ALD ALD114835SCL Quad/dual n-channel depletion mode epad precision matched pair mosfet array Datasheet

e
ADVANCED
LINEAR
DEVICES, INC.
TM
EPAD
EN
®
AB
LE
D
ALD114835/ALD114935
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
VGS(th)= -3.50V
PRECISION MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
APPLICATIONS
ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS
technology. These devices are intended for low voltage, small signal applications. They are excellent functional replacements for normally-closed relay applications, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETs have the unique characteristics of, when the gate is grounded, operating in the resistance mode for low drain voltage levels and in the current
source mode for higher voltage levels and providing a constant drain current.
• Functional replacement of Form B (NC) relay
• Zero power fail safe circuits
• Backup battery circuits
• Power failure detector
• Fail safe signal detector
• Source followers and buffers
• Precision current mirrors
• Precision current sources
• Capacitives probes
• Sensor interfaces
• Charge detectors
• Charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors
• Sample and Hold
• Alarm systems
• Current multipliers
• Analog switches
• Analog multiplexers
• Voltage comparators
• Level shifters
ALD114835/ALD114935 MOSFETs are designed for exceptional device electrical characteristics matching. As these devices are on the same monolithic
chip, they also exhibit excellent temperature tracking characteristics. They are
versatile as design components for a broad range of analog applications such
as basic building blocks for current sources, differential amplifier input stages,
transmission gates, and multiplexer applications. Besides matched pair electrical characteristics, each individual MOSFET also exhibits well controlled parameters, enabling the user to depend on tight design limits. Even units from
different batches and different date of manufacture have correspondingly well
matched characteristics.
These depletion mode devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying
applications in single 5V to +/-5V systems where low input bias current, low
input capacitance and fast switching speed are desired. These devices exhibit
well controlled turn-off and sub-threshold charactersitics and therefore can be
used in designs that depend on sub-threshold characteristics.
The ALD114835/ALD114935 are suitable for use in precision applications which
require very high current gain, beta, such as current mirrors and current sources.
A sample calculation of the DC current gain at a drain current of 3mA and gate
input leakage current of 30pA = 100,000,000. It is recommended that the user,
for most applications, connect the V+ pin to the most positive voltage and the
V- and IC pins to the most negative voltage in the system. All other pins must
have voltages within these voltage limits at all times.
FEATURES
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -3.50V +/- 0.05V
• Nominal RDS(ON) @VGS=0.0V of 540Ω
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range*
0°C to +70°C
0°C to +70°C
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
ALD114835SCL ALD114835PCL ALD114935SAL ALD114935PAL
PIN CONFIGURATIONS
ALD114835
IC*
1
GN1
2
DN1
3
S12
4
V-
5
DN4
6
V-
V-
M1
M2
V+
VM4
M3
16
IC*
15
GN2
14
DN2
13
V+
12
S34
11
DN3
GN3
GN4
7
10
IC*
8
9
V-
V-
IC*
SCL, PCL PACKAGES
ALD114935
IC*
1
GN1
2
DN1
3
S12
4
V-
V-
M1
M2
V-
8
IC*
7
GN2
6
DN2
5
V-
SAL, PAL PACKAGES
*IC pins are internally connected,
connect to V-
* Contact factory for industrial temp. range or user-specified threshold voltage values
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
10.6V
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
Power dissipation
500 mW
Operating temperature range SCL, PCL, SAL, PAL package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V V- = -5V TA = 25°C unless otherwise specified
ALD114835/ALD114935
Parameter
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
VGS(th)
-3.55
-3.50
-3.45
Offset Voltage
VGS(th)1-VGS(th)2
VOS
7
20
Offset VoltageTempco
TCVOS
5
µV/ °C
VDS1 = VDS2
GateThreshold Voltage Tempco
TCVGS(th)
-1.7
0.0
+1.6
mV/ °C
ID = 1µA, VDS = 0.1V
ID = 20µA, VDS = 0.1V
ID = 40µA, VDS = 0.1V
On Drain Current
IDS (ON)
12.0
3.0
mA
VGS = +6.0V, VDS = +5V
VGS = +0.5V, VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = +0.5V
VDS = +5.5V
Transconductance Mismatch
∆GFS
1.8
%
Output Conductance
GOS
68
µmho
Drain Source On Resistance
RDS (ON)
Drain Source On Resistance
Tolerance
V
IDS = 1µA, VDS = 0.1V
mV
540
Ω
∆RDS (ON)
5
%
Drain Source On Resistance
Mismatch
∆RDS (ON)
0.5
%
Drain Source Breakdown
Voltage
BVDSX
Drain Source Leakage Current1
IDS (OFF)
Gate Leakage Current1
10
Test Conditions
VGS = +0.5V
VDS = +5.5V
VDS = 0.1V
VGS = +0.0V
V
IDS = 1.0µA
VGS = -4.5V
10
400
4
pA
nA
VGS = -4.5V, VDS =+5V
TA = 125°C
IGSS
3
200
1
pA
nA
VDS = 0V, VGS = 5V
TA =125°C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V, RL= 5KΩ
Turn-off Delay Time
toff
10
ns
V+ = 5V, RL= 5KΩ
60
dB
f = 100KHz
Crosstalk
Notes:
1
Consists of junction leakage currents
ALD114835/ALD114935
Advanced Linear Devices
2 of 11
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic
quad/dual N-Channel MOSFETs matched at the factory using ALD’s
proven EPAD® CMOS technology. These devices are intended for
low voltage, small signal applications.
