Silizium-Fotodiode Silicon Photodiode BPW 33 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Sperrstromarm (typ. 20 pA) • DIL-Plastikbauform mit hoher Packungsdichte • Especially suitable for applications from 350 nm to 1100 nm • Low reverse current (typ. 20 pA) • DIL plastic package with high packing density Anwendungen Applications • Belichtungsmesser • Farbanalyse • Exposure meters • Color analysis Typ Type Bestellnummer Ordering Code BPW 33 Q62702-P76 2001-02-21 1 BPW 33 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 85 °C Sperrspannung Reverse voltage VR 7 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 75 (≥ 35) nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 800 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 350 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.34 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 2.71 × 2.71 mm × mm L×W Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Dunkelstrom, VR = 1 V Dark current IR 20 (≤ 100) pA Nullpunktsteilheit, E = 0 Zero crossover S0 ≤ 2.5 pA/mV Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.59 A/W 2001-02-21 2 BPW 33 Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Quantenausbeute, λ = 850 nm Quantum yield η 0.86 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 440 (≥ 375) mV Kurzschlußstrom, Ev = 1000 Ix Short-circuit current ISC 72 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 70 µA tr, tf 1.5 µs Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 630 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.2 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 1 V, λ = 850 nm NEP 4.3 × 10– 15 Nachweisgrenze, VR = 1 V, λ = 850 nm Detection limit D* 6.3 × 1013 2001-02-21 3 W -----------Hz cm × Hz -------------------------W BPW 33 Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Relative Spectral Sensitivity Srel = f (λ) OHF00062 100 OHF01064 10 3 ΙP S rel % 80 µA 10 4 mV 10 2 10 3 VO Total Power Dissipation Ptot = f (TA) OHF00958 160 mW Ptot 140 120 VO 100 60 10 1 10 2 80 ΙP 40 60 10 0 10 1 40 20 20 0 400 600 800 10 -1 0 10 1000 nm 1200 λ 10 2 10 lx 10 4 10 3 Capacitance C = f (VR), f = 1 MHz, E = 0 OHF00073 80 0 0 20 40 60 Ee Dark Current IR = f (VR), E = 0 ΙR 10 1 0 C pA Dark Current IR = f (TA), VR = 1 V, E = 0 OHF01065 1000 80 ˚C 100 TA ΙR pF 800 OHF00075 10 4 pA 10 3 60 700 600 40 10 2 500 400 300 10 1 20 200 100 0 0 1 2 3 4 5 6 7 8 0 -2 10 V 10 10 -1 10 0 10 1 V 10 2 VR VR Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-02-21 0.8 0.6 0.4 0 20 40 60 80 4 100 120 10 0 0 20 40 60 80 ˚C 100 TA BPW 33 Maßzeichnung Package Outlines 5.4 (0.213) Chip position 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 4.3 (0.169) 3.5 (0.138) 3.0 (0.118) 0.8 (0.031) 0.6 (0.024) 3.7 (0.146) 1.2 (0.047) 0.7 (0.028) 4.9 (0.193) 4.5 (0.177) 0.6 (0.024) 0.4 (0.016) Cathode marking 4.0 (0.157) 0.6 (0.024) 1.8 (0.071) 1.4 (0.055) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 0 ... 5˚ 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 5