ON NRVBD650CTT4G Switchmode power rectifier Datasheet

MBRD620CTG Series,
NRVBD640CTG Series
SWITCHMODE
Power Rectifiers
DPAK−3 Surface Mount Package
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These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
•
•
•
•
•
Extremely Fast Switching
Extremely Low Forward Drop
Platinum Barrier with Avalanche Guardrings
NRVBD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
•
DPAK
CASE 369C
1
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
SCHOTTKY BARRIER
RECTIFIERS
6.0 AMPERES, 20 − 60 VOLTS
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
4
3
MARKING DIAGRAM
YWW
B
6x0TG
Y
WW
B6x0T
x
G
= Year
= Work Week
= Device Code
= 2, 3, 4, 5, or 6
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 10
1
Publication Order Number:
MBRD620CT/D
MBRD620CTG Series, NRVBD640CTG Series
MAXIMUM RATINGS
MBRD/NRVBD/SBR
Symbol
620CT
630CT
640CT
650CT
660CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
50
60
V
Average Rectified Forward Current
TC = 130°C (Rated VR)
Per Diode
Per Device
IF(AV)
Peak Repetitive Forward Current,
TC = 130°C (Rated VR, Square Wave, 20 kHz)
Per Diode
IFRM
Nonrepetitive Peak Surge Current − (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
IFSM
75
A
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
IRRM
1
A
TJ
−65 to +175
°C
Storage Temperature
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Rating
A
3
6
A
6
Operating Junction Temperature (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
6
°C/W
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
80
°C/W
Symbol
Value
Unit
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
iF = 3 Amps, TC = 25°C
iF = 3 Amps, TC = 125°C
iF = 6 Amps, TC = 25°C
iF = 6 Amps, TC = 125°C
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TC = 25°C)
(Rated dc Voltage, TC = 125°C)
iR
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
0.7
0.65
0.9
0.85
0.1
15
V
mA
MBRD620CTG Series, NRVBD640CTG Series
TYPICAL CHARACTERISTICS
1000
70
100
I R , REVERSE CURRENT (mA)
100
50
30
150°C
10
125°C
1.0
75°C
0.1
0.01
10
0.001
7.0
0.0001
25°C
0
40
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
10
5.0
3.0
Figure 2. Typical Reverse Current,* Per Leg
150°C
2.0
125°C
1.0
0.7
0.5
0.3
0.2
75°C
TC = 25°C
0.1
0
0.2
70
60
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
175°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
20
TJ = 175°C
0.4
0.6
0.8
1.0
1.2
1.4
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
SINE
WAVE
5
10
IPK/IAV = 20
SQUARE
WAVE
dc
TJ = 150°C
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage, Per Leg
Figure 3. Average Power Dissipation, Per Leg
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3
10
MBRD620CTG Series, NRVBD640CTG Series
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISTICS
8.0
RATED VOLTAGE APPLIED
7.0
RqJC = 6°C/W
6.0
TJ = 150°C
5.0
SINE
WAVE
OR
SQUARE
WAVE
4.0
3.0
dc
2.0
1.0
0
80
90
100
110
120
140
130
150
160
TC, CASE TEMPERATURE (°C)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating, Case, Per Leg
4.0
RqJA = 80°C/W
SURFACE MOUNTED ON MIN.
PAD SIZE RECOMMENDED
TJ = 150°C
3.5
3.0
dc
SQUARE WAVE
OR
SINE WAVE
2.5
VR = 25 V
2.0
1.5
VR = 60 V
1.0
0.5
0
0
20
40
60
100
80
120
140
160
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient, Per Leg
C, CAPACITANCE (pF)
1K
TJ = 25°C
100
10
0
10
20
30
40
50
60
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance, Per Leg
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4
70
MBRD620CTG Series, NRVBD640CTG Series
ORDERING INFORMATION
Device
Package
Shipping†
MBRD620CTT4G
2500 / Tape & Reel
MBRD630CTT4G
2500 / Tape & Reel
MBRD640CTG
75 Units / Rail
NRVBD640CTG
75 Units / Rail
MBRD640CTT4G
2500 / Tape & Reel
NRVBD640CTT4G
2500 / Tape & Reel
MBRD650CTG
MBRD650CTT4G
DPAK
(Pb−Free)
NRVBD650CTT4G
75 Units / Rail
2500 / Tape & Reel
2500 / Tape & Reel
MBRD660CTG
75 Units / Rail
NRVBD660CTG
75 Units / Rail
MBRD660CTRLG
1800 / Tape & Reel
MBRD660CTT4G
2500 / Tape & Reel
NRVBD660CTT4G
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MBRD620CTG Series, NRVBD640CTG Series
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRD620CT/D
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