ALD’s Electrically Programmable Analog Device (EPAD) technology provides the industry’s only family of matched transistors with
a range of precision threshold values. All members of this family
are designed and actively programmed for exceptional matching of
device electrical characteristics. Threshold values range from 3.50V Depletion to +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V,
+0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any
customer desired value between -3.50V and +3.50V. For all these
devices, even the depletion and zero threshold transistors, ALD
EPAD technology enables the same well controlled turn-off, subthreshold, and low leakage characteristics as standard enhancement mode MOSFETs. With the design and active programming,
even units from different batches and different date of manufacture
have well matched characteristics. As these devices are on the
same monolithic chip, they also exhibit excellent tempco tracking.
This EPAD MOSFET Array product family (EPAD MOSFET) is available in the three separate categories, each providing a distinctly
different set of electrical specifications and characteristics. The first
category is the ALD110800/ALD110900 Zero-Threshold™ mode
EPAD MOSFETs. The second category is the ALD1108xx/
ALD1109xx enhancement mode EPAD MOSFETs. The third category is the ALD1148xx/ALD1149xx depletion mode EPAD
MOSFETs. (The suffix “xx” denotes threshold voltage in 0.1 V steps,
for example, xx=08 denotes 0.80V).
The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in
which the individual threshold voltage of each MOSFET is fixed at
zero. The threshold voltage is defined as IDS = 1uA @ VDS = 0.1V
when the gate voltage VGS = 0.00V. Zero threshold devices operate in the enhancement region when operated above threshold voltage and current level (VGS > 0.00V and IDS > 1uA) and subthreshold region when operated at or below threshold voltage and current level (VGS <= 0.00V and IDS < 1uA). This device, along with
other very low threshold voltage members of the product family,
constitute a class of EPAD MOSFETs that enable ultra low supply
voltage operation and nanopower type of circuit designs, applicable
in either analog or digital circuits.
The ALD1108xx/ALD1109xx (quad/dual) product family features
precision matched enhancement mode EPAD MOSFET devices,
which require a positive bias voltage to turn on. Precision threshold
values such as +1.40V, +0.80V, +0.20V are offered. No conductive
channel exists between the source and drain at zero applied gate
voltage for these devices, except that the +0.20V version has a
subthreshold current at about 20nA.
The ALD1148xx/ALD1149xx (quad/dual) features depletion mode
EPAD MOSFETs, which are normally-on devices when the gate
bias voltage is at zero volt. The depletion mode threshold voltage
is at a negative voltage level at which the EPAD MOSFET turns off.
Without a supply voltage and/or with VGS = 0.0V the EPAD
MOSFET device is already turned on and exhibits a defined and
controlled on-resistance between the source and drain terminals.
The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are
different from most other types of depletion mode MOSFETs and
certain types of JFETs in that they do not exhibit high gate leakage
ALD114835/ALD114935
currents and channel/junction leakage currents. When negative
signal voltages are applied to the gate terminal, the designer/user
can depend on the EPAD MOSFET device to be controlled, modulated and turned off precisely. The device can be modulated and
turned-off under the control of the gate voltage in the same manner
as the enhancement mode EPAD MOSFET and the same device
equations apply.
