MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose Transistors www.onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications. 1 BASE Features 2 EMITTER • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 SC−70 (SOT−323) CASE 419 STYLE 3 1 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VCEO Collector −Base Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VCBO Emitter −Base Voltage MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 VEBO Collector Current − Continuous MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 IC Value Unit Total Device Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature xx M G G Vdc 60 −40 1 Vdc xx 6.0 −5.0 mAdc 200 −200 M G = AM for MMBT3904WT1, SMMBT3904WT = 2A for MMBT3906WT1, SMMBT3906WT1 = Date Code* = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM Vdc 40 −40 Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBT3904WT1G, SC−70/ SMMBT3904WT1G SOT−323 (Pb−Free) 3000 / Tape & Reel MMBT3906WT1G, SMMBT3906WT1G 3000 / Tape & Reel SC−70/ SOT−323 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 9 1 Publication Order Number: MMBT3904WT1/D MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 −40 − − 60 −40 − − 6.0 −5.0 − − − − 50 −50 − − 50 −50 40 70 100 60 30 60 80 100 60 30 − − 300 − − − − 300 − − − − − − 0.2 0.3 −0.25 −0.4 0.65 − −0.65 − 0.85 0.95 −0.85 −0.95 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) (IC = −1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = −10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = −10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 V(BR)CEO Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) hFE MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 − VCE(sat) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Vdc VBE(sat) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. www.onsemi.com 2 Vdc MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 300 250 − − − − 4.0 4.5 − − 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 Unit SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 fT MHz Cobo pF Cibo pF kW hie X 10− 4 hre hfe − mmhos hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1 (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1 NF dB − − 5.0 4.0 Min Max Unit 35 35 ns SWITCHING CHARACTERISTICS Characteristic Delay Time Rise Time Storage Time Fall Time Condition Symbol (VCC = 3.0 Vdc, VBE = − 0.5 Vdc) MMBT3904WT1, SMMBT3904WT1 (VCC = −3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1, SMMBT3906WT1 td (IC = 10 mAdc, IB1 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 (IC = −10 mAdc, IB1 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 tr (VCC = 3.0 Vdc, IC = 10 mAdc) MMBT3904WT1, SMMBT3904WT1 (VCC = −3.0 Vdc, IC = −10 mAdc) MMBT3906WT1, SMMBT3906WT1 ts (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = −1.0 mAdc) tf MMBT3904WT1, SMMBT3904WT1 MMBT3906WT1, SMMBT3906WT1 www.onsemi.com 3 − − − − − − − − 35 35 200 225 50 75 ns MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 t1 DUTY CYCLE = 2% +3 V +10.9 V 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit www.onsemi.com 4 CS < 4 pF* MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 IC/IB = 10 200 100 70 50 tr @ VCC = 3.0 V 30 20 40 V 10 7 5 15 V MMBT3904WT1 td @ VOB = 0 V 1.0 5.0 7.0 10 2.0 3.0 20 50 70 100 30 100 70 50 30 20 10 7 5 2.0 V 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Turn −On Time Figure 4. Rise Time 500 200 500 300 200 IC/IB = 20 t′s = ts - 1/8 tf IB1 = IB2 IC/IB = 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 100 70 50 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) VCC = 40 V IC/IB = 10 300 t r, RISE TIME (ns) TIME (ns) 300 200 IC/IB = 20 IC/IB = 10 30 20 10 7 5 2.0 3.0 5.0 7.0 10 20 50 70 100 30 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 1.0 100 70 50 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 50 70 100 30 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Storage Time Figure 6. Fall Time 200 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 MMBT3904WT1 4.0 10 20 40 MMBT3904WT1 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 7. Noise Figure Figure 8. Noise Figure www.onsemi.com 5 40 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 MMBT3904WT1 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 10 5.0 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 5.0 Figure 10. Output Admittance Figure 9. Current Gain MMBT3904WT1 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 7.0 MMBT3904WT1 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 Figure 11. Input Impedance 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 12. