ECH8674 Ordering number : ENA1436A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8674 General-Purpose Switching Device Applications Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit Unit --12 V ±10 V --5 A --30 A 1.3 W Total Power Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (1200mm2×0.8mm) Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8674-TL-H Top View Packing Type : TL 0.25 0.15 8 TV 5 0 t o 0.02 LOT No. 2.3 Electrical Connection 4 1 0.9 0.65 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 TL 0.25 Marking 2.9 Bot t om View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 60612 TKIM/40809PE MSIM TC-00001911 No. A1436-1/7 ECH8674 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS1 Conditions IDSS2 ID=--1mA, VGS=0V VDS=--8V, VGS=0V VDS=--12V, VGS=0V Cutoff Voltage IGSS VGS(off) VGS=±8V, VDS=0V VDS=--6V, ID=--1mA Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 VDS=--6V, ID=--3A ID=--3A, VGS=--4.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 4.8 ID=--1.5A, VGS=--2.5V ID=--0.5A, VGS=--1.8V --1 μA --10 μA ±10 μA --1.3 8.1 V S 31 41 mΩ 45 63 mΩ 66 95 mΩ 660 pF 210 pF Crss 155 pF Turn-ON Delay Time td(on) 7.4 ns Rise Time tr 57 ns Turn-OFF Delay Time td(off) 72 ns Fall Time tf 69 ns Total Gate Charge Qg 6.9 nC Gate-to-Source Charge Qgs 1.2 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--5A 1.8 IS=--5A, VGS=0V --0.83 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --3A RL=2Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8674 P.G 50Ω S Ordering Information Device ECH8674-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1436-2/7 ECH8674 ID -- VDS --5 --2 --1 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 120 100 ID= --0.5A --1.5A 60 --3.0A 40 20 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V = Ta 2 5°C --2 75 °C °C 25 1.0 7 5 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT12991 25°C --1.5A , I D= V .5 2 -V GS= .0A I = --3 --4.5V, D V GS= 60 40 20 --20 0 20 40 60 80 100 120 140 160 IT14503 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.001 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT12992 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 7 5 0 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 2 3 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns = --1. VGS --0.01 7 5 3 2 3 0.1 --0.01 5A = --0. 8V, I D 80 --10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --2.5 IT12988 Ambient Temperature, Ta -- °C 10 7 5 --2.0 100 0 --60 --40 --8 VDS= --6V 2 --1.5 RDS(on) -- Ta IT14502 | yfs | -- ID 3 --1.0 120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 140 --1 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 0 0 IT12987 RDS(on) -- VGS 160 0 --2 --1 VGS= --1.0V Drain-to-Source Voltage, VDS -- V 80 --3 Ta= 75° C 25°C --25° C 0 --4 --25°C Drain Current, ID -- A --1.5V Ta=7 5°C V --1 --2.5 VDS= --6V --3.0 V --4.5V --3 --8.0V Drain Current, ID -- A --4 ID -- VGS --6 .8 V --5 td(off) 100 7 5 tf 3 2 tr 10 td(on) 7 Ciss 7 5 3 Coss Crss 2 100 5 3 --0.01 1000 7 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12993 5 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12994 No. A1436-3/7 ECH8674 VGS -- Qg 7 5 3 2 VDS= --6V ID= --5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 7 IT12995 IDP= --30A ID= --5A --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 100 μs 10 ms 1m s DC 10 0m op era s tio n( Ta =2 5° C) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14504 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 1.4 1.3 1.2 1.0 al t To di 0.8 n t io ni 0.6 at ip 1u ss Allowable Power Dissipation, PD -- W 1.6 6 --10 7 5 3 2 ASO 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14505 No. A1436-4/7 ECH8674 Embossed Taping Specification ECH8674-TL-H No. A1436-5/7 ECH8674 Outline Drawing ECH8674-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1436-6/7 ECH8674 Note on usage : Since the ECH8674 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1436-7/7