AOSMD AO4812 30v dual n-channel mosfet Datasheet

AO4812
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO4812 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in buck converters.
ID (at VGS=10V)
VDS
30V
6A
RDS(ON) (at VGS=10V)
< 30mΩ
RDS(ON) (at VGS =4.5V)
< 42mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D1
Bottom View
D2
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±20
V
6
ID
TA=70°C
Maximum
30
5
A
IDM
30
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
5
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 9: February 2011
2
PD
TA=70°C
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.3
RθJA
RθJL
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-55 to 150
Typ
48
74
32
°C
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO4812
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
±100
nA
1.8
2.4
V
25
30
40
48
VGS=4.5V, ID=5A
33
42
mΩ
1
V
2.5
A
310
pF
VGS=10V, ID=6A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=6A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units
V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
255
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
45
1.6
mΩ
pF
35
50
pF
3.25
4.9
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
5.2
6.3
nC
Qg(4.5V)
2.55
3.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=6A
VGS=10V, VDS=15V, RL=2.5Ω,
RGEN=3Ω
0.85
nC
1.3
nC
4.5
ns
2.5
ns
14.5
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
8.5
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
2.2
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: February 2011
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Page 2 of 5
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
30
10V
VDS=5V
7V
25
4.5V
10
20
ID(A)
ID (A)
4V
15
3.5V
5
10
5
VGS=3V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
Normalized On-Resistance
40
35
RDS(ON) (mΩ )
25°C
125°C
VGS=4.5V
30
25
VGS=10V
1.6
VGS=10V
ID=6A
1.4
17
5
2
VGS=4.5V
10
I =5A
1.2
D
1
0.8
20
0
3
6
9
12
0
15
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
100
1.0E+02
ID=6A
1.0E+01
40
1.0E+00
60
IS (A)
RDS(ON) (mΩ )
80
125°C
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
40
1.0E-04
25°C
1.0E-05
20
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 9: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
10
VDS=15V
ID=6A
350
300
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
250
200
150
Coss
100
2
50
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
TA=25°C
10µs
RDS(ON)
limited
1000
100µs
1.0
Power (W)
ID (Amps)
10.0
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
100
10
10s
DC
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 9: February 2011
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Page 4 of 5
AO4812
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 9: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5
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