EPAD MOSFETs are ideal for minimum offset voltage and differential thermal response, and they are used for switching and amplifying applications in low voltage (1V to 10V or +/-0.5V to +/-5V) or
ultra low voltage (less than 1V or +/- 0.5V) systems. They feature
low input bias current (less than 30pA max.), ultra low power
(microWatt) or Nanopower (power measured in nanoWatt) operation, low input capacitance and fast switching speed. These devices can be used where a combination of these characteristics
are desired.
KEY APPLICATION ENVIRONMENT
EPAD( MOSFET Array products are for circuit applications in one
or more of the following operating environments:
* Low voltage: 1V to 10V or +/- 0.5V to +/- 5V
* Ultra low voltage: less than 1V or +/- 0.5V
* Low power: voltage x current = power measured in microwatt
* Nanopower: voltage x current = power measured in nanowatt
* Precision matching and tracking of two or more MOSFETs
ELECTRICAL CHARACTERISTICS
The turn-on and turn-off electrical characteristics of the EPAD
MOSFET products are shown in the Drain-Source On Current vs
Drain-Source On Voltage and Drain-Source On Current vs GateSource Voltage graphs. Each graph show the Drain-Source On
Current versus Drain-Source On Voltage characteristics as a function of Gate-Source voltage in a different operating region under
different bias conditions. As the threshold voltage is tightly specified, the Drain-Source On Current at a given gate input voltage is
better controlled and more predictable when compared to many
other types of MOSFETs.
EPAD MOSFETs behave similarly to a standard MOSFET, therefore classic equations for a n-channel MOSFET applies to EPAD
MOSFET as well. The Drain current in the linear region (VDS <
VGS - VGS(th)) is given by:
ID = u . COX . W/L . [VGS - VGS(th) - VDS/2] . VDS
where:
u = Mobility
COX = Capacitance / unit area of Gate electrode
VGS = Gate to Source voltage
VGS(th) = Turn-on threshold voltage
VDS = Drain to Source voltage
W = Channel width
L = Channel length
In this region of operation the IDS value is proportional to VDS value
and the device can be used as gate-voltage controlled resistor.
For higher values of VDS where VDS >= VGS - VGS(th), the saturation current IDS is now given by (approx.):
IDS = u . COX . W/L . [VGS - VGS(th)]2
Advanced Linear Devices
3 of 11
PERFORMANCE CHARACTERISTICS OF EPAD®
PRECISION MATCHED PAIR MOSFET FAMILY (cont.)
SUB-THRESHOLD REGION OF OPERATION
ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION
Low voltage systems, namely those operating at 5V, 3.3V or less,
typically require MOSFETs that have threshold voltage of 1V or
less. The threshold, or turn-on, voltage of the MOSFET is a voltage
below which the MOSFET conduction channel rapidly turns off. For
analog designs, this threshold voltage directly affects the operating
signal voltage range and the operating bias current levels.
For an EPAD MOSFET in this product family, there exist operating
points where the various factors that cause the current to increase
as a function of temperature balance out those that cause the current to decrease, thereby canceling each other, and resulting in net
temperature coefficient of near zero. One of this temperature stable
operating point is obtained by a ZTC voltage bias condition, which
is 0.55V above a threshold voltage when VGS = VDS, resulting in a
temperature stable current level of about 68uA. For other ZTC operating points, see ZTC characteristics.
At or below threshold voltage, an EPAD MOSFET exhibits a turnoff characteristic in an operating region called the subthreshold region. This is when the EPAD MOSFET conduction channel rapidly
turns off as a function of decreasing applied gate voltage. The conduction channel induced by the gate voltage on the gate electrode
decreases exponentially and causes the drain current to decrease
exponentially. However, the conduction channel does not shut off
abruptly with decreasing gate voltage, but decreases at a fixed rate
of approximately 116mV per decade of drain current decrease. Thus
if the threshold voltage is +0.20V, for example, the drain current is
1uA at VGS = +0.20V. At VGS = +0.09V, the drain current would
decrease to 0.1uA. Extrapolating from this, the drain current is
0.01uA (10nA) at VGS = -0.03V, 1nA at VGS = -0.14V, and so forth.
This subthreshold characteristic extends all the way down to current levels below 1nA and is limited by other currents such as junction leakage currents.
