MA4P7452F-1072T Non Magnetic SMQ HIPAX PIN Diode V 1.00 Features Non-Magnetic Package Suitable for MRI Applications Rectangular MELF SMQ Ceramic Package Hermetically Sealed Lower Rs for Lower Series Loss n Longer τ L for Lower Intermodulation Distortion n Lower Cj for Higher Series Isolation n Higher Average Incident Power Handling Capability n n n n Description The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic ( patent pending ) Metal Electrode Leadless Faced (MELF) package. The device incorporates M/A-COM’s proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes M/A-COM’s new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7452F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. Applications Designed for Automated Assembly These SMQ PIN diodes are designed for high volume tape and reel assembly. The rectangular package design provides for highly efficient automatic pick and place assembly techniques. The parallel flat surfaces are suitable for key jaw or vacuum pickup techniques. All solder able surfaces are tin plated and compatible with reflow and vapor phase soldering methods. Enviornmental Capability HIPAX devices are applicable for use in industrial and military applications and can be screened to meet the environmental requirements of MIL-STD-750, MIL-STD-202 as well as other military standards. The table below lists some of the MIL-STD 750 tests the device is designed to meet. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 100 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments. MIL-STD-750 Test Method Description High Temperature Storage 1031 +150 °C, for 340 Hours Temperature Shock 1051 -65 °C to +125 °C, 20 Cycles HTRB 1038 80% of rated VB, +150 °C, for 96 Hours Moisture Resistance 1021 No Initial Conditioning, 85 % RH, +85° C Gross Leak 1071 Cond. E Dye Penetrant Visual Vibration Fatigue 2046 20,000 G’s, 60 Hz, x, y, z axis Solderability 2026 Test Temperature = +245 °C Non Magnetic SMQ HIPAX PIN Diode MA4P7452F-1072T V 1.00 Electrical Specifications @ +25 °C Parameter Symbol Condition Unit Value Forward Voltage (Maximum) VF IF = +100 mA 1.0 VDC Voltage Rating (Minimum) VR Ir = -10 uA l – 150 l VDC Total Capacitance (Maximum) CT -100 V @ 100 MHz 0.7 pF Series Resistance (Maximum) RS +100 mA @ 100 MHz 0.9 Ohms Parallel Resistance (Minimum) RP -10 V @ 100 MHz 75 K Ω Carrier Lifetime (Nominal) τL +6 mA / -10 mA @ (50% - 90% Voltage) 9 us I-Region Length (Nominal) µm - 175 µm C.W. Thermal Resistance (Maximum) θ IH = 1A, IL = 10 mA, T = 1 mS 15 °C/W Power Dissipation in Free Air (Maximum) W IF = +100 mA 4W Power Dissipation with Diode Case at Tambient (Maximum) PD IF = +100 mA 10 W Absolute Maximum Ratings1 @ 25°C Parameter Absolute Maximum Operating Temperature -65 °C to +125 °C Storage Temperature -65 °C to +150 °C Diode Junction Temperature +175 °C Continuous Diode Mounting Temperature +235 °C for 10 seconds RF C.W. Incident Power + 50 dBm C.W. Forward D.C. Current + 250 mA Reverse Voltage @ -10 uA l – 200 V l 1. Exceeding these limits may cause permanent damage. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Non Magnetic SMQ HIPAX PIN Diode MA4P7452F-1072T V 1.00 Mechanical Outline Dimensions in Inches (mm) Case Style 1072 A Square Min / Max 0.080 / 0.095 (2.03 / 2.41) B Min / Max 0.115 / 0.135 (2.92/ 3.43) C Min / Max 0.008 / 0.030 (.203 / .762) 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Non Magnetic SMQ HIPAX PIN Diode MA4P7452F-1072T V 1.00 Typical Electrical Performance MA4P7452F-1072T Rs vs I 1000 100 MHz Rs_100 MHz Rs_1000 MHz 100 Rs ( Ohms ) 1000 MHz 10 1 0.1 0.01 0.10 1.00 10.00 100.00 I ( mA ) MA4P7452F-1072T Rp vs Voltage Rp ( Ohms ) 1.0E+05 1.0E+04 Rp_1500 MHz 1.0E+03 0.1 1.0 10.0 100.0 Voltage ( V ) 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Non Magnetic SMQ HIPAX PIN Diode MA4P7452F-1072T V 1.00 Typical Electrical Performance MA4P7452F-1072T Ct vs Voltage 1.00 1500 MHz Ct ( pF ) 100 MHz Ct_100 MHz Ct_1500 MHz 0.10 0.1 1.0 10.0 100.0 Voltage ( V ) MA4P7452F-1072T Ls vs Frequency 1.00 Ls ( nH ) L s _50 mA 0.10 100.0 1000.0 Frequency ( MHz ) 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 Non Magnetic SMQ HIPAX PIN Diode MA4P7452F-1072T V 1.00 Typical Non-Magnetic Performance Comparison of Magnetic Moment vs H Field for MA4P7400-1072T Non-Magnetic Series & MA4P1250-1072T Magnetic Devices 2.50E-02 2.00E-02 MA4P1250-1072T Magnetic 1.50E-02 Device Magnetic Moment ( EMU ) MA4P7400-1072T Non-Magnetic Series MA4P1250-1072T Magnetic 1.00E-02 5.00E-03 0.00E+00 -5.00E-03 MA4P7400-1072T Non-Magnetic Series -1.00E-02 -1.50E-02 -2.00E-02 -2.50E-02 -1.0E+04 -8.0E+03 -6.0E+03 -4.0E+03 -2.0E+03 0.0E+00 2.0E+03 4.0E+03 6.0E+03 8.0E+03 1.0E+04 H Field ( Oersteads ) Table 1 - Typical Magnetic Properties of Non-Magnetic MA4P7452F-1072T Device Vs. Conventional MA4P1250-1072T Magnetic Device Magnetic Property MA4P7470F-1072T Value MA4P1250-1072T Value Saturation Moment (EMU) @ H = HMAX Oersteads 2.3 x E-4 2.1 x E-2 Remanance Moment (EMU) @ H = 0 Oersteads 4.2 x E-8 7.1 x E-3 Coercivity (Oersteads) @ EMU = 0 Moment 1 59.2 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. n n n North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300