LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET FEATURES LP2301ALT1G S-LP2301ALT1G ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) 3 ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 APPLICATIONS 2 ● Power Management in Note book SOT– 23 ● Portable Equipment ● Battery Powered System 3 ● Load Switch ● DSC ● We declare that the material of product are Halogen Free and compliance with RoHS requirements. Ordering Information Device Marking LP2301ALT1G S-LP2301ALT1G LP2301ALT3G S-LP2301ALT3G 1 Shipping 01A 3000/Tape& Reel 01A 10000/Tape& Reel 2 Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current TA=25℃ (Tj=150℃)* TA=70℃ Pulsed Drain Current Maximum Power Dissipation -2.0 ID IDM TA=25℃ TA=70℃ Operating Junction Temperature A -1.6 -10 A 0.7 PD W 0.45 TJ -55 to 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Thermal Resistance-Junction to Ambient* RθJA Typical Maximum 100 175 ℃/W e * The device mounted on 1in2 FR4 board with 2 oz copper Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G , S-LP2301ALT1G ELECTRICAL CHARACTERISTICS Symbol Parameter Limit Min V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance a VSD Diode Forward Voltage Typ Max Unit STATIC V -0.6 -1 V VDS=0V, VGS=±8V ±100 nA VDS=-20V, VGS=0V -1 μA VGS=-4.5V, ID= -2.8A 90 110 VGS=-2.5V, ID= -2.0A 110 150 IS=-1A, VGS=0V -0.7 -1.4 mΩ V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time VDS=-6V, RL =6Ω 30 td(off) Turn-Off Delay Time RGEN=6Ω, VGS=-4.5V 40 tf Turn-Off Fall time VDS=-6V, VGS=-4.5V, ID=-2.8A VDS=0V, VGS=0V, f=1MHz VDS=-15V, VGS=0V, f=1MHz 7.2 nC 2.2 1.2 7.5 Ω 480 pF 46 10 50 ns 11 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% Rev .O 2/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (TJ =25℃ Noted) LP2301ALT1G , S-LP2301ALT1G Rev .O 3/5 LESHAN RADIO COMPANY, LTD. Typical Characteristics (TJ =25℃ Noted) LP2301ALT1G , S-LP2301ALT1G Rev .O 4/5 LESHAN RADIO COMPANY, LTD. LP2301ALT1G , S-LP2301ALT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5