ISSI IS61LV632A-6TQI 32k x 32 synchronous fast static ram Datasheet

ISSI
®
IS61LV632A
32K x 32 SYNCHRONOUS FAST STATIC RAM
FEATURES
• Fast access time:
– 4 ns-125 MHz; 5 ns-100 MHz;
6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin TQFP and PQFP package
• 3.3V Vcc and 2.5V VCCQ for 2.5V I/Os
• Two Clock enables and one Clock disable to
eliminate multiple bank bus contention.
• Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
These control pins can be connected to GNDQ
or VCCQ to alter their power-up state
APRIL 2001
DESCRIPTION
The ISSI IS61LV632A is a high-speed, low-power synchronous static RAM designed to provide a burstable, highperformance, secondary cache for the i486™, Pentium™,
680X0™, and PowerPC™ microprocessors. It is organized
as 32,768 words by 32 bits, fabricated with ISSI's advanced
CMOS technology. The device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single clock
input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3
controls DQ17-DQ24, BW4 controls DQ25-DQ32, conditioned
by BWE being LOW. A LOW on GW input would cause all bytes
to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated internally by the IS61LV632A and controlled by the ADV (burst
address advance) input pin.
Asynchronous signals include output enable (OE), sleep mode
input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH
input on the ZZ pin puts the SRAM in the power-down state.
When ZZ is pulled LOW (or no connect), the SRAM normally
operates after three cycles of the wake-up period. A LOW
input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ
(or no connect) on MODE pin selects INTERLEAVED Burst.
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
1
ISSI
IS61LV632A
®
BLOCK DIAGRAM
MODE
CLK
Q0
CLK
A0'
A0
BINARY
COUNTER
ADV
ADSC
ADSP
A14-A0
Q1
CE
A1'
A1
32K x 32
MEMORY
ARRAY
CLR
15
D
Q
13
15
ADDRESS
REGISTER
CE
CLK
32
GW
BWE
BW4
D
32
Q
DQ32-DQ25
BYTE WRITE
REGISTERS
CLK
D
BW3
Q
DQ24-DQ17
BYTE WRITE
REGISTERS
CLK
D
BW2
Q
DQ16-DQ9
BYTE WRITE
REGISTERS
CLK
D
BW1
Q
DQ8-DQ1
BYTE WRITE
REGISTERS
CLK
CE1
CE2
CE3
4
D
Q
ENABLE
REGISTER
INPUT
REGISTERS
CLK
32
OUTPUT
REGISTERS
CLK
DATA[32:1]
OE
CE
CLK
D
Q
ENABLE
DELAY
REGISTER
CLK
OE
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
PIN CONFIGURATION
A6
A7
CE1
CE2
BW4
BW3
BW2
BW1
CE3
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
100-Pin TQFP and PQFP (Top View)
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQ16
DQ15
VCCQ
GNDQ
DQ14
DQ13
DQ12
DQ11
GNDQ
VCCQ
DQ10
DQ9
GND
NC
VCC
ZZ
DQ8
DQ7
VCCQ
GNDQ
DQ6
DQ5
DQ4
DQ3
GNDQ
VCCQ
DQ2
DQ1
NC
MODE
A5
A4
A3
A2
A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
NC
NC
NC
DQ17
DQ18
VCCQ
GNDQ
DQ19
DQ20
DQ21
DQ22
GNDQ
VCCQ
DQ23
DQ24
NC
VCC
NC
GND
DQ25
DQ26
VCCQ
GNDQ
DQ27
DQ28
DQ29
DQ30
GNDQ
VCCQ
DQ31
DQ32
NC
PIN DESCRIPTIONS
A0-A14
Address Inputs
OE
Output Enable
CLK
Clock
DQ1-DQ32
Data Input/Output
ADSP
Processor Address Status
ZZ
Sleep Mode
ADSC
Controller Address Status
MODE
Burst Sequence Mode
ADV
Burst Address Advance
VCC
+3.3V Power Supply
BW1-BW4
Synchronous Byte Write Enable
GND
Ground
BWE
Byte Write Enable
VCCQ
GW
Global Write Enable
Isolated Output Buffer Supply:
+2.5V
CE1, CE2, CE3
Synchronous Chip Enable
GNDQ
Isolated Output Buffer Ground
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
3
ISSI
IS61LV632A
®
TRUTH TABLE
ADDRESS
USED
CE1
CE2
CE3
Deselected, Power-down
None
H
X
X
X
Deselected, Power-down
None
L
L
X
Deselected, Power-down
None
L
X
Deselected, Power-down
None
L
Deselected, Power-down
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
OPERATION
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
ADSP ADSC
ADV
WRITE
OE
DQ
L
X
X
X
High-Z
L
X
X
X
X
High-Z
H
L
X
X
X
X
High-Z
L
X
H
L
X
X
X
High-Z
L
X
H
H
L
X
X
X
High-Z
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
Q
High-Z
D
Q
High-Z
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
Notes:
