HP AMMC-5618 6 - 20 ghz amplifier Datasheet

Agilent AMMC-5618
6 - 20 GHz Amplifier
Data Sheet
Chip Size:
920 x 920 µm (36.2 x 36.2 mils)
Chip Size Tolerance:± 10µm (± 0.4 mils)
Chip Thickness:
100 ± 10µm (4 ± 0.4 mils)
Pad Dimensions:
80 x 80 µm (3.1 x 3.1 mils or larger)
Description
Agilent’s AMMC- 5618 6−20 GHz
MMIC is an efficient two- stage
amplifier designed to be used as
a cascadable intermediate gain
block for EW applications. In
communication systems, it can
be used as a LO buffer, or as a
transmit driver amplifier. It is
fabricated using a PHEMT
integrated circuit structure that
provides exceptional efficiency
and flat gain performance.
During typical operation with a
single 5- V supply, each gain
stage is biased for Class- A
operation for optimal power
output with minimal distortion.
The RF input and output have
matching circuitry for use in
50- Ω environments. The
backside of the chip is both RF
and DC ground. This helps
simplify the assembly process
and reduces assembly related
performance variations and
costs. The MMIC is a cost
effective alternative to hybrid
(discrete FET) amplifiers that
require complex tuning and
assembly processes.
Features
Applications
• Frequency Range: 6 − 20 GHz
• Driver/Buffer in microwave
communication systems
• High Gain: 14.5 dB Typical
• Output Power: 19.5 dBm Typical
• Input and Output Return Loss: < -12
dB
• Flat Gain Response: ± 0.3 dB Typical
• Cascadable gain stage for EW
systems
• Phased array radar and transmit
amplifiers
• Single Supply Bias: 5 V @ 107 mA
AMMC-5618 Absolute Maximum Ratings [1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VD1,VD2
Drain Supply Voltage
V
VG1
Optional Gate Voltage
V
-5
+1
VG2
Optional Gate Voltage
V
-5
+1
ID1
Drain Supply Current
mA
70
ID2
Drain Supply Current
mA
84
Pin
RF Input Power
dBm
20
Tch
Channel Temp.
°C
+150
Tb
Operating Backside Temp.
°C
-55
Tstg
Storage Temp.
°C
-65
Tmax
Maximum Assembly Temp. (60 sec max) °C
7
+165
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
AMMC-5618 DC Specifications / Physical Properties [1]
Symbol
Parameters and Test Conditions
Unit
Min.
Typical
Max.
VD1,VD2
Recommended Drain Supply Voltage
V
3
5
7
ID1
First stage Drain Supply Current
(V D1= 5V, VG1 = Open or Ground)
mA
48
ID2
Second stage Drain Supply Current
(V D2= 5V, VG2 = Open or Ground)
mA
59
ID1 + ID2
Total Drain Supply Current
(VG1 = VG2 = Open or Ground, VD1= VD2 = 5 V)
mA
107
θ ch-b
Thermal Resistance [2]
(Backside temperature (Tb) = 25°C
°C/W
22
140
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted
2. Channel-to-backside Thermal Resistance (θch-b) = 32°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy.
Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.
AMMC-5618 RF Specifications [3]
(Tb = 25°C, VDD= 5 V, IDD = 107 mA, Z0 = 50 Ω.)
Symbol
Parameters and Test Conditions
Unit
Min.
Typical
|S21|2
Small-signal Gain
dB
12.5
14.5
∆|S21|2
Small-signal Gain Flatness
dB
RLin
Input Return Loss
dB
9
12
RLout
Output Return Loss
dB
9
12
|S12|2
Isolation
dB
-40
-45
P-1dB
Output Power at 1dB Gain Compression @ 20 GHz
dBm
17.5
19.5
Psat
Saturated Output Power (3dB Gain Compression) @ 20 GHz
dBm
19
20.5
OIP3
Output 3rd Order Intercept Point @ 20 GHz
dBm
26
∆S21 / ∆T
Temperature Coefficient of Gain [2]
dB/°C
-0.023
NF
Noise Figure @ 20 GHz
dB
4.4
Notes:
3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted.
4. Temperature Coefficient of Gain based on sample test
2
Max.
