Seme LAB BFC61 4th generation mosfet Datasheet

SEME
BFC61
LAB
4TH GENERATION MOSFET
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420)
9.65 (0.380)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4.83 (0.190)
3.56 (0.140)
5.33 (0.210)
4.83 (0.190)
2
1.40 (0.020)
0.51 (0.055)
16.51 (0.650)
14.22 (0.560)
6.86 (0.270)
5.84 (0.230)
3.05 (0.120)
2.54 (1.000)
3.73 (0.147)
3.53 (0.139) Dia.
VDSS
ID(cont)
RDS(on)
14.73 (0.580)
12.70 (0.500)
6.35 (0.250)
4.60 (0.181)
1 2 3
1.78 (0.070)
0.99 (0.390)
1.02 (0.040)
0.38 (0.015)
2.54 (0.100)
N o m.
1000V
3.6A
Ω
4.00Ω
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
5.08 (0.200)
N o m.
Pin 1 — Gate
Pin 2 — Drain
Pin 3 — Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
ID
1000
V
Continuous Drain Current
3.6
A
IDM
Pulsed Drain Current 1
14.4
A
VGS
Gate – Source Voltage
±30
V
PD
Total Power Dissipation @ Tcase = 25°C
125
W
TJ , TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
VGS = 0V , ID = 250µA
Min.
1000
Typ.
Max. Unit
BVDSS
Drain – Source Breakdown Voltage
ID(ON)
On State Drain Current 2
RDS(ON)
Drain – Source On State Resistance 2
VGS =10V , ID = 0.5 ID [Cont.]
4.00
Zero Gate Voltage Drain Current
VDS = VDSS
250
(VGS = 0V)
VDS = 0.8VDSS , TC = 125°C
1000
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
4
V
IDSS
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
V
3.6
2
A
Ω
µA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
SEME
BFC61
LAB
DYNAMIC CHARACTERISTICS
Ciss
Characteristic
Input Capacitance
Test Conditions
VGS = 0V
Coss
Output Capacitance
Crss
Min.
Typ.
805
Max. Unit
950
VDS = 25V
115
160
Reverse Transfer Capacitance
f = 1MHz
37
60
Qg
Total Gate Charge3
VGS = 10V
35
55
Qgs
Gate – Source Charge
VDD = 0.5 VDSS
4.3
6.5
Qgd
Gate – Drain (“Miller”) Charge
ID = ID [Cont.]
18
27
td(on)
Turn–on Delay Time
VGS = 15V
10
20
tr
Rise Time
VDD = 0.5 VDSS
9
18
td(off)
Turn-off Delay Time
ID = ID [Cont.]
32
48
tf
Fall Time
RG = 1.8Ω
23
46
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Characteristic
Continuous Source Current (Body Diode)
Test Conditions
ISM
Pulsed Source Current1(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
IS = – ID [Cont.] dls / dt = 100A/µs
Qrr
Reverse Recovery Charge
Min.
Typ.
Max. Unit
3.6
A
14.4
1.3
V
150
290
580
ns
0.8
1.65
3.3
µC
Min.
Typ.
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
SOA1
Safe Operating Area
SOA2
Safe Operating Area
ILM
Inductive Current Clamped
Test Conditions
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
Max. Unit
125
W
125
W
14.4
A
THERMAL CHARACTERISTICS
RθJC
Characteristic
Junction to Case
RθJA
Junction to Ambient
Min.
Typ.
Max. Unit
1.0
°C/W
80
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
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