Datasheet LIN Transceiver for Automotive BD41030FJ-C BD41030HFN-C General Description Key Specifications BD41030FJ-C,BD41030HFN-C is the best transceiver for BUS system which need LIN (Local Interconnect Network) master and slave protocol. BD41030FJ-C,BD41030HFN-C is low standby electricity consumption in sleep mode. BD41030FJ-C:SOP-J8 BD41030HFN-C:HSON8 Supply Voltage: Supply Current (Sleep mode): Supply Current: (Standby mode; Recessive) Supply Current: (Normal mode; Recessive) Supply Current: (Normal mode; Dominant) 5V to 27V 1μA to 8μA 100μA to 1000μA 100μA to 1000μA 200μA to 2000μA Features Package(s) Compliant with LIN2.0,LIN2.1,LIN2.2,LIN2.2A (Note 1) AEC-Q100 Qualified Absolute maximum ratings of LIN pin is -27V to+40V Max transmission rate 20kbps Low Electro Magnetic Emission (EME) High Electro Magnetic Immunity (EMI) High impedance at power off for bus Interface (RXD/TXD) with protocol layer corresponds to 3.3V/5.0V logic. Built-in terminator for LIN slave Standby power consumption in sleep mode Transmit data(TXD) dominant time-out function Resistant to LIN-BAT/GND short-circuit Built-in Thermal Shut Down(TSD) (Note1:Grade1) W(Typ) x D(Typ) x H(Max) 4.90mm x 6.00mm x 1.65mm ■SOP-J8 SOP-J8(BD41030FJ-C) ■HSON8 2.90mm x 3.00mm x 0.60mm Applications LIN communication for Automotive networks. HSON8(BD41030HFN-C) Typical Application Circuit(s) VECU LIN Bus line 5V/3.3V VIN Regulator 100nF 100nF EN Only Master node 2.4kΩ INH VDD BAT RXD Micro Controller BD41030FJ-C BD41030HFN-C TXD 10kΩ 33kΩ 1kΩ NWAKE NSLP LIN GND GND (1) (1) Master:C=1nF; Slave:C=220pF Figure 1. Typical Application Circuit 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 1/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Contents General Description ........................................................................................................................................................................ 1 Features.......................................................................................................................................................................................... 1 Applications .................................................................................................................................................................................... 1 Key Specifications........................................................................................................................................................................... 1 Package(s)...................................................................................................................................................................................... 1 Typical Application Circuit(s) ........................................................................................................................................................... 1 Contents ......................................................................................................................................................................................... 2 Pin Configuration(s) ........................................................................................................................................................................ 3 Pin Description(s) ........................................................................................................................................................................... 3 Block Diagram(s) ............................................................................................................................................................................ 3 Description of Block(s) .................................................................................................................................................................... 4 Absolute Maximum Ratings ............................................................................................................................................................ 6 Recommended Operating Conditions ............................................................................................................................................. 6 Electrical Characteristics................................................................................................................................................................. 7 Timing Chart ................................................................................................................................................................................. 11 Application Example(s) ................................................................................................................................................................. 