MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 42 2 3 4 37 30 2-R1.5 1 5 6 PIN: 1 Pin : RF INPUT 2 VDD1 : 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2 : 2nd DRAIN BIAS SUPPLY 5 PO : RF OUTPUT 6 GND: FIN 9.6 14.7 19.7 27.4 32.4 H15 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω f=820-851MHz, ZG=ZL=50Ω Ratings 17 4 10 10 -30 to +100 -40 to +100 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f Parameter Test conditions Frequency range Limits Min 820 Max 851 PO Output power VDD=12.5V, VGG=3.5V, Pin=1mW, ZG=ZL=50Ω 2fO ρin ηT 2nd. harmonic Input VSWR Total efficiency PO=6W(VGG=Adjust), VDD=12.5V, Pin=1mW(CW), ZG=ZL=50Ω Stability ZG=ZL=50Ω, VDD=10-16V, Load VSWR <4:1 No parasitic oscillation Load VSWR tolerance VDD=15.2V, Pin=1mW, PO=6W (VGG Adjust), ZL=20:1 No degradation or destroy 6 Unit MHz W -30 4 33 dBc % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 50 ηT 9 8 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT 40 PO 7 PO 10.0 6 10.0 30 5 VDD1=12.5V 4 VDD2=12.5V VGG=3.4V 3 Pin=1mW 2 ZG=ZL=50 Ω 20 1.0 ρin f=820MHz VDD1=12.5V VDD2=12.5V VGG=3.5V ZG=ZL=50Ω 10 1 0 0 800 810 820 830 840 850 860 870 0.1 0.01 0.10 FREQUENCY f (MHz) PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 f=820MHz 9 VDD1=12.5V PO 8 VDD2=12.5V Pin=1mW 7 ZG=ZL=50 Ω 6 5 1.0 f=851MHz VDD1=12.5V VDD2=12.5V VGG=3.5V ZG=ZL=50Ω 0.1 0.01 0.10 1.0 0.1 10.00 1.00 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 f=851MHz 9 VDD1=12.5V 8 VDD2=12.5V PO Pin=1mW 7 ZG=ZL=50 Ω 100 90 70 60 5 50 50 ηT 2 20 1 10 0 2.00 0 2.50 3.00 3.50 4.00 2.25 2.75 3.25 3.75 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 12 60 10 50 30 4 2 20 1 10 0 4.00 ηT 8 3 2.25 2.75 3.25 3.75 GATE SUPPLY VOLTAGE VGG (V) 60 30 6 3.50 70 40 40 3.00 80 3 4 2.50 90 80 6 ηT 100 4 INPUT POWER Pin (mW) 0 2.00 0.1 10.00 1.00 INPUT POWER Pin (mW) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 ηT 10.0 1.0 40 30 PO f=820MHz VGG=3.5V Pin=1mW ZG=ZL=50Ω 2 0 4 6 8 10 12 14 20 10 0 16 DRAIN SUPPLY VOLTAGE VDD (V) Nov. ´97 MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 12 60 10 50 ηT 8 40 6 30 4 PO f=851MHz VGG=3.5V Pin=1mW ZG=ZL=50Ω 2 0 4 6 8 10 12 14 20 10 0 16 DRAIN SUPPLY VOLTAGE VDD (V) Nov. ´97