BCX51...BCX53 PNP Silicon AF Transistors • For AF driver and output stages 1 • High collector current 2 • Low collector-emitter saturation voltage 3 • Complementary types: BCX54...BCX56 (NPN) 2 VPS05162 Type Marking Pin Configuration BCX51 AA 1=B 2=C 3=E SOT89 BCX51-10 AC 1=B 2=C 3=E SOT89 BCX51-16 AD 1=B 2=C 3=E SOT89 BCX52 AE 1=B 2=C 3=E SOT89 BCX52-10 AG 1=B 2=C 3=E SOT89 BCX52-16 AM 1=B 2=C 3=E SOT89 BCX53 AH 1=B 2=C 3=E SOT89 BCX53-10 AK 1=B 2=C 3=E SOT89 BCX53-16 AL 1=B 2=C 3=E SOT89 1 Package Feb-10-2004 BCX51...BCX53 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-base voltage BCX51 Unit BCX52 BCX53 45 60 80 VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 130 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg 1 V A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS ≤20 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Feb-10-2004 BCX51...BCX53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCX51 45 - - BCX52 60 - - BCX53 80 - - BCX51 45 - - BCX52 60 - - BCX53 100 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 µA h FE 25 - - BCX51...53 40 - 250 hFE-grp.10 63 100 160 hFE-grp.16 100 160 250 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 125 - Collector-base breakdown voltage IC = 100 µA, IE = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) - IC = 5 mA, VCE = 2 V h FE DC current gain 1) IC = 150 mA, VCE = 2 V DC current gain 1) h FE IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤ 300µs, D = 2% 3 Feb-10-2004 BCX51...BCX53 Total power dissipation Ptot = f(TS) Collector current IC = f (VBE) VCE = 2V 1.2 10 4 W EHP00437 mA 1 Ptot BCX 51...53 ΙC 0.9 10 3 0.8 5 100 ˚C 25 ˚C -50 ˚C 0.7 0.6 10 2 0.5 5 0.4 1 0.3 10 0.2 5 0.1 0 0 20 40 60 80 120 °C 100 10 0 150 0 0.2 0.4 0.8 0.6 TS VBE Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp) VCE = 10V 10 3 BCX 51...53 EHP00438 Ptot max 5 Ptot DC 10 3 fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 BCX 51...53 EHP00439 MHz tp tp D= T 1.0 V 1.2 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 10 3 ΙC tp 4 Feb-10-2004 BCX51...BCX53 DC current gain hFE = f (I C) Collector-emitter saturation voltage VCE = 2V IC = f (VCEsat), hFE = 10 10 3 BCX 51...53 EHP00440 10 4 BCX 51...53 EHP00441 mA 5 ΙC h FE 10 2 10 100 ˚C 25 ˚C 3 5 -50 ˚C 100 ˚C 25 ˚C -50 ˚C 5 10 2 5 10 1 10 5 1 5 10 0 10 0 5 10 2 5 10 1 5 10 3 10 mA 10 4 0 0 0.2 0.4 0.6 ΙC Base-emitter saturation voltage VCB = 30V IC = f (VBEsat), hFE = 10 Ι CB0 BCX 51...53 0.8 VCE sat Collector cutoff current ICBO = f (TA) 10 4 nA V EHP00442 10 4 BCX 51...53 EHP00443 mA ΙC max 10 3 10 3 5 5 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 typ 10 1 5 5 10 10 0 1 5 5 10 -1 10 0 0 50 100 ˚C 150 0 0.2 0.4 0.6 0.8 1.0 V 1.2 VBE sat TA 5 Feb-10-2004