PERFORMANCE CHARACTERISTICS
Performance characteristics of the EPAD MOSFET product family
are shown in the following graphs. In general, the threshold voltage
shift for each member of the product family causes other affected
electrical characteristics to shift with an equivalent linear shift in
VGS(th) bias voltage. This linear shift in VGS causes the subthreshold I-V curves to shift linearly as well. Accordingly, the subthreshold
operating current can be determined by calculating the gate voltage drop relative from its threshold voltage, VGS(th).
RDS(ON) AT VGS=GROUND
At a drain current to be declared “zero current” by the user, the Vgs
voltage at that zero current can now be estimated. Note that using
the above example, with VGS(th) = +0.20V, the drain current still
hovers around 20nA when the gate is at zero volt, or ground.
LOW POWER AND NANOPOWER
When supply voltages decrease, the power consumption of a given
load resistor decreases as the square of the supply voltage. So
one of the benefits in reducing supply voltage is to reduce power
consumption. While decreasing power supply voltages and power
consumption go hand-in-hand with decreasing useful AC bandwidth
and at the same time increases noise effects in the circuit, a circuit
designer can make the necessary tradeoffs and adjustments in any
given circuit design and bias the circuit accordingly.
With EPAD MOSFETs, a circuit that performs a specific function
can be designed so that power consumption can be minimized. In
some cases, these circuits operate in low power mode where the
power consumed is measure in micro-watts. In other cases, power
dissipation can be reduced to nano-watt region and still provide a
useful and controlled circuit function operation.
ALD114835/ALD114935
Several of the EPAD MOSFETs produce a fixed resistance when
their gate is grounded. For ALD110800, the drain current at VDS =
0.1V is at 1uA at VGS = 0.0V. Thus just by grounding the gate of the
ALD110800, a resistor with RDS(ON) = ~100KOhm is produced.
When an ALD114804 gate is grounded, the drain current IDS = 18.5
uA@ VDS = 0.1V, producing RDS(ON) = 5.4KOhm. Similarly,
ALD114813 and ALD114835 produces 77uA and 185uA, respectively, at VGS = 0.0V, producing RDS(ON) values of 1.3KOhm and
540Ohm, respectively.
MATCHING CHARACTERISTICS
A key benefit of using matched-pair EPAD MOSFET is to maintain
temperature tracking. In general, for EPAD MOSFET matched pair
devices, one device of the matched pair has gate leakage currents,
junction temperature effects, and drain current temperature coefficient as a function of bias voltage that cancel out similar effects of
the other device, resulting in a temperature stable circuit. As mentioned earlier, this temperature stability can be further enhanced by
biasing the matched-pairs at Zero Tempco (ZTC) point, even though
that could require special circuit configuration and power consumption design consideration.
Advanced Linear Devices
4 of 11
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON CURRENT
(mA)
TA = +25°C
VGS-VGS(TH)=+5V
4
VGS-VGS(TH)=+4V
3
VGS-VGS(TH)=+3V
2
VGS-VGS(TH)=+2V
1
VGS-VGS(TH)=+1V
0
0
2
4
6
8
DRAIN-SOURCE ON RESISTANCE
(Ω)
2500
5
TA = 25°C
2000
