MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - Green Products MBR30…CT /MBRB30…CT /MBR30…CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR30…CT TO-220AB Case styles MBRB30…CT D2PAK MBR30…CT-1 TO-262 Mechanical Dimensions: In Inches / mm TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 4.85 0.25 2.89 0.96 15.6 2.70 1.40 2.20 8° D2PAK TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 30 35 CT/CT-1 SSG YY WW L MBR3045CT = Device Type = Package type = Forward Current (30A) = Reverse Voltage (35V) = Configuration = SSG = Year = Week = Lot Number MBRB3035CT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR3035CT MBRB3035CT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Peak Inverse Voltage VRWM - Max. Average Forward IF(AV) 50% duty cycle @TC = 123°C, rectangular wave form Max. Peak One Cycle NonRepetitive Surge Current IFSM 8.3 ms, half Sine pulse Max. MBR3035CT 35 MBRB3035CT MBR3035CT-1 MBR3045CT 45 MBRB3045CT MBR3045CT-1 15(Per leg) 30(Per Device) Units 240 A V A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current (per leg) * Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (per leg) Max. Voltage Rate of Change * CT dv/dt Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 100 °C @VR = 4V, TC = 25 °C fSIG = 1MHz - Max. 0.70 0.57 1.0 40 Units V V mA mA 500 pF 10,000 V/μs Specification -55 to +150 -55 to +150 Units °C °C Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg Condition - RθJC DC operation 1.6 °C/W RθJA DC operation 50 °C/W wt 2/1.85 TO-220AB /D2PAK /TO-262 g • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - Green Products Reverse Current-IR(MA) 100 1000 TJ=25℃ 100 D 10 10 TJ=125℃ 1 0.1 0.01 TJ=25℃ 0.001 0 5 10 15 20 25 30 35 40 10 20 Reverse Voltage-VR(V) 30 40 50 60 70 80 90 Reverse Voltage-VR(%) Fig.1-Typical Junction Capacitance Instantaneous Forward CurrentIF(A) Junction Capacitance-CT(PF) 10000 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop-VF(V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0013, Rev. - MBR3035 /3045CT MBRB3035 /3045CT MBR3035 /3045CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •