AP2314GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS(ON) 75mΩ ID 3.5A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D The SOT-23 package is universally used for all commercial-industrial applications. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V ±12 V 3 3.5 A 3 2.8 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 90 ℃/W 201220041 AP2314GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A - - 75 mΩ VGS=2.5V, ID=1.2A - - 125 mΩ VDS=VGS, ID=250uA 0.5 - 1.2 V VDS=5V, ID=3A - 7 - S Drain-Source Leakage Current (Tj=25 C) VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=3A - 4 7 nC VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=250uA Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 10 - ns tf Fall Time RD=15Ω - 3 - ns Ciss Input Capacitance VGS=0V - 230 370 pF Coss Output Capacitance VDS=20V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=3A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 270 ℃/W when mounted on Min. copper pad. AP2314GN 15 15 5.0V 4.5V 3.0V ID , Drain Current (A) 5.0V 4.5V o T A = 150 C ID , Drain Current (A) o T A =25 C 10 2.5V 5 10 3.0 V 2.5V 5 V G = 1 .5V V G = 1. 5V 0 0 0 1 2 0 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 2 3 Fig 2. Typical Output Characteristics 100 1.6 I D =1.2A I D = 3.5 A V G =4.5V 1.4 o Normalized R DS(ON) T A =25 C RDS(ON) (mΩ ) 1 V DS , Drain-to-Source Voltage (V) 80 60 1.2 1.0 0.8 0.6 40 2 4 6 8 -50 10 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 0.8 Normalized VGS(th) (V) 3 2 IS(A) o o T j =150 C T j =25 C 1 0 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP2314GN f=1.0MHz 1000 I D =3A 10 C iss V DS =10V V DS =12V V DS =16V 8 6 C (pF) VGS , Gate to Source Voltage (V) 12 100 C oss 4 C rss 2 0 10 0 2 4 6 8 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 10 ID (A) 1ms 1 10ms 0.1 100ms 1s T A =25 o C Single Pulse DC 0.01 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ /W 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 VG ID , Drain Current (A) V DS =5V T j =25 o C 10 QG T j =150 o C 4.5V QGS QGD 5 Charge 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit Q