13 Power Dissipation ......................................................................................................................................................................... 14 I/O equivalent circuit(s) ................................................................................................................................................................. 15 Operational Notes ....................................................................................................................................................................... 16 Ordering Information ..................................................................................................................................................................... 18 Marking Diagrams ......................................................................................................................................................................... 18 Physical Dimension, Tape and Reel Information ........................................................................................................................... 19 Revision History ............................................................................................................................................................................ 21 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 2/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Pin Configuration(s) SOP-J8 HSON8 (TOP VIEW) (TOP VIEW) RXD 1 8 INH NSLP 2 7 BAT NWAKE 3 6 LIN TXD 4 5 GND RXD 1 8 INH NSLP 2 7 BAT NWAKE 3 6 LIN TXD 4 5 GND Figure 2. Pin Configuration Pin Description(s) 4 TXD Table 1. Pin Description Function Received data output pin (Open Drain). “L” is output at standby mode. Sleep control input pin (“L” Active mode). Shift to sleep mode by “L” input in normal mode. Local wake-up input pin (“L” Active mode). Active at leading edge. Transmission data input pin 5 GND Ground 6 LIN LIN bus input and output pin. 7 BAT 8 INH Power supply pin. Sleep status indicator. “Hi-z” at sleep mode and “H” in the other modes. Pin No. Pin Name 1 RXD 2 NSLP 3 NWAKE Block Diagram(s) Figure 3. Block diagram 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 3/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Description of Block(s) 1. Sleep mode In sleep mode, the transmit/receive function is not available and BD41030FJ-C is under the condition of low power consumption mode. In this mode BD41030FJ-C shifts to sleep mode at startup of power supply (VBAT) when NSLP is “L” or in normal mode also when pin NSLP is “L”. During sleep mode, one of the following wake-up events triggers a shift of state: ・Pin NWAKE “H”→“L” (Shift to standby mode) ・Pin LIN “H”→“L”→“H” (Shift to standby mode) ・Pin NSLP “L”→“H” (Shift to normal mode) The above-mentioned wake-up events shift the mode when a state remains for a given period of time (tNWAKE, tBUS, tgotonorm). Hereinafter, a wake-up event on pin NWAKE is defined as Local wake-up, and a wake-up event on pin LIN is defined as Remote wake-up. 2. Standby mode When a wake-up event occurs on pin NWAKE or pin LIN in sleep mode, BD41030FJ-C shifts to standby mode. In standby mode, pins become the following state: ・Pin INH “H” (≒VBAT voltage) ・Pin RXD “L” (Informs the microcontroller of being in standby mode.) ・Pin LIN Slave resistor ON BD41030FJ-C shifts from standby mode to normal mode when pin NSLP input switches to “H”. 3. Normal mode BD41030FJ-C shifts to normal mode when pin NSLP switches to “H” in sleep mode or standby mode. In normal mode, data can be transmitted or received through the bus line. When receiving data, the transceiver informs a LIN bus input from pin RXD to the microcontroller. When transmitting data, the transceiver converts a TXD input signal to a slew-rate-controlled LIN bus signal and informs the bus line of the converted signal. The maximum operating frequency in this mode is 10 kHz. From this mode, BD41030FJ-C shifts to sleep mode when pin NSLP input switches to “L” and this state remains for a given period of time (tgotosleep). unpower state *VPOR =reset Voltage VBAT>VPOR and NSLP=H : after L to H > tgotonorm VBAT>VPOR and NSLP=L Standby mode VBAT<VPOR NSLP RXD INH Termination Transmitter NSLP=H : after L to H > t gotonorm L L H (ON) 30kΩ OFF VBAT<VPOR NWAKE=L : after H to L > t NWAKE or LIN=L to H : after LIN=L > t BUS Normal mode NSLP RXD INH Termination Transmitter Sleep mode H LIN bus data H (ON) 30kΩ ON NSLP=H : after L to H > t gotonorm NSLP=L : after H to L > t gotosleep while TXD=H NSLP RXD INH Termination Transmitter L Hi-z Hi-z Weak pullup OFF Figure 4. State Transition Chart Table 