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = 1 V TJ = 150°C 25°C -55°C 100 MMBT3904WT1 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 13. DC Current Gain www.onsemi.com 6 1000 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3904WT1, SMMBT3904WT1 1.0 TJ = 25°C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.1 0.07 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 14. Collector Saturation Region 1.4 IC/IB = 10 IC/IB = 10 0.7 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.8 150°C 25°C 0.6 0.5 0.4 −55°C 0.3 0.2 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.1 0.2 0 0.001 0.01 0.1 0.0001 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 15. Collector Emitter Saturation Voltage vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.9 1.4 VCE = 1 V 1.2 1.0 −55°C 0.8 25°C 0.6 0.4 150°C 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 17. Base Emitter Voltage vs. Collector Current www.onsemi.com 7 1 1 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3904WT1, SMMBT3904WT1 TJ = 25°C TJ = 125°C 1.0 10 MMBT3904WT1 MMBT3904WT1 qVC FOR VCE(sat) 0 CAPACITANCE (pF) COEFFICIENT (mV/ °C) 7.0 +25°C TO +125°C 0.5 -55°C TO +25°C -0.5 -55°C TO +25°C -1.0 Cobo qVB FOR VBE(sat) -1.5 0 20 40 60 80 100 120 140 1.0 0.1 180 200 160 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) REVERSE BIAS VOLTAGE (VOLTS) Figure 18. Temperature Coefficients Figure 19. Capacitance 1000 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) Cibo 3.0 2.0 +25°C TO +125°C -2.0 5.0 100 10 20 30 40 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 1 10 100 1000 0.1 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 20. Current Gain Bandwidth Product vs. Collector Current Figure 21. Safe Operating Area www.onsemi.com 8 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% CS < 4 pF* 1N916 DUTY CYCLE = 2% t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 22. Delay and Rise Time Equivalent Test Circuit Figure 23. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 500 500 300 200 IC/IB = 10 MMBT3906WT1 MMBT3906WT1 300 200 VCC = 40 V IB1 = IB2 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 30 20 10 7 5 15 V 40 V 2.0 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 70 50 200 IC/IB = 10 30 20 10 7 5 td @ VOB = 0 V 1.0 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 24. Turn −On Time Figure 25. Fall Time TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) NF, NOISE FIGURE (dB) 4.0 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 1.0 0 0.1 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) IC = 1.0 mA 10 NF, NOISE FIGURE (dB) 5.0 IC = 0.5 mA 8.0 6.0 4.0 IC = 50 mA 2.0 IC = 100 mA MMBT3906WT1 20 40 MMBT3906WT1 0 0.1 100 0.2 0.4 1.0 2.0 4.0 10 RS, SOURCE RESISTANCE (kW) Figure 26. Figure 27. www.onsemi.com 9 20 40 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 h PARAMETERS (VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 70 MMBT3906WT1 50 30 20 10 7.0 5.0 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 Figure 28. Current Gain 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k Ω) 5.0 7.0 Figure 29. Output Admittance 20 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 30. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 31. Voltage Feedback Ratio STATIC CHARACTERISTICS 1000 hFE, DC CURRENT GAIN VCE = 1 V TJ = 150°C 25°C 100 -55°C MMBT3906WT1 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 32. DC Current Gain www.onsemi.com 10 1000 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MMBT3906WT1, SMMBT3906WT1 1.0 TJ = 25°C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.1 0.07 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 33. Collector Saturation Region 1.4 IC/IB = 10 IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.45 150°C 0.40 0.35 25°C 0.30 0.25 −55°C 0.20 0.15 0.10 0.05 0 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 34. Collector Emitter Saturation Voltage vs. Collector Current Figure 35. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.50 1.4 VCE = 1 V 1.2 1.0 −55°C 0.8 25°C 0.6 0.4 150°C 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 36. Base Emitter Voltage vs. Collector Current www.onsemi.com 11 1 1 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP MMBT3906WT1, SMMBT3906WT1 10 1.0 MMBT3906WT1 7.0 0.5 qVC FOR VCE(sat) +25°C TO +125°C CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C TJ = 125°C -55°C TO +25°C 0 -0.5 MMBT3906WT1 +25°C TO +125°C -1.0 qVS FOR VBE(sat) -55°C TO +25°C 5.0 Cobo Cibo 3.0 2.0 -1.5 -2.0 0 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 1.0 0.1 180 200 160 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 REVERSE BIAS VOLTAGE (VOLTS) Figure 37. Temperature Coefficients Figure 38. Capacitance 1000 1 VCE = 1 V TA = 25°C IC, COLLECTOR CURRENT (A) fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 0.2 0.3 100 10 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.1 1 10 100 1000 0.1 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 39. Current Gain Bandwidth Product vs. Collector Current Figure 40. Safe Operating Area www.onsemi.com 12 100 MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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