± 0.3
6.5
AMMC-5618 Typical Performance (Tchuck=25°C, VDD=5V, IDD = 107 mA, Zo=50Ω)
18
0
15
-10
9
6
-20
INPUT RL (dB)
ISOLATION (dB)
-5
12
GAIN (dB)
0
-30
-40
-10
-15
-50
-20
3
-60
0
4
7
10
13
16
19
-70
22
-25
4
7
FREQUENCY (GHz)
13
16
19
22
4
7
FREQUENCY (GHz)
Figure 1. Gain
19
22
19
22
20
P1dB (dBm)
-10
NF (dB)
16
24
8
-15
13
Figure 3. Input Return Loss
10
-5
10
FREQUENCY (GHz)
Figure 2. Isolation
0
OUTPUT RL (dB)
10
6
4
-20
16
12
8
2
-25
-30
4
7
10
13
16
19
0
22
4
0
4
7
FREQUENCY (GHz)
10
13
16
19
22
4
7
FREQUENCY (GHz)
Figure 4. Output Return Loss
10
13
16
FREQUENCY (GHz)
Figure 5. Noise Figure
Figure 6. Output Power at 1 dB Gain Compression
AMMC-5618 Typical Performance vs. Supply Voltage (Tb=25°C, Zo=50Ω)
0
15
-10
GAIN (dB)
12
9
Vdd=4V
Vdd=5V
Vdd=6V
6
3
0
Vdd=4V
Vdd=5V
Vdd=6V
-5
-20
INPUT RL (dB)
ISOLATION (dB)
18
-30
4
7
10
13
16
FREQUENCY (GHz)
Figure 7. Gain and Voltage
19
22
-15
-40
-20
-50
-25
-60
0
-10
Vdd=4V
Vdd=5V
Vdd=6V
-30
4
7
10
13
16
FREQUENCY (GHz)
Figure 8. Isolation and Voltage
19
22
4
7
10
13
16
19
22
FREQUENCY (GHz)
Figure 9. Input Return Loss and Voltage
3
AMMC-5618 Typical Performance vs. Supply Voltage (cont.) (Tb=25°C, Zo=50Ω)
0
25
Vdd=4V
Vdd=5V
Vdd=6V
20
-10
P1dB (dBm)
OUTPUT RL (dB)
-5
-15
-20
15
10
Vdd=4V
Vdd=5V
Vdd=6V
-25
5
-30
-35
4
7
10
13
16
19
0
22
4
7
FREQUENCY (GHz)
10
13
16
19
22
FREQUENCY (GHz)
Figure 10. Output Return Loss and Voltage
Figure 11. Output Power and Voltage
AMMC-5618 Typical Performance vs. Temperature (VDD=5V, Zo=50Ω)
25
0
-10
15
10
Vdd=4V
Vdd=5V
Vdd=6V
5
-20
INPUT RL (dB)
ISOLATION (dB)
P1dB (dBm)
20
0
0
-40 C
25 C
85 C
-30
-40
-20
-40 C
25 C
85 C
-50
-60
4
7
10
13
16
19
22
4
7
FREQUENCY (GHz)
13
16
19
-30
22
19
22
6
5
4
3
2
-40 C
25 C
85 C
-20
1
16
19
22
FREQUENCY (GHz)
Figure 15. Output Return Loss and Temperature
15
10
-40 C
25 C
85 C
5
0
-25
13
16
25
P1dB (dBm)
NOISE FIGURE (dB)
-15
10
13
20
-10
7
10
7
-40 C
25 C
85 C
4
7
Figure 14. Input Return Loss and Temperature
8
-5
4
FREQUENCY (GHz)
Figure 13. Isolation and Temperature
0
OUTPUT RL (dB)
10
FREQUENCY (GHz)
Figure 12. Gain and Temperature
4
-10
0
4
7
10
13
16
19
FREQUENCY (GHz)
Figure 16. Noise Figure and Temperature
22
4
7
10
13
16
19
FREQUENCY (GHz)
Figure 17. Output Power and Temperature
22
AMMC-5618 Typical Scattering Parameters[1] (Tb=25°C, VDD= 5 V, IDD = 107 mA)
Freq GHz
S11
S21
S12
S22
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
dB
Mag
Phase
2.00
-2.4
0.76
-125
-52.0
0
74
-80.0
0
-134
-0.4
0.95
-77
2.50
-2.9
0.72
-147
-35.4
0.02
-119
-74.0
0
-57
-0.9
0.91
-97
3.00
-3.2
0.69
-166
-19.0
0.11
-102
-69.1
0
-65
-1.6
0.84
-118
3.50
-3.6
0.66
174
-7.4
0.43
-120
-59.1