2. The state of the pin in each mode MODE NSLP TXD RXD INH TRANSMITTER Sleep mode L pull-down Hi-z Hi-z OFF Standby mode L pull-down L H OFF Normal mode H pull-down H：recessive state L：dominant state H ON 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 4/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C 4. TXD dominant time-out counters Fail-safe function A TXD dominant time-out counter prevents the bus line from being driven to a permanent dominant state (blocking all network communication) in case pin TXD input is forced permanently low by a hardware and/or software application failure. The timer is trigged by a negative edge on pin TXD and in case the value exceeds the internal timer value (tdom), the transmitter becomes disabled and drives the bus line into a recessive state. The timer is reset by a positive edge on pin TXD input. 5. Fail-safe function ・Pin TXD provides a pull-down to GND in order to force a predefined level on input pin TXD in case the pin TXD is not connected. ・Pin NSLP provides a pull-down to GND in order to force the transceiver into sleep mode in case the pin NSLP is not connected. ・Pin RXD is “Hi-z” in case of lost power supply on pin VBAT. ・The output driver at pin LIN will be off when junction temperature exceeds TJ activating the TSD circuit without relation to input signal at pin TXD. Because the thermal shut down circuitry has a hysteresis band, junction temperature depends on TXD terminal input signal for the LIN terminal output driver again when 15 degrees Celsius (Typ) degree falls from detective temperature. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 5/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Absolute Maximum Ratings (Ta = 25°C) Table 3. Absolute Maximum Ratings Parameter Symbol (Note 1) Supply voltage on pin BAT Rating Unit DC voltage on pin LIN VBAT VTXD, VRXD, VNSLP VLIN DC voltage on pin NWAKE VNWAKE INWAKE -15 mA VINH -0.3 to VBAT + 0.3 V DC voltage on pin TXD, RXD, NSLP Current on pin NWAKE (Note 2) DC voltage on pin INH Output current at pin INH V -0.3 to +7.0 V -27 to +40 V -1 to VBAT + 0.3 V IINH -50 to +15 mA (Note 3) Pd 674 mW (Note 4) Pd 630 mW Power dissipation (SOP-J8) Power dissipation (HSON8) -0.3 to +40.0 Storage temperature range Tstg -55 to +150 °C Junction Max temperature Tjmax +150 °C VESD 4000 V Electro static discharge （HBM） (Note 4) (Note 1) Pd, ASO should not be exceeded. (Note 2) Available only when VNWAKE < VGND-0.3V. Current flow to pin GND. (Note 3) Regarding above Ta=25°C, Pd decreased at 5.40mW/°C for temperatures when mounted on 70x70x1.6mm Glass-epoxy PCB. (Note 4) Regarding above Ta=25°C, Pd decreased at 5.04mW/°C for temperatures when mounted on 70x70x1.6mm Glass-epoxy PCB. (Note 5) JEDEC qualified. Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Recommended Operating Conditions Table 4. Recommended Operating Conditions Parameter Symbol Range Unit Supply voltage VBAT 5.0 to 27.0 V Operating temperature range Topr -40 to +125 °C 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 6/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at Ta=25°C; VBAT =12V; unless otherwise specified) Table 5. Electrical Characteristics Parameter Symbol Min Typ Max Unit Conditions BAT Supply current 1 on pin BAT (Sleep mode) IBAT1 1 3 8 μA Supply current 2 on pin BAT (Standby mode, Recessive) IBAT2 100 400 1000 μA IBAT3 300 900 2000 μA IBAT4 100 400 1000 μA IBAT5 200 1000 2000 μA UVLO threshold voltage VUVLO - - 4.9 V POR threshold voltage VPOR - - 4.3 V VIH 2.0 - 7.0 V Supply current 3 on pin BAT (Standby mode, Dominant) (Note 1) Supply current 4 on pin BAT (Normal mode, Recessive) Supply current 5 on pin BAT (Normal mode, Dominant) (Note 1) Sleep mode. VLIN = VBAT VNWAKE = VBAT VTXD = 0V VNSLP = 0V Standby mode. VLIN = VBAT (bus: Recessive) VINH = VBAT VNWAKE = VBAT VTXD = 0V VNSLP = 0V Standby mode. VBAT = 12V VLIN = 0V (bus: Dominant) VINH = VBAT VNWAKE = VBAT VTXD = 0V VNSLP = 0V Normal mode. VLIN = VBAT (bus: Recessive) VINH = VBAT VNWAKE = VBAT VTXD = 5V VNSLP = 5V Normal mode. VBAT = 12V (bus: Dominant) VINH = VBAT VNWAKE = VBAT VTXD = 0V VNSLP = 5V TXD High level input voltage Low level input voltage VIL -0.3 - +0.8 V Hysteresis voltage Vhys 0.03 - 0.50 V Pull-down resistor RTXD 125 350 800 kΩ VTXD = 5V IIL -5.0 0.0 +5.0 μA VTXD = 0V Low level input current NSLP High level input voltage VIH 2.0 - 7.0 V Low level input voltage VIL -0.3 - +0.8 V Hysteresis voltage Vhys 0.03 - 0.50 V Pull-down resistor RNSLP 125 350 800 kΩ VNSLP = 5V IIL -5.0 0.0 +5.0 μA VNSLP = 0V Low level input current (Note 1) When VBAT is 12V or more, add to the circuit current the value calculated by the following expression because IBAT depends on pull-up resistor