1. All inputs except OE must meet setup and hold times for the Low-to-High transition of clock (CLK).
2. Wait states are inserted by suspending burst.
3. X means don't care. WRITE=L means any one or more byte write enable signals (BW1-BW4) and BWE are LOW or GW is LOW.
WRITE=H means all byte write enable signals are HIGH.
4. For a Write operation following a Read operation, OE must be HIGH before the input data required setup time and held HIGH
throughout the input data hold time.
5. ADSP LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one or more
byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of clock.
PARTIAL TRUTH TABLE
FUNCTION
READ
READ
WRITE Byte 1
WRITE All Bytes
WRITE All Bytes
4
GW
BWE
BW1
BW2
BW3
H
H
H
X
L
H
X
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
BW4
X
H
H
L
X
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
TBIAS
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to GND for I/O Pins
Voltage Relative to GND for
for Address and Control Inputs
Value
Unit
–10 to +85
°C
–55 to +150
°C
1.8
W
100
mA
–0.5 to VCCQ + 0.3
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
5
ISSI
IS61LV632A
®
OPERATING RANGE
Range
Commercial
Ambient Temperature
0°C to +70°C
VCC
3.3V ±5%
VCCQ
2.375V min., 3.465V max.
–40°C to +85°C
3.3V ±5%
2.375V min., 3.465V max.
Industrial
DC ELECTRICAL CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –1.0 mA
2.0
—
V
VOL
Output LOW Voltage
IOL = 1.0 mA
—
0.4
V
VIH
Input HIGH Voltage
1.7
VCCQ + 0.3
V
VIL
Input LOW Voltage
–0.3
0.7
V
ILI
Input Leakage Current
GND - VIN - VCCQ(2)
Com.
Ind.
–5
–10
5
10
µA
ILO
Output Leakage Current
GND - VOUT - VCCQ, OE = VIH
Com.
Ind.
–5
–10
5
10
µA
POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Sym. Parameter
Test Conditions
ICC
AC Operating
Supply Current
Device Selected,
All Inputs = VIL or VIH
OE = VIH,
Cycle Time • tKC min.
ISB
Standby Current
Device Deselected,
VCC = Max.,
All Inputs = VIH or VIL
CLK Cycle Time • tKC min.
IZZ
Power-Down Mode ZZ = VCCQ, CLK Running
Current
All Inputs - GND + 0.2V
or • VCC – 0.2V
4Typ. Max.
5Typ. Max.
6Typ. Max.
7Typ. Max.
8Typ. Max.
Unit
Com.
Ind.
150 180
— —
140 170
— —
130 160
140 170
120 150
130 160
110 140
120 150
mA
mA
Com.
Ind.
15
—
45
—
15
—
45
—
15
20
45
50
15
20
45
50
15
20
45
50
mA
mA
Com.
Ind.
1
—
10
—
1
—
10
—
1
2
10
20
1
2
10
20
1
2
10
20
mA
mA
Note:
1. MODE pin has an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect,
tied to GND, or tied to VCCQ.
2. MODE pin should be tied to Vcc or GND. It exhibits ±10 µA maximum leakage current
when tied to - GND + 0.2V or • Vcc – 0.2V.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level for I/O Pins
Input Pulse Level for Input Pins
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
0V to 3.0V
1.5 ns
1.25V
See Figures 1 and 2
AC TEST LOADS
317 Ω
2.5V
ZO = 50Ω
OUTPUT
Output
Buffer
30 pF
50Ω
1.25V
Figure 1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
5 pF
Including
jig and
scope
351 Ω
Figure 2
7
ISSI
IS61LV632A
®
READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4
-6
Min. Max.
-7
Min. Max.
-8
Min. Max.
