FDD9407_F085 N-Channel Power Trench® MOSFET August 2013 FDD9407_F085 N-Channel Power Trench® MOSFET 40V, 100A, 2.0mΩ D Features Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A D G G UIS Capability S RoHS Compliant Qualified to AEC Q101 Applications D-PAK TO-252 (TO-252) S Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/alternator Distributed Power Architectures and VRM Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Parameter Gate to Source Voltage Ratings 40 Units V ±20 V Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 100 Pulsed Drain Current TC = 25°C See Figure4 Single Pulse Avalanche Energy (Note 2) 171 A mJ Power Dissipation 227 W Derate above 25oC 1.52 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance Junction to Case RθJA Maximum Thermal Resistance Junction to Ambient -55 to + 175 oC 0.66 oC/W 52 oC/W (Note 3) Package Marking and Ordering Information Device Marking FDD9407 Device FDD9407_F085 Package D-PAK(TO-252) Reel Size 13” Tape Width 12mm Quantity 2500 units Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJAis determined by the user's board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. ©2013 Fairchild Semiconductor Corporation FDD9407_F085_F085 Rev. C1 1 www.fairchildsemi.com Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 40V, VGS = 0V 40 - - V - - 1 μA TJ = 25oC TJ = 175oC(Note 4) - - 1 mA - - ±100 nA 2.0 3.1 4.0 V - 1.6 2 mΩ - 2.64 3.22 mΩ VGS = ±20V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 80A, VGS= 10V TJ = 25oC TJ = 175oC(Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller“ Charge VDS = 25V, VGS = 0V, f = 1MHz VDD = 32V ID = 80A - 6390 - pF - 1580 - pF - 95 - pF - 2.3 - Ω - 86 112 nC - 12 15.6 nC - 30 - nC - 15 - nC Switching Characteristics ton Turn-On Time - - 120 ns td(on) Turn-On Delay Time - 27 - ns tr Rise Time td(off) Turn-Off Delay Time tf toff - 48 - ns - 42 - ns Fall Time - 18 - ns Turn-Off Time - - 97 ns V VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source to Drain Diode Voltage Trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 80A, VGS = 0V - - 1.25 ISD = 40A, VGS = 0V - - 1.2 V IF = 80A, dISD/dt = 100A/μs, VDD=32V - 58 88 ns - 83 143 nC Notes: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. FDD9407_F085 Rev. C1 2 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY PACKAGE VGS = 10V CURRENT LIMITED BY SILICON 200 150 100 50 0 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 IDM, PEAK CURRENT (A) VGS = 10V 100 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 175 - TC I = I2 150 SINGLE PULSE 1 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD9407_F085 Rev. C1 3 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Typical Characteristics IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 0.1 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25oC TJ = -55oC 50 0 3 0.01 0.1 1 10 100 1000 300 TJ = 175oC 100 STARTING TJ = 150oC Figure 6. Unclamped Inductive Switching Capability VDD = 5V 150 10 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 200 STARTING TJ = 25oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 250 100 1 1E-3 100 Figure 5. Forward Bias Safe Operating Area 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 175 oC TJ = 25 oC 10 1 0.0 7 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 250 250 200 150 5.5V 100 50 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1000 1000 VGS 15V Top 10V 8V 7V 6V 5.5V Bottom 80μs PULSE WIDTH Tj=25oC 0 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 VGS 15V5.5V Top 10V 8V 7V 6V 5.5V Bottom 5.5V 100 50 0 0.0 2 Figure 9. Saturation Characteristics FDD9407_F085 Rev. C1 200 80μs PULSE WIDTH Tj=175oC 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Typical Characteristics ID = 80A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 30 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 24 18 TJ = 175oC 12 TJ = 25oC 6 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. Rdson vs Gate Voltage 1.4 1.2 1.0 ID = 80A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 ID = 1mA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.0 1.1 0.8 1.0 0.6 0.9 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.8 -80 200 Figure 13. Normalized Gate Threshold Voltage vs Temperature VGS, GATE TO SOURCE VOLTAGE(V) Ciss 1000 Coss 100 f = 1MHz VGS = 0V Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs Drain to Source Voltage FDD9407_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 CAPACITANCE (pF) 1.6 1.2 VGS = VDS ID = 250μA 10 0.1 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX Figure 12. Normalized Rdson vs Junction Temperature 1.2 0.4 -80 1.8 10 ID = 80A 8 VDD = 20V 6 4 2 0 0 20 40 60 80 Qg, GATE CHARGE(nC) 100 Figure 16. Gate Charge vs Gate to Source Voltage 5 www.fairchildsemi.com FDD9407_F085 N-Channel Power Trench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET Global Power ResourceSM PowerXS™ BitSiC™ TinyBoost® GreenBridge™ Programmable Active Droop™ Build it Now™ TinyBuck® ® QFET CorePLUS™ Green FPS™ TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ DEUXPEED® ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC™ EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver® FACT® VCX™ ® OptoHiT™ SuperSOT™-8 FAST ® ® VisualMax™ OPTOLOGIC SupreMOS FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™ tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I65 FDD9407_F085 Rev. C1 6 www.fairchildsemi.com