inside LIN terminal. I BAT(increase) = VBAT − 12V 20kΩ (20kΩ is the minimum value of pull-up resistor inside LIN terminal) 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 7/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at Ta=25°C; VBAT =12V; unless otherwise specified) Table 6. Electrical Characteristics Parameter Symbol Min Typ Max Unit Conditions Low level output current IOL 1.3 3.5 - mA High level leakage current IOZH -5.0 0.0 +5.0 μA High level input voltage VIH VBAT 1.0 - Low level input voltage VIL -0.3 - High level leakage current IIH -5.0 0.0 +5.0 μA VNWAKE = 27V VBAT = 27V Pull-up current IIL -30 -10 -3 μA VNWAKE = 0V Switch-on resistance between pins BAT and INH RINH - 30 50 Ω High level leakage current IOZH -5.0 0.0 +5.0 μA Standby mode, Normal mode. IINH = -15mA, VBAT = 12V Sleep mode. VINH = VBAT = 27V - VBAT V VTXD = 5V, ILIN = 0mA - 1.2 V VTXD = 0V, VBAT = 7.3V VTXD = 0V, VBAT = 7.3V RL(LIN-BAT) = 1kΩ RXD (open-drain) Normal mode. VLIN = 0V VRXD = 0.4V Normal mode. VLIN = VBAT VRXD = 5V NWAKE VBAT + 0.3 VBAT 3.3 V V INH LIN LIN recessive output voltage VO_rec VO_dom1 LIN dominant output voltage VBAT ｘ 0.9 - VO_dom2 0.6 - - V VO_dom3 - - 2.0 V VTXD = 0V, VBAT = 18V VTXD = 0V, VBAT = 18V RL(LIN-BAT) = 1kΩ VO_dom4 0.8 - - V High level leakage current IIH -5.0 0.0 +5.0 μA LIN pull-up current IIL -10.0 -5.0 -2.0 μA RSLAVE 20 30 47 kΩ CLIN - - 30 pF IO_SC0 40 - 200 mA Input leakage current at the receiver operating (included pull-up resistor) IBUS_PAS_dom -1 - - mA Input leakage current at the receiver operating IBUS_PAS_rec - - 20 μA Loss of ground leakage current IBUS_NO_GND -1 - 1 mA Loss of battery leakage current IBUS_NO_BAT - - 100 μA VLIN = VBAT = 18V, VTXD = 0V t < tdom VLIN = 0V VBAT = 12V VTXD = 5V VLIN = 18V VBAT = 8V VTXD = 5V VBAT = VGND = 12V VLIN = 0V to 18V VBAT = 0V VLIN = 18V V VBAT = 7.3V to 27.0V V VBAT = 7.3V to 27.0V Vcn_rx = (Vth_dom + Vth_rec)/2 V VBAT = 7.3V to 27.0V Vth_hys = Vth_rec - Vth_dom Pull-up resistance (Slave termination resistance to pin BAT) Capacitance of pin LIN (Note 2) Short-circuit output current Receiver threshold voltage Receiver center voltage Receiver threshold (Note 3) voltage (Note 3) hysteresis Vth_rx Vcn_rx Vth_hys VBAT x VBAT x 0.4 0.6 VBAT x VBAT x VBAT x 0.475 0.500 0.525 VBAT x VBAT x VBAT x 0.100 0.140 0.175 VLIN = VBAT Sleep mode. VLIN = VNSLP = 0V Standby mode, Normal mode. VLIN = 0V, VBAT = 12V (Note 2) It is a design guarantee parameter, and is not production tested. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 8/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at Ta=25°C; VBAT =12V; unless otherwise specified) Table 7. Electrical Characteristics Parameter AC characteristics Symbol Min Typ Max Unit tPropRxDom - - 6.0 μs tPropRxRec - - 6.0 μs ⊿td_(BUS-RXD) -2.0 0.0 +2.0 μs Conditions (Note 7) Duty cycle 1 (Note 4, Note 5) D1 0.396 - - Duty cycle 2 (Note 4, Note 6) D2 - - 0.581 Duty cycle 3 (Note 4, Note 5) D3 0.417 - - Duty cycle 4 (Note 4, Note 6) D4 - - 0.590 tBUS 30 70 150 μs tNWAKE 7 20 50 μs Normal mode CL(LIN-GND) = 0nF RL(LIN-BAT) = ∞ Voltage on LIN externally forced. LIN tf, tr < 20ns CRXD = 20pF RRXD = 2.4kΩ ⊿td_(BUS-RXD)= tPropRxDom-tPropRxRec Normal mode THRec(max) = 0.744 x VBAT THDom(max) = 0.581 x VBAT VBAT=7.0 to 18.0V tBit=50μs Normal mode THRec(min) = 0.422 x VBAT THDom(min) = 0.284 x VBAT VBAT=7.6 to 18.0V tBit=50μs Normal mode THRec(max) = 0.778 x VBAT THDom(max) = 0.616 x VBAT VBAT=7.0 to 18.0V tBit=96μs Normal mode THRec(min) = 0.389 x VBAT THDom(min) = 0.251 x VBAT VBAT=7.6 to 18.0V tBit=96μs Sleep mode (Remote wake-up) Sleep mode (Local wake-up) tgotonorm 2 5 10 μs Shift from Sleep/Standby mode to Normal mode tgotosleep 2 5 10 μs tdom 6 12 20 ms Shift from Normal mode to Sleep mode VTXD = 0V RXD propagation delay RXD propagation delay failure Dominant time for wake-up via bus Dominant time for wake-up via pin NWAKE Time period for mode change from sleep or standby mode into normal mode Time period for mode change from normal mode into sleep mode TXD dominant time out (Note 3) (Note 4) Load condition at bus ( CL(LIN-GND);RL(LIN-BAT) ) : 1nF;1kΩ / 6.8nF;660Ω / 10nF;500Ω (Note 5) D1, D3 = t Bus_rec (min) 2 xt Bit 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 9/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C (Note 6) D 2, D 4 = t Bus_rec (max) 2 xt Bit (Note 7) AC characteristic evaluation circuit diagram VCC 2.4kΩ 100nF RXD BAT INH RL 20pF NSLP NWAKE LIN CL TXD GND 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 10/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Timing Chart 0.5xVBAT LIN 0.5xVBAT 0% TPropRXDom TPropRXRec 50% RXD 50% Figure 5. AC characteristic timing chart tBit tBit TXD