E-CMOS EC746N60J 600v,5.5a n-channel power mosfet Datasheet

EC746N60J
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600V,5.5A N-Channel Power MOSFET
Features
◆ 600V, 5.5A, RDS(ON)(Max.) = 2.0Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Charger
STB
Open Framed Power Supply
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Limit
TO-220 TO-220F
Unit
Drain-Source Voltage a
600
V
Gate-Source Voltage
 30
5.5
V
3.3
A
22
A
Symbol
VDS
VGS
ID
IDM
Parameter
Drain Current-Continuous, TC =25℃
Drain Current-Continuous, TC =100 ℃
Drain Current-Pulsed b
EAS
Maximum Power Dissipation @ TJ =25 ℃
Single Pulsed Avalanche Energy e
TJ, TSTG
Operating and Store Temperature Range
PD
113
A
37
W
114
mJ
-55 to 150
℃
Thermal Characteristics
Symbol
R JC
Parameter
Thermal Resistance, Junction-Case Max.
R JA
Thermal Resistance, Junction-Ambient Max.
E-CMOS Corp. (www.ecmos.com.tw)
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Value
1.1
3.4
63
Unit
℃/W
℃/W
4J06N-Rev.F001
600V,5.5A N-Channel Power MOSFET
Electrical Characteristics( TJ = 25°C unless otherwise noted)
■ Off Characteristics
Symbol
Test Condition
Parameter
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
EC746N60J
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Min. Typ. Max. Unit
e
600
V
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IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
-
-
20 μ A
IGSSF
Forward Gate Body Leakage
Current
VDS = 0V, VGS = 30V
-
-
100 nA
IGSSR
Reverse Gate Body Leakage
Current
VDS = 0V, VGS = -30V
-
-
-100 nA
VDS = VGS, ID = 250μA
2.0 2.93 4.0
1.6 2.0
■ On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 2.75A
V
Ω
2.5
10
S
-
798
-
pF
-
114
-
pF
-
25
-
pF
-
VDS = 10V, ID = 2.75A
■ Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
■ Switching Characteristics
td(on)
Turn-On Delay Time
tr
td(off)
Turn-On Rise Time
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
E-CMOS Corp. (www.ecmos.com.tw)
-
25
-
ns
VDD = 300V, ID = 5.5A
-
8.1
-
ns
RG = 10Ω,
VGS = 10V
-
38
-
ns
-
7.8
-
ns
-
19
nC
-
5.8
nC
-
8
nC
VDS = 300V, ID = 5.5A
VGS = 10V
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4J06N-Rev.F001
EC746N60J
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0.93 1.5
Vr
600V,5.5A N-Channel Power MOSFET
■ Drain-Source Diode Characteristics
IS
Drain-Source Diode Forward
Continuous Current
VGS = 0V
-
ISM
Miximum Pulsed Current
VGS = 0V
-
VSD
Drain-Source Diode
Forward Voltage
VGS = 0V, IS = 5.5A
-
trr
Reverse Recovery time
VGS = 0V, IS = 5.5A,
di/dt = 100A/μs
-
276
-
ns
Notes :
a. TJ = +25 C to +150 C.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD= 1.4A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 C.
d. Pulse width≦ 300 μs; duty cycle≦ 2%.
e. L=10mH, VDD =50V, IAS =5A, RG =25Ω Starting TJ =25 ℃.
Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration
E-CMOS Corp. (www.ecmos.com.tw)
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4J06N-Rev.F001
600V,5.5A N-Channel Power MOSFET
EC746N60J
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Figure 3 Maximum Safe Operating Area
Figure 2. Normalized On-Resistance
Variation with Temperature
Figure 4. Capacitance Characteristics
Figure 5. Gate Charge Characteristics
Figure 6. On-state Characteristics
Figure 7. Body Diode Forward Voltage
Variation with Source Current
E-CMOS Corp. (www.ecmos.com.tw)
Page 4 of 5
4J06N-Rev.F001
600V,5.5A N-Channel Power MOSFET
Figure 8. Gate
Threshold Variation With
Temperature
EC746N60J
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Figure 9. Transfer Characteristics
ORDERING INFORMATION
Part Number
Package
EC746N60JAFR
TO-220F-3L
EC746N60JAR
TO-220-3L
E-CMOS Corp. (www.ecmos.com.tw)
Marking
746N60J
LLLLL
YYWW
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Marking Information
1. LLLLL:Lot No.
2. YY:Year code
3. WW:Week code
4J06N-Rev.F001
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