1500
VGS = VGS(TH) +4V
1000
500
VGS = VGS(TH) +6V
0
100
10
10
DRAIN-SOURCE ON VOLTAGE (V)
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
2.5
20
VGS(TH) = -3.5V
TA = 25°C
VDS = +10V
15
TRANSCONDUCTANCE
(mA/V)
DRAIN- SOURCE ON CURRENT
(mA )
FORWARD TRANSFER CHARACTERISTICS
VGS(TH) = -1.3V
VGS(TH) = -0.4V
10
VGS(TH) = 0.0V
VGS(TH) = +0.2V
5
2.0
1.5
1.0
0.5
VGS(TH) = +1.4V
VGS(TH) = +0.8V
0
-4
0
-2
2
4
6
0
-50
10
8
-25
VGS(TH)=-1.3V
10
VGS(TH)=+1.4V
1000
100
1
0.1
DRAIN-SOURCE ON CURRENT
(nA)
VGS(TH)=0.0V
TA = +25°C
VDS=+0.1V
VGS(TH)=-0.4V
10000
VGS(TH)=-3.5V
VGS(TH)=+0.8V
VGS(TH)=+0.2V
-3
-2
-1
0
75
100
125
100
10
1
0.1
1
2
-0.5
GATE-SOURCE VOLTAGE (V)
ALD114835/ALD114935
50
VDS=0.1V
Slope ~= 110mV/decade
1000
0.01
VGS(th)
0.01
-4
25
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
SUBTHRESHOLD FORWARD TRANSFER
CHARACTERISTICS
100000
0
AMBIENT TEMPERATURE (°C)
GATE-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON CURRENT
(nA)
10000
1000
DRAIN-SOURCE ON CURRENT (µA)
VGS(th)
-0.4
VGS(th)
-0.3
VGS(th)
-0.2
VGS(th)
-0.1
VGS(th)
GATE-SOURCE VOLTAGE (V)
Advanced Linear Devices
5 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
5
DRAIN SOURCE ON CURRENT
( µA)
DRAIN SOURCE ON CURRENT
(mA)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
-55°C
4
-25°C
3
0°C
2
1
70°C
0
VGS(TH)-1
125°C
Zero Temperature
Coefficient (ZTC)
125°C
50
- 25°C
0
VGS(TH)+1 VGS(TH)+2 VGS(TH)+3 VGS(TH)+4
VGS(TH)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
VGS(TH) VGS(TH) VGS(TH) VGS(TH) VGS(TH)
+0.0
+0.4
+0.2
+0.6
+0.8
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
VGS(TH)+4
VDS=+10V
GATE SOURCE VOLTAGE (V)
DRAIN-SOURCE ON CURRENT
(µA)
10000
TA = 25°C
VGS=-4.0V to +5.4V
1000
100
10
1
VDS=+5V
VDS=+0.1V
VDS=+1V
0.1
IDS(ON)
VGS
1
10
100
1000
S
VDS = 0.5V
TA = +25°C
VGS(TH)+1
VDS = 5V
TA = +25°C
VGS(TH)
VDS = 5V
VDS = RON • IDS(ON)
TA = +125°C
1
0.1
10000
10
100
1000
10000
DRAIN SOURCE ON CURRENT (µA)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
4
5
TA = 25°C
3
4
OFFSET VOLTAGE (mV)
DRAIN SOURCE ON CURRENT
(mA)
VDS = 0.5V
TA = +125°C
VGS(TH)+2
ON RESISTANCE (KΩ)
VDS = +10V
3
VDS = +5V
2
1
VDS = +1V
0
REPRESENTATIVE UNITS
2
1
0
-1
-2
-3
-4
VGS(TH)
-50
VGS(TH)+1 VGS(TH)+2 VGS(TH)+3 VGS(TH)+4 VGS(TH)+5
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (°C)
OUTPUT VOLTAGE (V)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
VGS(TH)+4
600
GATE SOURCE VOLTAGE (V)
GATE LEAKAGE CURRENT (pA)
VDS
D
VGS(TH)+3
VGS(TH)-1
0.01
0.1
+1.0
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN-SOURCE ON CURRENT vs. ON RESISTANCE
100000
VGS(TH)
500
400
300
200
IGSS
100
0
-50
-25
0
25
50
75
100
125
D
VGS(TH)+3
+125°C
VGS
IDS(ON)
S
0.0V ≤ VDS ≤ 5.0V
VGS(TH)+2
+25°C
VGS(TH)+1
VGS(TH)
0.1
1
10
100
1000
10000
ON - RESISTANCE (KΩ)
AMBIENT TEMPERATURE (°C)
ALD114835/ALD114935
VDS
Advanced Linear Devices
6 of 11
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
TRANSFER CHARACTERISTICS
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
1.6
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
5
TRANSCONDUCTANCE
( mΩ-1)
-55°C ≤ TA ≤ +125°C
2.5
0
-2.5
TA = 25°C
VDS = +10V
VGS(TH) = -3.5V
1.2
VGS(TH) = -1.3V
VGS(TH) = -0.4V
VGS(TH) = 0.0V
0.8