tBus_dom(max) tBus_rec(min) THRec(max) THDom(max) LIN VBAT THRec(min) THDom(min) tBus_dom(min) tBus_rec(max) Figure 6. Bus timing chart LIN t<tBus TXD tBus t<tgotonorm RXD NSLP INH MODE Sleep Standby Normal Figure 7. Remote wake-up (Sleep→Standby→Normal) 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 11/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Figure 8. Local wake-up (Sleep→Standby→Normal) Figure 9. Wake-up/Sleep-in with NSLP (Sleep→Normal→Sleep) 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 12/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Application Example(s) VECU LIN Bus line Only Master node 5V/3.3V 2.4kΩ INH VDD BAT RXD Micro Controller 100nF BD41030FJ-C BD41030HFN-C TXD 1kΩ NWAKE NSLP LIN GND GND (1) (1) Master:C=1nF; Slave:C=220pF Figure 10. Application Example 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 13/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Power Dissipation ■SOP-J8 800 Power Dissipation : Pd[mW] 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature : Ta[℃] ■HSON8 800 Power Dissipation : Pd[mW] 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 Ambient Temperature : Ta[℃] (Note 1) Measured Board (70mm x 70mm x 1.6mm, glass epoxy 1-layer) (Note 2) These values are changed by number of layer and copper foil area. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 14/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C I/O equivalent circuit(s) ① ② RXD RXD ③ NSLP NSLP ④ NWAKE BAT TXD BAT TXD NWAKE ⑥ LIN ⑧ INH BAT LIN BAT BAT BAT INH 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 15/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Thermal Consideration Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the Pd rating. 6. Recommended Operating Conditions These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter. 7. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. Operation Under Strong Electromagnetic Field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. 9. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 10. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 11. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 16/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Operational Notes – continued 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Figure 101. Example of monolithic IC structure 13. Ceramic Capacitor When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 14. Area of Safe Operation (ASO) Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe Operation (ASO). 15. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 17/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Ordering Information B D 4 1 0 3 0 Part Number x x Package FJ: SOP-J8 HFN: HSON8 x - CGxx Product Rank C: for Automotive Packaging and forming specification G: Halogen free E2 (SOP-J8): Embossed tape and reel TR (HSON8): Embossed tape and reel Marking Diagrams SOP-J8(TOP VIEW) Part Number Marking 4 1 0 3 0 LOT Number 1PIN MARK HSON8(TOP VIEW) Part Number Marking D 4 1 0 3 0 LOT Number 1PIN MARK 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 18/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Physical Dimension, Tape and Reel Information Package Name SOP-J8 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 19/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Physical Dimension, Tape and Reel Information Package Name HSON8 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 20/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 BD41030FJ-C BD41030HFN-C Revision History Date Revision Changes 12.Jun.2015 001 18.Aug.2016 002 New Release ・HSON8 Full-scale revision by the package lineup addition ・Typical Performance Curves deletion ・P1 Modified Typical Application Circuit ・P3 Modified Pin Description ・P3 Modified Block diagram ・P4 Modified State Transition Chart ・P5 Modified Fail-safe function ・P6 Absolute Maximum Ratings Modified DC voltage on pin NWAKE ・P7 Electrical Characteristics Added「UVLO threshold voltage」 「POR threshold voltage」 ・P8 Electrical Characteristics Modified「Capacitance of pin LIN」 ・P13 Modified Application Example ・P14 Modified Power Dissipation ・P15 Modified I/O equivalent circuit(s) 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays .www.rohm.com TSZ02201-0E2E0H500640-1-2 © 2015 ROHM Co., Ltd. All rights reserved. 21/21 TSZ22111 • 14 • 001 2016.08.18 Rev.002 Notice Precaution on using ROHM Products 1. (Note 1) If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSϪ CLASSϩb CLASSϪ CLASSϪ CLASSϫ CLASSϪ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001 Datasheet BD41030FJ-C - Web Page Buy Distribution Inventory Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS BD41030FJ-C SOP-J8 2500 2500 Taping inquiry Yes