6
5
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
60612 TKIM/40809PE MSIM TC-00001911 No. A1436-1/7
ECH8674
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS1
Conditions
IDSS2
ID=--1mA, VGS=0V
VDS=--8V, VGS=0V
VDS=--12V, VGS=0V
Cutoff Voltage
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
Forward Transfer Admittance
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
VDS=--6V, ID=--3A
ID=--3A, VGS=--4.5V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Ratings
min
typ
Unit
max
--12
V
--0.4
4.8
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
--1
μA
--10
μA
±10
μA
--1.3
8.1
V
S
31
41
mΩ
45
63
mΩ
66
95
mΩ
660
pF
210
pF
Crss
155
pF
Turn-ON Delay Time
td(on)
7.4
ns
Rise Time
tr
57
ns
Turn-OFF Delay Time
td(off)
72
ns
Fall Time
tf
69
ns
Total Gate Charge
Qg
6.9
nC
Gate-to-Source Charge
Qgs
1.2
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--5A
1.8
IS=--5A, VGS=0V
--0.83
nC
--1.2
V
Switching Time Test Circuit
0V
--4.5V
VDD= --6V
VIN
ID= --3A
RL=2Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8674
P.G
50Ω
S
Ordering Information
Device
ECH8674-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1436-2/7
ECH8674
ID -- VDS
--5
--2
--1
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
0
--1.0
120
100
ID= --0.5A
--1.5A
60
--3.0A
40
20
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
=
Ta
2
5°C
--2
75
°C
°C
25
1.0
7
5
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
5 7 --10
IT12991
25°C
--1.5A
, I D=
V
.5
2
-V GS=
.0A
I = --3
--4.5V, D
V GS=
60
40
20
--20
0
20
40
60
80
100
120
140
160
IT14503
IS -- VSD
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT12992
Ciss, Coss, Crss -- VDS
3
VDD= --6V
VGS= --4.5V
7
5
0
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
f=1MHz
2
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
= --1.
VGS
--0.01
7
5
3
2
3
0.1
--0.01
5A
= --0.
8V, I D
80
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
--2.5
IT12988
Ambient Temperature, Ta -- °C
10
7
5
--2.0
100
0
--60 --40
--8
VDS= --6V
2
--1.5
RDS(on) -- Ta
IT14502
| yfs | -- ID
3
--1.0
120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
140
--1
--0.5
Gate-to-Source Voltage, VGS -- V
Ta=25°C
0
0
IT12987
RDS(on) -- VGS
160
0
--2
--1
VGS= --1.0V
Drain-to-Source Voltage, VDS -- V
80
--3
Ta=
75°
C
25°C
--25°
C
0
--4
--25°C
Drain Current, ID -- A
--1.5V
Ta=7
5°C
V
--1
--2.5
VDS= --6V
--3.0
V
--4.5V
--3
--8.0V
Drain Current, ID -- A
--4
ID -- VGS
--6
.8 V
--5
td(off)
100
7
5
tf
3
2
tr
10
td(on)
7
Ciss
7
5
3
Coss
Crss
2
100
5
3
--0.01
1000
7
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT12993
5
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT12994
No. A1436-3/7
ECH8674
VGS -- Qg
7
5
3
2
VDS= --6V
ID= --5A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
PD -- Ta
7
IT12995
IDP= --30A
ID= --5A
--1.0
7
5
3
2
--0.1
7
5
3
2
PW≤10μs
100
μs
10
ms 1m
s
DC
10
0m
op
era
s
tio
n(
Ta
=2
5°
C)
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
--0.01
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT14504
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.5
1.4
1.3
1.2
1.0
al
t
To
di
0.8
n
t
io
ni
0.6
at
ip
1u
ss
Allowable Power Dissipation, PD -- W
1.6
6
--10
7
5
3
2
ASO
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14505
No. A1436-4/7
ECH8674
Embossed Taping Specification
ECH8674-TL-H
No. A1436-5/7
ECH8674
Outline Drawing
ECH8674-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1436-6/7
ECH8674
Note on usage : Since the ECH8674 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Any and all information described or contained herein are subject to change without notice due to
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
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mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1436-7/7
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