VGS(TH) = +0.2V
0.4
VGS(TH) = +1.4V
VGS(TH) = +0.8V
0.0
-5
1
10
100
1000
-4
-2
0
6
8
10
2.5
0.6
VGS(TH)=-3.5V
0.5
VGS(TH)=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
0.3
0.2
0.0
0.1
0.2
2.0
0.5
1.0
DRAIN-SOURCE ON VOLTAGE (V)
2.0
1.5
1.0
25°C
0.5
VGS(th) = 0.4V
0.0
55°C
-0.5
100000 10000
5.0
VGS(th) = 0.2V
1000
100
1
10
0.1
DRAIN -SOURCE CURRENT (nA)
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
1.2
4.0
TA = 25°C
VDS = +10V
VDS = +0.1V ID = 1.0µA
THRESHOLD VOTAGE
(V)
TARNCONDUCTANCE
( mΩ-1)
4
SUBTHRESHOLD CHARACTERISTICS
GATE-SOURCE VOLTAGE (V)
GATE-SOURCE VOLTAGE - THRESHOLD
VOLTAGE (V)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
0.9
0.6
0.3
0.0
3.0
2.0
Vt = 1.4V
1.0
Vt = 0.0V
Vt = 0.8V
Vt = 0.2V
Vt = 0.4V
0
0
2
4
8
6
10
-50
-25
0
25
50
75
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
2.0
IDS = +1µA
VDS = +0.1V
VD = 0.1V
THRESHOLD VOLTAGE
(V)
0.2
0.1
0
25°C
-0.2
-0.3
-0.4
10000
55°C
1.0
VGS(th) = 0.0V
0.0
VGS(th) = -0.4V
-1.0
VGS(th) = -1.3V
-2.0
-3.0
VGS(th) = -3.5V
-4.0
1000
100
10
1
0.1
-25
DRAIN-SOURCE CURRENT (nA)
ALD114835/ALD114935
125
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
0.3
-0.1
100
AMBIENT TEMPERATURE (°C)
DRAIN -SOURCE ON CURRENT(mA)
GATE-SOURCE VOLTAGE - THRESHOLD
VOLTAGE (V)
VGS - VGS(th)
2
GATE-SOURCE VOLTAGE (V)
DRAIN SOURCE ON CURRENT (µA)
25
75
125
AMBIENT TEMPERATURE (OC)
Advanced Linear Devices
7 of 11
SOIC-16 PACKAGE DRAWING
16 Pin Plastic SOIC Package
E
Millimeters
S (45°)
D
Dim
Min
A
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-16
9.80
10.00
0.385
0.394
E
3.50
4.05
0.140
0.160
1.27 BSC
e
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
A
ø
0°
8°
0°
8°
A1
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD114835/ALD114935
C
ø
Advanced Linear Devices
8 of 11
PDIP-16 PACKAGE DRAWING
16 Pin Plastic DIP Package
E
E1
Millimeters
Dim
D
S
A2
A1
e
b
A
L
Inches
A
Min
3.81
Max
5.08
Min
0.105
Max
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-16
18.93
21.33
0.745
0.840
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
L
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
S-16
0.38
1.52
0.015
0.060
ø
0°
15°
0°
15°
b1
c
e1
ALD114835/ALD114935
ø
Advanced Linear Devices
9 of 11
SOIC-8 PACKAGE DRAWING
8 Pin Plastic SOIC Package
E
Millimeters
Dim
S (45°)
D
A
Min
1.35
Max
1.75
Min
0.053
Max
0.069
A1
0.10
0.25
0.004
0.010
b
0.35
0.45
0.014
0.018
C
0.18
0.25
0.007
0.010
D-8
4.69
5.00
0.185
0.196
E
3.50
4.05
0.140
0.160
1.27 BSC
e
A
A1
e
Inches
0.050 BSC
H
5.70
6.30
0.224
0.248
L
0.60
0.937
0.024
0.037
ø
0°
8°
0°
8°
S
0.25
0.50
0.010
0.020
b
S (45°)
H
L
ALD114835/ALD114935
C
ø
Advanced Linear Devices
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PDIP-8 PACKAGE DRAWING
8 Pin Plastic DIP Package
E
E1
Millimeters
D
S
A2
A1
e
b
b1
A
L
Inches
Dim
Min
Max
Min
Max
A
3.81
5.08
0.105
0.200
A1
0.38
1.27
0.015
0.050
A2
1.27
2.03
0.050
0.080
b
0.89
1.65
0.035
0.065
b1
0.38
0.51
0.015
0.020
c
0.20
0.30
0.008
0.012
D-8
9.40
11.68
0.370
0.460
E
5.59
7.11
0.220
0.280
E1
7.62
8.26
0.300
0.325
e
2.29
2.79
0.090
0.110
e1
L
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
S-8
1.02
2.03
0.040
0.080
0°
15°
0°
15°
ø
c
e1
ALD114835/ALD114935
ø
Advanced Linear Devices
11 of 11