LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1 LBSS123LT1 FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Shipping SA 3000/Tape&Reel SA (Pb-Free) 3000/Tape&Reel SA 10000/Tape&Reel SA (Pb-Free) 10000/Tape&Reel LBSS123LT1 LBSS123LT1G LBSS123LT3 LBSS123LT3G SOT-23 Marking 1 Gate MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ±20 ±40 Vdc Vpk ID IDM 0.17 0.68 Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg –55 to +150 °C Drain Current Continuous (Note 1.) Pulsed (Note 2.) Drain 3 2 Source Adc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR–5 = 1.0 0.75 0.062 in. LBSS123LT1–1/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 100 – – Vdc – – – – 15 60 OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) µAdc Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C TJ = 125°C IDSS Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS – – 50 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.8 – 2.8 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 100 mAdc) rDS(on) – 5.0 6.0 Ω gfs 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 20 – pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 9.0 – pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 4.0 – pF td(on) – 20 – ns td(off) – 40 – ns VSD – – 1.3 V ON CHARACTERISTICS (Note 4.) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS(4) Turn–On Delay Time Turn–Off Delay Time (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 Ω) REVERSE DIODE Diode Forward On–Voltage (ID = 0.34 Adc, VGS = 0 Vdc) 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. LBSS123LT1–2/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 VGS = 10 V 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 9.0 0.8 125°C 0.6 0.4 0.2 0 10 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -ā55°C +ā100 Figure 3. Temperature versus Static Drain–Source On–Resistance +ā140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 Figure 4. Temperature versus Gate Threshold Voltage LBSS123LT1–3/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. Gate 2. Source 3. Drain 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LBSS123LT1–4/4