Parameter
tKC
Cycle Time
8
—
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
4
—
4
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
4
—
4
—
4
—
6
—
6
—
ns
Clock Access Time
—
4
—
5
—
6
—
7
—
8
ns
tKQX
Clock High to
Output Invalid
1.5
—
1.5
—
2
—
2
—
2
—
ns
tKQLZ(2,3)
Clock High to
Output Low-Z
0
—
0
—
0
—
0
—
0
—
ns
tKQHZ(2,3)
Clock High to
Output High-Z
1.5
4
1.5
5
2
6
2
6
2
6
ns
tOEQ
Output Enable to
Output Valid
—
4
—
5
—
6
—
6
—
6
ns
tOEQX(2)
Output Disable to
Output Invalid
0
—
0
—
0
—
0
—
0
—
ns
tOELZ(2,3)
Output Enable to
Output Low-Z
0
—
0
—
0
—
0
—
0
—
ns
tOEHZ(2,3)
Output Disable to
Output High-Z
—
4.5
—
4.8
—
6
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time 2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tAVH
Address Advance
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCFG
Configuration Setup(1)
35
—
35
—
45
—
66.7
—
80
—
ns
tKQ
(2)
Min. Max.
-5
Min. Max.
Symbol
Unit
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with the load in Figure 2.
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
READ CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
tSS
ADSC initiate read
tSH
ADSC
tAVH
tAVS
Suspend Burst
ADV
tAS
A14-A0
tAH
RD1
RD2
tWS
tWH
tWS
tWH
RD3
GW
BWE
BW4-BW1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1 Masks ADSP
CE1
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE3
tOEHZ
tOEQ
OE
DATAOUT
tKQX
tOEQX
tOELZ
High-Z
1a
2a
2b
2c
2d
tKQLZ
3a
tKQHZ
tKQ
DATAIN
High-Z
Pipelined Read
Single Read
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
Burst Read
Unselected
9
ISSI
IS61LV632A
®
WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4
Min. Max.
-5
Min. Max.
-6
Min. Max.
-7
Min. Max.
-8
Min. Max.
Symbol
Parameter
Unit
tKC
Cycle Time
8
—
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
4
—
4
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
4
—
4
—
4
—
6
—
6
—
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tDS
Data In Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time 2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tDH
Data In Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tAVH
Address Advance
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCFG
Configuration Setup(1)
25
—
35
—
45
—
52
—
60
—
ns
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
ADSC initiate Write
ADSC
tAVH
ADV must be inactive for ADSP Write tAVS
ADV
tAS
A14-A0
tAH
WR1
WR2
tWS
tWH
tWS
tWH
tWS
tWH
WR3
GW
BWE
BW4-BW1
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
tWS
tWH
WR2
WR3
CE1 Masks ADSP
CE1
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE3
OE
DATAOUT
High-Z
tDS
DATAIN
High-Z
Single Write
tDH
1a
BW4-BW1 only are applied to first cycle of WR2
2a
2b
Burst Write
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
2c
2d
3a
Write
Unselected
11
ISSI
IS61LV632A
®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4
-6
Min. Max.
-7
Min. Max.
-8
Min. Max.
Parameter
tKC
Cycle Time
8
—
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
4
—
4
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
4
—
4
—
4
—
6
—
6
—
ns
Clock Access Time
—
4
—
5
—
6
—
7
—
8
ns
tKQX
Clock High to
Output Invalid
1.5
—
1.5
—
1.5
—
2
—
2
—
ns
tKQLZ(2,3)
Clock High to
Output Low-Z
0
—
0
—
0
—
0
—
0
—
ns
tKQHZ(2,3)
Clock High to
Output High-Z
1.5
4
1.5
5
1.5
5
2
6
2
6
ns
tOEQ
Output Enable to
Output Valid
—
4.5
—
4.8
—
6
—
6
—
6
ns
tOEQX(2)
Output Disable to
Output Invalid
0
—
0
—
0
—
0
—
ns
tOELZ(2,3)
Output Enable to
Output Low-Z
0
—
0
—
0
—
0
—
ns
tOEHZ(2,3)
Output Disable to
Output High-Z
—
4.5
—
4.8
—
6
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time 2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCFG
Configuration Setup(1)
25
—
35
—
45
—
52
—
60
—
ns
tKQ
(2)
Min. Max.
-5
Min. Max.