0
-60
-2.6
0.75
-138
4.00
-4.0
0.63
152
0.8
1.09
-147
-57.7
0
-104
-3.8
0.64
-156
4.50
-4.9
0.57
126
7.7
2.43
178
-51.8
0
-113
-5.3
0.55
-173
5.00
-7.3
0.43
94
12.5
4.2
138
-48.8
0
-142
-6.9
0.45
172
5.50
-12.7
0.23
67
14.7
5.41
94
-45.7
0.01
-170
-8.6
0.37
160
6.00
-19.8
0.1
66
15.1
5.69
60
-44.5
0.01
161
-10.1
0.31
151
6.50
-23.6
0.07
85
15.1
5.69
34
-44.6
0.01
142
-11.3
0.27
141
7.00
-24.7
0.06
87
15.0
5.64
13
-44.3
0.01
127
-12.6
0.23
130
7.50
-26.4
0.05
68
15.0
5.61
-5
-44.0
0.01
115
-13.9
0.2
120
8.00
-28.2
0.04
28
14.9
5.59
-22
-43.9
0.01
103
-15.3
0.17
109
8.50
-26.3
0.05
-23
14.9
5.57
-37
-43.6
0.01
95
-16.7
0.15
98
9.00
-22.8
0.07
-55
14.9
5.55
-51
-43.3
0.01
86
-18.2
0.12
87
9.50
-19.9
0.1
-74
14.8
5.52
-65
-43.2
0.01
77
-19.7
0.1
74
10.00
-17.7
0.13
-88
14.8
5.49
-77
-43.1
0.01
70
-21.4
0.09
60
10.50
-16.1
0.16
-100
14.7
5.45
-90
-42.9
0.01
63
-22.8
0.07
43
11.00
-14.8
0.18
-110
14.7
5.43
-101
-42.8
0.01
57
-24.3
0.06
23
11.50
-13.9
0.2
-120
14.7
5.41
-113
-42.5
0.01
52
-25.1
0.06
1
12.00
-13.2
0.22
-128
14.6
5.38
-124
-42.5
0.01
45
-25.1
0.06
-22
12.50
-12.6
0.23
-136
14.6
5.37
-134
-42.3
0.01
40
-24.5
0.06
-44
13.00
-12.2
0.25
-143
14.6
5.37
-145
-42.1
0.01
34
-23.3
0.07
-60
13.50
-11.9
0.26
-151
14.6
5.38
-155
-41.9
0.01
31
-22.2
0.08
-73
14.00
-11.6
0.26
-159
14.7
5.4
-166
-41.7
0.01
24
-21.3
0.09
-85
14.50
-11.5
0.27
-166
14.7
5.42
-176
-41.6
0.01
19
-20.7
0.09
-95
15.00
-11.4
0.27
-174
14.7
5.46
174
-41.4
0.01
15
-19.8
0.1
-105
15.50
-11.4
0.27
177
14.8
5.49
163
-41.3
0.01
9
-19.1
0.11
-113
16.00
-11.5
0.27
168
14.9
5.54
153
-41.1
0.01
3
-18.4
0.12
-121
16.50
-11.7
0.26
157
14.9
5.58
142
-40.8
0.01
0
-17.7
0.13
-126
17.00
-11.9
0.25
146
15.0
5.63
131
-40.8
0.01
-7
-17.2
0.14
-132
17.50
-12.2
0.25
132
15.1
5.66
120
-40.8
0.01
-12
-16.7
0.15
-138
18.00
-12.4
0.24
116
15.1
5.71
109
-40.5
0.01
-16
-16.2
0.16
-143
18.50
-12.4
0.24
98
15.2
5.75
97
-40.4
0.01
-23
-15.8
0.16
-148
19.00
-12.2
0.25
77
15.2
5.75
85
-40.3
0.01
-29
-15.4
0.17
-154
19.50
-11.5
0.27
56
15.2
5.73
73
-40.1
0.01
-35
-14.9
0.18
-158
20.00
-10.5
0.3
34
15.0
5.65
60
-39.9
0.01
-42
-14.6
0.19
-163
20.50
-9.2
0.35
14
14.8
5.51
46
-39.9
0.01
-48
-14.0
0.2
-166
21.00
-7.9
0.4
-5
14.5
5.31
33
-40.0
0.01
-55
-13.8
0.2
-172
21.50
-6.7
0.46
-21
14.1
5.05
19
-39.8
0.01
-63
-13.5
0.21
-176
22.00
-5.7
0.52
-36
13.5
4.72
5
-40.3
0.01
-72
-13.1
0.22
179
Note:
1. Data obtained from on-wafer measurements
5
Biasing and Operation
Assembly Techniques
The AMMC- 5618 is normally
biased with a single positive
drain supply connected to both
VD1 and VD2 bond pads as
shown in Figure 19(a). The
recommended supply voltage is
3 to 5 V.
