IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications VDSS = 600 V ID25 = 18 A Symbol Test Conditions RDS(on) ≤ 0.56 Ω VDSS TJ = 25°C to 150°C 600 V 350 TJ = 25°C to 150°C; RGS = 1 MΩ 600 V PDC = VDGR VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 18 A IDM Tc = 25°C, pulse width limited by TJM 90 A IAR Tc = 25°C 18 A EAR Tc = 25°C TBD mJ IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω 5 V/ns dv/dt >200 V/ns 350 W TBD W 3.0 W RthJC TBD C/W RthJHS TBD C/W Maximum Ratings PDC PDHS Tc = 25°C, Derate 4.4W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions VDSS VGS = 0 V, ID = 4 ma VGS(th) VDS = VGS, ID = 250µΑ IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8VDSS VGS=0 max. V 4.6 TJ = 25C TJ =125C VGS = 20 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 50V, ID = 0.5ID25, pulse test V ±100 nA 50 1 µA mA 0.53 Ω 6.4 S • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages -55 TJ +175 175 TJM -55 Tstg Weight typ. 600 RDS(on) TL Features Characteristic Values (TJ = 25°C unless otherwise specified) min. S D D G S G = G S = 60 A = D 60 0B 6 IS = 0 1.6mm(0.063 in) from case for 10 s °C °C + 175 °C 300 °C 3.5 g • High Performance RF Z-MOSTM • Optimized for RF and high speed • Common Source RF Package • A = Gate Source Drain B = Drain Source Gate Isolated Package, no insulator required IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 1 RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz 2040 pF 160 pF 20 pF 33 pF 4 ns 4 ns 4 ns 6 ns 42 nC 13 nC 18 nC Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA Qgd Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle ≤2% Trr Ω Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 200 18 Α 108 A 1.5 V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,727,585 6,731,002 IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Fig. 1 Fig. 2 Gate Charge vs. Gate-to-Source Voltage V D S = 300V, ID = 9A, IG = 3m A Typical Output Characteristics 20 8V - 15V 7.5V 14 ID , Drain Currnet (A) Gate-to-Source Voltage (V) 16 12 10 8 6 4 15 7V 10 6.5V 5 6V 2 0 0 0 20 40 60 0 80 20 60 80 100 120 VDS, Drain-to-Source Voltage (V) Gate Charge (nC) Fig. 3 Fig. 4 Typical Transfer Characteristics V D S = 50V Extended Typical Output Characteristics 50 80 Top 45 40 ID , Drain Currnet (A) ID , Drain Current (A) 40 35 30 25 20 15 10 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 60 Bottom 40 20 5 0 0 5 6 7 8 9 10 11 12 13 14 0 15 Fig. 5 V D S vs. Capacitance Capacitance (pF) 10000 1000 100 10 1 60 120 180 240 300 V DS Voltage (V) 40 60 80 100 VDS, Drain-to-Source Voltage (V) VGS, Gate-to Source Voltage (V) 0 20 360 420 480 120 IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET Fig. 6 Package Drawing 60: 1=G, 2=D, 3=S 60A: 1=G, 2=S, 3= D 60B: 1=D, 2=S, 3=G Doc #dsIXZR16N60_A/B REV 08/09 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com