AP93T03AGMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
BVDSS
30V
RDS(ON)
4.5mΩ
ID
▼ RoHS Compliant & Halogen-Free
5
86A
G
S
D
Description
AP93T03A series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
®
The PMPAK 5x6 ppackage is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
S
S
S
G
®
PMPAK 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
.
Parameter
Symbol
Drain Current (Chip), VGS @ 10V
5
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
Rating
Units
30
V
+20
V
86
A
25.7
A
20.6
A
160
A
56.8
W
5
W
45
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
2.2
℃/W
25
℃/W
1
201411042
AP93T03AGMT-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
3.7
4.5
mΩ
VGS=4.5V, ID=20A
-
4.9
6.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=20A
-
40
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
19
30.4
nC
Qgs
Gate-Source Charge
VDS=15V
-
4.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
12
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
38
-
ns
tf
Fall Time
VGS=10V
-
23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1820 2900
pF
Coss
Output Capacitance
VDS=15V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
o
4.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω , IAS=30A.
5.Package limitation current is 60A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP93T03AGMT-HF
120
200
T C =25 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
10V
7.0V
6.0V
5.0V
V G = 4.0V
100
ID , Drain Current (A)
ID , Drain Current (A)
160
T C = 150 o C
120
80
80
60
40
40
20
0
0
0
4
8
12
16
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5.4
1.8
I D =20A
V G =10V
I D = 20 A
o
T C =25 C
1.6
4.6
.
4.2
Normalized RDS(ON)
RDS(ON) (mΩ)
5
1.4
1.2
1.0
3.8
0.8
3.4
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2.0
I D =250uA
1.6
Normalized VGS(th)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.2
0.8
0.4
4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP93T03AGMT-HF
I D = 20 A
V DS =15V
2000
6
C iss
1600
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
2400
8
4
1200
800
2
C oss
C rss
400
0
0
0
8
16
24
1
32
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this area
limited by RDS(ON)
100us
10
.
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1000
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
Single Pulse
0.01
0.1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
120
V DS =5V
100
ID , Drain Current (A)
ID , Drain Current (A)
80
80
60
40
T j =150 o C
o
T j =25 C
20
Limited by package
60
40
20
T j = -40 o C
0
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 12. Drain Current v.s. Case Temperature
4
AP93T03AGMT-HF
MARKING INFORMATION
93T03AGMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5