Symbol
Unit
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with the load in Figure 2.
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
READ/WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
tSS
tSH
ADSC
ADV
tAS
A14-A0
tAH
RD1
RD2
WR1
tWS
tWH
tWS
tWH
RD3
GW
BWE
tWS
BW4-BW1
tWH
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1 Masks ADSP
CE1
CE2 and CE3 only sampled with ADSP or ADSC
CE2
Unselected with CE3
CE3
tOEHZ
tOEQ
OE
DATAOUT
High-Z
2a
1a
tKQLZ
tKQ
DATAIN
tKQX
tOEQX
tOELZ
2c
2d
tKQHZ
tKQX
tKQHZ
High-Z
1a
tDS
Single Read
tDH
Single Write
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
2b
Burst Read
Unselected
13
ISSI
IS61LV632A
®
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
-4
-6
Min. Max.
-7
Min. Max.
-8
Min. Max.
Parameter
tKC
Cycle Time
8
—
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
4
—
4
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
4
—
4
—
4
—
6
—
6
—
ns
Clock Access Time
—
4
—
5
—
6
—
7
—
8
ns
tKQX
Clock High to
Output Invalid
1.5
—
1.5
—
2
—
2
—
2
—
ns
tKQLZ(4,5)
Clock High to
Output Low-Z
0
—
0
—
0
—
0
—
0
—
ns
tKQHZ(4,5)
Clock High to
Output High-Z
1.5
4
1.5
5
1.5
6
2
6
2
6
ns
tOEQ
Output Enable to
Output Valid
—
4.5
—
5
—
6
—
6
—
6
ns
tOEQX(4)
Output Disable to
Output Invalid
0
—
0
—
0
—
0
—
0
—
ns
tOELZ(4,5)
Output Enable to
Output Low-Z
0
—
0
—
0
—
0
—
0
—
ns
tOEHZ(4,5)
Output Disable to
Output High-Z
—
4.5
—
4.8
—
6
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status
Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time 2.5
—
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status
Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
0.5
—
ns
tKQ
(4)
Min. Max.
-5
Min. Max.
Symbol
(1)
Unit
tZZS
ZZ Standby
2
—
2
—
2
—
2
—
2
—
cyc
tZZREC
ZZ Recovery(2)
2
—
2
—
2
—
2
—
2
—
cyc
tCFG
Configuration Setup(3)
25
—
35
—
45
—
52
—
60
—
ns
Notes:
1. The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Data
retention is guaranteed when ZZ is asserted and clock remains active.
2. ADSC and ADSP must not be asserted for at least 2 cyc after leaving ZZ state.
3. Configuration signal MODE is static and must not change during normal operation.
4. Guaranteed but not 100% tested. This parameter is periodically sampled.
5. Tested with load in Figure 2.
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
ISSI
IS61LV632A
®
SNOOZE AND RECOVERY CYCLE TIMING
tKC
CLK
tSS
tSH
tAS
tAH
tKH
tKL
ADSP
ADSC
ADV
A14-A0
RD2
RD1
GW
BWE
BW4-BW1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1
CE2
CE3
tOEHZ
tOEQ
OE
tOEQX
tOELZ
DATAOUT
High-Z
1a
tKQLZ
tKQ
DATAIN
tKQX
tKQHZ
High-Z
tZZS
tZZREC
ZZ
Single Read
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
Snooze with Data Retention
Read
15
ISSI
IS61LV632A
®
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns)
Order Part Number
Package
4
4
IS61LV632A-4TQ
IS61LV632A-4PQ
TQFP
PQFP
5
5
IS61LV632A-5TQ
IS61LV632A-5PQ
TQFP
PQFP
6
6
IS61LV632A-6TQ
IS61LV632A-6PQ
TQFP
PQFP
7
7
IS61LV632A-7TQ
IS61LV632A-7PQ
TQFP
PQFP
8
8
IS61LV632A-8TQ
IS61LV632A-8PQ
TQFP
PQFP
Industrial Range: –40°C to +85°C
Speed (ns)
Order Part Number
Package
6
6
IS61LV632A-6TQI
IS61LV632A-6PQI
TQFP
PQFP
7
7
IS61LV632A-7TQI
IS61LV632A-7PQI
TQFP
PQFP
8
8
IS61LV632A-8TQI
IS61LV632A-8PQI
TQFP
PQFP
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
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