IXYS IXZR16N60A Z-mos rf power mosfet Datasheet

IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
NChannel
Enhancement
N-Channel
Enhancement
ModeMode
Switch Mode RF MOSFET
Low Qg and RZ-MOS
g
Low Capacitance
TM MOSFET Process
High for
dv/dt
Optimized
RF Operation
Nanosecond
Ideal for Class C, D,Switching
& E Applications
VDSS
=
600 V
ID25
=
18 A
Symbol
Test Conditions
RDS(on)
≤
0.56 Ω
VDSS
TJ = 25°C to 150°C
600
V
350
TJ = 25°C to 150°C; RGS = 1 MΩ
600
V
PDC
=
VDGR
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
18
A
IDM
Tc = 25°C, pulse width limited by TJM
90
A
IAR
Tc = 25°C
18
A
EAR
Tc = 25°C
TBD
mJ
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5
V/ns
dv/dt
>200
V/ns
350
W
TBD
W
3.0
W
RthJC
TBD
C/W
RthJHS
TBD
C/W
Maximum Ratings
PDC
PDHS
Tc = 25°C, Derate 4.4W/°C above 25°C
PDAMB
Tc = 25°C
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 4 ma
VGS(th)
VDS = VGS, ID = 250µΑ
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8VDSS
VGS=0
max.
V
4.6
TJ = 25C
TJ =125C
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
gfs
VDS = 50V, ID = 0.5ID25, pulse test
V
±100
nA
50
1
µA
mA
0.53
Ω
6.4
S
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
•
•
−
−
•
•
•
cycling capability
IXYS advanced Z-MOS process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
-55
TJ
+175
175
TJM
-55
Tstg
Weight
typ.
600
RDS(on)
TL
Features
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
S
D D
G S G
= G S
=
60 A = D
60 0B
6
IS = 0
1.6mm(0.063 in) from case for 10 s
°C
°C
+ 175
°C
300
°C
3.5
g
• High Performance RF Z-MOSTM
• Optimized for RF and high speed
• Common Source RF Package
•
A = Gate Source Drain
B = Drain Source Gate
Isolated Package, no insulator
required
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
1
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
2040
pF
160
pF
20
pF
33
pF
4
ns
4
ns
4
ns
6
ns
42
nC
13
nC
18
nC
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 1 Ω (External)
Toff
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 IG = 3mA
Qgd
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = Is, VGS=0 V, Pulse test, t ≤ 300µs, duty cycle
≤2%
Trr
Ω
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
200
18
Α
108
A
1.5
V
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
5,640,045
6,404,065
6,583,505
6,710,463
6,727,585
6,731,002
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Fig. 1
Fig. 2
Gate Charge vs. Gate-to-Source Voltage
V D S = 300V, ID = 9A, IG = 3m A
Typical Output Characteristics
20
8V - 15V
7.5V
14
ID , Drain Currnet (A)
Gate-to-Source Voltage (V)
16
12
10
8
6
4
15
7V
10
6.5V
5
6V
2
0
0
0
20
40
60
0
80
20
60
80
100
120
VDS, Drain-to-Source Voltage (V)
Gate Charge (nC)
Fig. 3
Fig. 4
Typical Transfer Characteristics
V D S = 50V
Extended Typical Output Characteristics
50
80
Top
45
40
ID , Drain Currnet (A)
ID , Drain Current (A)
40
35
30
25
20
15
10
12V - 15V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
60
Bottom
40
20
5
0
0
5
6
7
8
9
10
11
12
13
14
0
15
Fig. 5
V D S vs. Capacitance
Capacitance (pF)
10000
1000
100
10
1
60
120
180
240
300
V DS Voltage (V)
40
60
80
100
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to Source Voltage (V)
0
20
360
420
480
120
IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
Fig. 6 Package Drawing
60: 1=G, 2=D, 3=S
60A: 1=G, 2=S, 3= D
60B: 1=D, 2=S, 3=G
Doc #dsIXZR16N60_A/B REV 08/09
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An
IXYS Company
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Fort Collins, CO USA 80526
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Email: [email protected]
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