To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE FS3VS-9 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS ................................................................................ 450V ¡rDS (ON) (MAX) ................................................................. 3.5Ω ¡ID ............................................................................................ 3A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS Drain-source voltage Gate-source voltage ID IDM PD Drain current Drain current (Pulsed) Maximum power dissipation Tch Tstg — Channel temperature Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 450 ±30 V V 3 9 60 A A W –55 ~ +150 –55 ~ +150 1.2 °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω IS = 1A, VGS = 0V Channel to case Thermal resistance Unit Min. Typ. Max. 450 ±30 — — — — — — ±10 V V µA — 2 — — — 3 2.7 2.7 1 4 3.5 3.5 mA V Ω V 1.0 — — — 1.5 300 35 6 — — — — S pF pF pF — — — — 13 10 30 30 — — — — ns ns ns ns — 1.5 2.0 V — — 2.08 °C/W PERFORMANCE CURVES 80 60 40 20 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 100 0 50 100 150 tw=10µs 100µs 100 7 5 3 2 1ms 10ms DC 10–1 7 5 3 2 10–2 200 TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10 5 TC = 25°C Pulse Test TC = 25°C Pulse Test 8 6 VGS=20V 10V 8V 4 6V 2 DRAIN CURRENT ID (A) PD = 60W DRAIN CURRENT ID (A) 101 7 5 3 2 PD=60W VGS=20V 10V 8V 4 3 6V 2 1 5V 5V 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 32 24 ID=4A 16 3A 8 2A 1A 0 4 8 12 DRAIN CURRENT ID (A) 6 4 2 TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 6 4 2 4 8 12 16 TC=25°C 100 7 5 125°C 75°C 3 2 10–1 –1 10 20 VDS=10V Pulse Test 3 2 2 3 5 7 100 2 3 5 7 101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 7 5 5 3 2 3 2 Ciss 102 7 5 3 2 20V 0 10–2 2 3 5 7 10–1 2 3 5 7 100 2 3 5 7 101 20 TC=25°C VDS=50V Pulse Test 0 VGS=10V 8 DRAIN CURRENT ID (A) 8 0 TC=25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 10 CAPACITANCE Ciss, Coss, Crss (pF) 16 FORWARD TRANSFER ADMITTANCE yfs (S) 0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC=25°C Pulse Test Coss 101 7 Crss 5 Tch=25°C f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 40 tf 102 7 5 3 2 101 7 5 10–1 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω td(off) td(on) tr 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS3VS-9 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 12 200V 400V 8 4 101 7 5 4 8 12 16 75°C 4 2 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 100 7 5 3 2 –50 0 50 100 BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) 0.4 25°C 6 GATE CHARGE Qg (nC) 3 2 10–1 8 0 20 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C) VDS = 100V 0 VGS = 0V Pulse Test TC=125°C SOURCE CURRENT IS (A) 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C) 10 Tch = 25°C ID = 3A –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 D=1 2 0.5 100 7 0.2 5 3 2 10–1 7 5 3 2 0.1 PDM 0.05 0.02 0.01 tw T Single Pulse D= tw T 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999