The backside of the AMMC- 5618
chip is RF ground. For
microstripline applications, the
chip should be attached directly
to the ground plane (e.g., circuit
carrier or heatsink) using
electrically conductive epoxy[1].
No ground wires are required
because all ground connections
are made with plated throughholes to the backside of the
device.
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plated metal
shim (same length and width as
the MMIC) under the chip,
which is of the correct
thickness to make the chip and
adjacent circuit coplanar.
Gate bias pads (VG1 & VG2) are
also provided to allow
adjustments in gain, RF output
power, and DC power
dissipation, if necessary. No
connection to the gate pad is
needed for single drain- bias
operation. However, for custom
applications, the DC current
flowing through the input and/
or output gain stage may be
adjusted by applying a voltage
to the gate bias pad(s) as shown
in Figure 19(b). A negative gatepad voltage will decrease the
drain current. The gate- pad
voltage is approximately zero
volt during operation with no
DC gate supply. Refer to the
Absolute Maximum Ratings
table for allowed DC and
thermal conditions.
The amount of epoxy used for
chip and or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip or
shim. The ground plane should
be free of any residue that may
jeopardize electrical or
mechanical attachment.
The location of the RF bond
pads is shown in Figure 20.
Note that all the RF input and
output ports are in a GroundSignal- Ground configuration.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to undesirable
series inductance. A single bond
wire is sufficient for signal
connections, however doublebonding with 0.7 mil gold wire
or the use of gold mesh[2] is
recommended for best
performance, especially near the
high end of the frequency range.
Thermosonic wedge bonding is
the preferred method for wire
attachment to the bond pads.
Gold mesh can be attached using
a 2 mil round tracking tool and a
tool force of approximately 22
grams with an ultrasonic power
of roughly 55 dB for a duration of
6
76 ± 8 mS. A guided wedge at an
ultrasonic power level of 64 dB
can be used for the 0.7 mil wire.
The recommended wire bond
stage temperature is 150 ± 2° C.
Caution should be taken to not
exceed the Absolute Maximum
Rating for assembly temperature
and time.
The chip is 100 µm thick and
should be handled with care. This
MMIC has exposed air bridges on
the top surface and should be
handled by the edges or with a
custom collet (do not pick up die
with vacuum on die center.)
This MMIC is also static
sensitive and ESD handling
precautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is
recommended.
2. Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
VD2
VD1
Feedback
Network
Matching
Matching
RF Output
Matching
RF Input
VG1
VG2
Figure 18. AMMC-5618 Schematic
To power supply
To power supply
100 pF chip capacitor
gold plated shim
100 pF chip capacitor
gold plated shim
RF Input
RF Output
RF Input
RF Output
Bonding island
or small
chip-capacitor
To VG1 power supply
(a)
To VG2 power supply
(b)
Figure 19. AMMC-5618 Assembly Diagram
7
0
143
Vd1
355
573
GND
Vd2
920
530
530
RF
RF
0
0
Vg1
Vg2
0 79
593
920
Figure 20. AMMC-5618 Bond pad locations (dimensions in microns)
Ordering Information:
AMMC-5618-W10 = waffle pack, 10 devices per tray
AMMC-5618-W50 = waffle pack, 50 devices per tray
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
Data subject to change.
Copyright 2003 Agilent Technologies, Inc.
February 12, 2004
5989-0532EN
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