LIGITEK LA112B-SR.DBK-4 Led array Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA112B/SR.DBK-4
DATA SHEET
DOC. NO :
QW0905-LA112B/SR.DBK-4
REV.
:
A
DATE
:
29 - Dec - 2004
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA112B/SR.DBK-4
Page 1/5
Package Dimensions
2.5±0.5
4.3
8.2
SR
5.0
9.6
2.9
DBK
2.65
□0.5
3.2±0.3
TYP
4.45±0.5
2.54TYP
+
-
6.99±0.5
LSR2643-1
LDBK2643
2.9
3.1
3.3
4.3
1.5MAX
25.0MIN
□0.5
TYP
1.0MIN
2.54TYP
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without not
ice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/5
PART NO. LA112B/SR.DBK-4
Typical Electro-Optical Characteristics Current
SR CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
1.0
3.0
2.0
4.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
5.0
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
600
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
10
750
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA112B/SR.DBK-4
Page 4/5
Typical Electro-Optical Characteristics Curve
DBK CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1
01
2.5
2.0
1.5
1.0
0.5
0.0
1.0
2.0
3.0
4.0
5.0
1
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
400
450
500
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25 ℃
Forward Voltage@20mA
Normalize @25 ℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
10
550
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/5
PART NO. LA112B/SR.DBK-4
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of hogh temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
Thermal Shock Test
1.Ta=105 ℃±5 ℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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