MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) Features • Simplifies Circuit Design • Reduces Board Space and Component Count • Pb−Free Packages are Available MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C °C/W Thermal Resistance, Junction-to-Ambient RqJA 508 (Note 1) 311 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C SOT−23 CASE 318 STYLE 6 A8x M G G 1 A8x = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ minimum pad 2. FR−4 @ 1.0 x 1.0 inch pad © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 7 Publication Order Number: MMUN2211LT1/D MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 350 350 − − − − − − − − − − − − − VCE(sat) − − 0.25 OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2238LT1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 Vdc MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 kW R1/R2 0.8 0.17 − − 0.8 0.055 0.38 1.0 0.21 − − 1.0 0.1 0.47 1.2 0.25 − − 1.2 0.185 0.56 ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k W) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k W) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k W) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k W) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k W) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k W) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc MMUN2211LT1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 250 200 150 100 1 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 0.01 RqJA= 625°C/W 50 0 −50 0 50 100 0.001 150 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75°C 25°C −25°C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25°C 0 20 30 50 40 Figure 4. Output Capcitance 10 25°C 10 10 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 0.2 V 75°C TA = −25°C 25°C Vin, INPUT VOLTAGE (V) TA = −25°C 1 0.1 0.01 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5°C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 75°C 1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 0.1 0 10 Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 MMUN2211LT1 Series − 1 TA = −25°C IC/IB = 10 25°C 75°C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 1000 VCE = 10 V TA = 75°C 10 10 IC, COLLECTOR CURRENT (mA) 1 Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25°C 2 1 75°C 25°C TA = −25°C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 50 40 0.001 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 100 Figure 8. DC Current Gain 4 3 −25°C 25°C 100 TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MMUN2211LT1 Series 10 IC/IB = 10 TA = −25°C 75°C 25°C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 TA = 75°C 25°C −25°C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 0.6 0.4 0.2 10 20 30 25°C 10 TA = −25°C 1 0.1 0.01 VO = 5 V 0.001 50 40 75°C 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) VCE = 10 V IC, COLLECTOR CURRENT (mA) 1 0 0 1000 TA = −25°C 25°C 75°C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MMUN2211LT1 Series 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 300 VCE = 10 TA = 75°C 250 25°C 200 −25°C 150 100 50 0 1 2 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) 4 Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = −25°C VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 4 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1000 VCE = 10 V IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 TA = 75°C 0.1 25°C −25°C 0.01 TA = 75°C 100 10 1 0.001 4 12 8 16 20 24 0 28 25 IC, COLLECTOR CURRENT (mA) 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC Figure 23. DC Current Gain 6 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 5 4 3 2 1 0 VO = 5 V 75°C 25°C 10 1 TA = −25°C 0.1 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 25°C −25°C TA = −25°C 75°C 1 0.1 0 25°C 10 20 IC, COLLECTOR CURRENT (mA) Figure 26. Output Voltage vs. Input Current http://onsemi.com 8 30 8 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 25°C 100 75°C 25°C TA = −25°C 0.01 TA = −25°C 10 VCE = 10 V 1 0.001 2 7 12 17 27 22 1 32 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C TA = −25°C 10 1 0.1 25°C VO = 5 V 0.01 0 10 20 30 40 50 60 0 4 2 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 75°C TA = −25°C 25°C 75°C 1 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage vs. Output Current http://onsemi.com 9 30 8 MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 10 MMUN2211LT1 Series ORDERING INFORMATION Device R1(k) R2(k) Package MMUN2211LT1 10 10 SOT−23 MMUN2211LT1G 10 10 SOT−23 (Pb−Free) 10 10 SOT−23 10 10 SOT−23 (Pb−Free) 22 22 SOT−23 22 22 SOT−23 (Pb−Free) 47 47 SOT−23 47 47 SOT−23 (Pb−Free) 10 47 SOT−23 10 47 SOT−23 (Pb−Free) 10 ∞ SOT−23 10 ∞ SOT−23 (Pb−Free) 4.7 ∞ SOT−23 4.7 ∞ SOT−23 (Pb−Free) 1.0 1.0 SOT−23 1.0 1.0 SOT−23 (Pb−Free) 2.2 2.2 SOT−23 2.2 2.2 SOT−23 (Pb−Free) 4.7 4.7 SOT−23 4.7 4.7 SOT−23 (Pb−Free) 4.7 47 SOT−23 4.7 47 SOT−23 (Pb−Free) MMUN2234LT1 22 47 SOT−23 MMUN2234LT1G 22 47 SOT−23 (Pb−Free) 22 47 SOT−23 MMUN2234LT3G 22 47 SOT−23 (Pb−Free) MMUN2238LT1 2.2 ∞ SOT−23 2.2 ∞ SOT−23 (Pb−Free) 100 ∞ SOT−23 100 ∞ SOT−23 (Pb−Free) MMUN2211LT3 Marking A8A MMUN2211LT3G MMUN2112LT1 MMUN2212LT1G A8B MMUN2213LT1 MMUN2213LT1G A8C MMUN2214LT1 MMUN2214LT1G A8D MMUN2215LT1 MMUN2215LT1G A8E MMUN2216LT1 MMUN2216LT1G A8F MMUN2230LT1 MMUN2230LT1G A8G MMUN2231LT1 MMUN2231LT1G A8H MMUN2232LT1 MMUN2232LT1G A8J MMUN2233LT1 MMUN2233LT1G MMUN2234LT3 MMUN2238LT1G A8K A8L A8R MMUN2241LT1 MMUN2241LT1G A8U Shipping† 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 11 MMUN2211LT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 DIM A A1 b c D E e L HE e A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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