Renesas BCR16PM-12LC 600v â 16a - triac medium power use Datasheet

Preliminary Datasheet
BCR16PM-12LC
R07DS1243EJ0300
(Previous: REJ03G1262-0200)
Rev.3.00
Dec 24, 2014
600V – 16A - Triac
Medium Power Use
Features
•
•
•
•
• The product guaranteed maximum junction
temperature 150°C.
• Insulated Type
• Planar Passivation Type
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGTIII : 50 mA
Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Motor control, heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
Page 1 of 7
BCR16PM-12LC
Preliminary
Symbol
Ratings
Unit
RMS on-state current
Parameter
IT (RMS)
16
A
Commercial frequency, sine full wave
360° conduction, Tc = 60°C
Surge on-state current
ITSM
96
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
38
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
1500
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
IDRM
VTM
—
—
—
—
2.0
1.75
mA
V
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
50
50
50
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2
—
—
—
—
4.1
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10
—
—
V/μs
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR16PM-12LC
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
10
7 Tj = 25°C
5
3
2
120
Surge On-State Current (A)
On-State Current (A)
2
101
7
5
3
2
0
10
7
5
3
2
10
–1
20
2 3
5 7 10
1
2 3
5 7 10
Gate Trigger Current vs.
Junction Temperature
VGM = 10 V
PGM = 5 W
VGT = 1.5 V
PG(AV)
= 0.5 W
IGM = 2 A
IFGT I
IRGT I
IRGT III
VGD = 0.2 V
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10–1 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
40
Conduction Time (Cycles at 60Hz)
0
10
7
5
3
2
60
On-State Voltage (V)
103
7
5
2
Typical Example
IRGTIII
3
2
102
7
5
IFGTI
3
2
IRGTI
101
–60 –40–20 0 20 40 60 80 100120 140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
101
7
5
3
2
80
0 0
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
102
7
5
3
2
100
10
5.0
2
2 3 5 7103 2 3 5 7
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60 Hz)
Page 3 of 7
BCR16PM-12LC
Preliminary
No Fins
20
360° Conduction
Resistive,
15 inductive loads
10
5
0
0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
2
4
6
8 10 12 14 16 18 20
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
160
Ambient Temperature (°C)
Case Temperature (°C)
25
On-State Power Dissipation (W)
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
160
120
120 × 120 × t2.3
100
100 × 100 × t2.3
80
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
0
0
8 10 12 14 16 18 20
All fins are black painted
aluminum and greased
140
Natural convection
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
Maximum On-State Power Dissipation
3
140
120
100
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Page 4 of 7
BCR16PM-12LC
Preliminary
103
7
5
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120140 160
103
7
5
3
2
Distribution
T2+, G–
Typical Example
102
7
5
3
2
1
10
7 T2+, G+
5 Typical Example
3
2
10
T2–, G–
Typical Example
0
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100120 140160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
I Quadrant
60
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
140
120
Typical Example
Tj = 150°C
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/μs)
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
1
10
7
5
I Quadrant
Minimum
Characteristics
Value
3
2 Typical Example
0
Tj = 125°C, IT = 4 A
τ = 500 μs, VD = 200 V
f = 3 Hz
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR16PM-12LC
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
7
5 Typical Example
Tj = 150°C
3 IT = 4 A
2 τ = 500 μs
VD = 200 V
1 f = 3 Hz
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Commutation Characteristics (Tj = 150°C)
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
10
7
5
I Quadrant
3
2
0
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
103
7
5
Typical Example
IRGT III
IRGT I
3
2
IFGT I
2
10
7
5
3
2
101 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Gate Current Pulse Width (μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
330 Ω
V
Test Procedure I
A
6V
V
330 Ω
Test Procedure II
6Ω
A
6V
V
330 Ω
Test Procedure III
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Page 6 of 7
BCR16PM-12LC
Preliminary
Package Dimensions
Package Name
TO-220F(2)
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-B
Previous Code
T220F(2)
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.5Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Quantity
Vinyl sack
Plastic Magazine (Tube)
100
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR16PM-12LC
BCR16PM-12LC-A8
Note : Please confirm the specification about the shipping in detail.
R07DS1243EJ0300 Rev.3.00
Dec 24, 2014
Page 7 of 7
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