BAT 64...W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 BAT 64W BAT 64-04W BAT 64-05W VSO05561 BAT 64-06W ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BAT 64W 63s Q62702-A1159 1=A 2 n.c. 3=C BAT 64-04W 64s Q62702-A1160 1 = A1 2 = C2 3 = C1/A2 BAT 64-05W 65s Q62702-A1161 1 = A1 2 = A2 3 = C1/2 BAT 64-06W 66s Q62702-A1162 1 = C1 2 = C2 3 = A1/2 Package SOT-323 Maximum Ratings Parameter Symbol Value Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus) IFAV 120 Surge forward current (t< 100µs) IFSM 800 BAT 64W , TS≤120°C Ptot 250 Total power dissipat. BAT64-04/06W , TS≤111°C Ptot Total power dissipation BAR 64-05W , T S≤104°C Ptot 250 Junction temperature Tj 150 Storage temperature Tstg Total power dissipation Semiconductor Group Semiconductor Group 11 Unit mW 250 °C -55...+150 Sep-07-1998 1998-11-01 BAT 64...W Thermal Resistance Junction - ambient 1) BAT 64W RthJA ≤255 Junction - ambient 1) BAT 64-04/06W RthJA ≤290 Junction - ambient 1) BAT 64-05W RthJA ≤455 Junction - soldering point BAT 64W RthJS ≤120 Junction - soldering point BAT 64-04/06W RthJS ≤155 Junction - soldering point BAT 64-05W RthJS ≤185 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 2 IR - - 200 DC characteristics Reverse current µA VR = 30 V Reverse current VR = 30 V, TA = 85 °C Forward voltage mV VF I F = 1 mA - 320 350 I F = 10 mA - 385 430 I F = 30 mA - 440 520 I F = 100 mA - 570 750 - 4 6 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (V F) Reverse current IR = f (VR) T A = Parameter TA = Parameter ΙF 10 mA 2 BAT 64... EHB00057 ΙR 10 2 µA BAT 64... EHB00058 TA = 125 C 10 1 10 1 85 C TA = -40 25 85 125 10 0 C C C C 10 0 10 -1 25 C 10 -1 10 -2 10 -2 0 0.5 V 10 -3 1 VF Semiconductor Group Semiconductor Group 0 10 20 V 30 VR 33 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) *Package mounted on epoxy BAT 64W 300 mA TS TA IF 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64W BAT 64W 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 44 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) * Package mounted on epoxy BAT 64-04/06W 300 mA TS TA IF 200 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64-04/06 BAT 64-04/06W 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 55 Sep-07-1998 1998-11-01 BAT 64...W Forward current IF = f (TA*; T S) * Package mounted on epoxy BAT 64-05W 300 mA TS IF 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load IFmax / I FDC = f (tp) BAT 64-05W BAT 64-05W 10 3 10 2 IFmax / IFDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 - 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 66 Sep-07-1998 1998-11-01