APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • D 30V/60A, D D RDS(ON) =7.5mΩ (typ.) @ VGS = 10V D S RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design G Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) DD D D Applications • G Power Management in Notebook Computer, or Decktop Computer. S S S N-Channel MOSFET Ordering and Marking Information Package Code KP : KPAK Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4350 Lead Free Code Handling Code Temp. Range Package Code APM4350 KP : XXXXX - Date Code APM4350 XXXXX Note: ANPEC lead-free products contain molding compounds 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM4350KP Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 140 TC=100°C 80 TC=25°C 60 TC=100°C 35 TC=25°C 50 TC=100°C 20 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested V A Mounted on Large Heat Sink ID PD RθJC Continuous Drain Current Maximum Power Dissipation 2.5 Thermal Resistance-Junction to Case A W °C/W 2 Mounted on PCB of 1in pad area ID PD RθJA Continuous Drain Current Maximum Power Dissipation TA=25°C 13.5 TA=100°C 8.5 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A W °C/W Mounted on PCB of Minimum Footprint ID PD RθJA Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 TA=25°C 10 TA=100°°C 6 TA=25°C 1.5 TA=100°C 0.5 75 A W °C/W www.anpec.com.tw APM4350KP Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA APM4350KP Min. Typ. IGSS a 1 VDS=VGS, IDS=250µA 30 Gate Leakage Current VGS=±20V, VDS=0V 1.3 Unit V VDS=24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance Max. 30 Tj=85°C VGS(th) RDS(ON) (TA = 25°C Unless Otherwise Noted) 1.8 µA 2.5 V ±100 nA VGS=10V, IDS=30A 7.5 9 VGS=4.5V, IDS=15A 11.5 14.5 ISD=15A, VGS=0V 0.75 1.1 mΩ Diode Characteristics a VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Gate Charge Characteristics Qg Total Gate Charge IDS=15A, dlSD/dt=100A/µs V 11 ns 3 nC b Qgs Gate-Source Charge Qgd Gate-Drain Charge 28 VDS=15V, VGS=10V, IDS=30A 39 nC 4 9 b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Ω 1.6 1660 pF 260 170 18 33 15 28 47 86 22 41 ns Note： a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM4350KP Typical Characteristics Drain Current Power Dissipation 70 60 60 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 10 50 40 30 20 10 o o 0 TC=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance ID - Drain Current (A) 20 Tj - Junction Temperature (°C) it im )L n o s( Rd 1ms 10ms 10 100ms 1s DC 1 o TC=25 C 0.1 0.1 0 Tj - Junction Temperature (°C) 400 100 TC=25 C,VG=10V 1 10 1 Duty = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 2 Single Pulse 0.01 1E-4 80 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 1E-3 0.01 Mounted on 1in pad o RθJA :50 C/W 0.1 1 10 100 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 120 20 VGS= 6,7,8,9,10V 5V 5.5V 18 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 100 4.5V 80 60 4V 40 3.5V 20 0.5 1.0 1.5 2.0 2.5 12 10 VGS=10V 8 6 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.8 ID=30A 120 IDS =250µA 1.6 Normalized Threshold Voltage 16 RDS(ON) - On - Resistance (mΩ) 14 2 3.0 18 14 12 10 8 6 4 VGS=4.5V 4 3V 0 0.0 16 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1 2 3 4 5 6 7 8 9 0.0 -50 -25 10 VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4350KP Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 1.6 1.4 IS - Source Current (A) Normalized On Resistance 100 VGS = 10V IDS = 30A 1.2 1.0 0.8 0.6 0.4 0.2 o 10 Tj=150 C o Tj=25 C 1 o RON@Tj=25 C: 7.5mΩ 0.0 -50 -25 0 25 50 0.2 0.0 75 100 125 150 0.3 0.6 0.9 1.2 1.5 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 2500 1.8 10 Frequency=1MHz VDS= 15V VGS - Gate - source Voltage (V) IDS= 30A C - Capacitance (pF) 2000 Ciss 1500 1000 500 Coss 8 6 4 2 Crss 0 0 5 10 15 20 25 0 0 30 10 15 20 25 30 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 5 6 www.anpec.com.tw APM4350KP Avalanche Test Circuit and Waveforms VDS L DUT RG VDD IL tp 0.01Ω Switching Time Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% VGS tp td(on) tr Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 td(off) tf www.anpec.com.tw APM4350KP Packaging Information KPAP (Reference JEDEC Registration MS-012) 7 6 5 1 2 3 4 8 7 6 5 1 2 3 4 G1 G K E E1 H F1 F 8 D e Dim A B C D E E1 e F F1 G G1 H K a B C A a Millimeters Min. Max. 1.00 1.20 0.38 0.51 0.19 0.25 4.80 5.00 5.90 6.10 5.696 5.796 1.27 BSC 0.052 0.152 0.352 0.452 0.052 0.152 0.352 0.452 3.491 3.691 1.60 0° 12° Inches Min. Max. 0.039 0.047 0.015 0.020 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.050 BSC 0.002 0.006 0.014 0.018 0.002 0.006 0.014 0.018 0.137 0.145 0.063 0° 12° Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb,100%Sn). Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 8 www.anpec.com.tw APM4350KP Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone TL to TP Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25° C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 3°C/second max 183°C 60-150 seconds 217°C 60-150 seconds 225 +0/-5°C 240 +0/-5°C 245 +0/-5°C 250 +0/-5°C 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds Time 25°C to Peak Temperature 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM4350KP Package Refolw Conditions pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0° C pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and pkg. 3 volume < 350mm Convection 235 +5/-0° C VPR 215-219° C VPR 235 +5/-0° C IR/Convection 220 +5/-0° C IR/Convection 220 +5/-0° C Reliability test program Test Item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw APM4350KP Carrier Tape & Reel Dimensions(Cont.) Application A B C J T1 T2 W P E 330±1 62+1.5 2±0.5 12.4±0.2 2±0.2 12±0. 3 8±0.1 1.75±0.1 F D 12.75+ 0.15 D1 Po P1 Ao Bo Ko t 4.0±0.1 2.0±0.1 6.4±0.1 5.2±0. 1 SOP- 8 5.5±1 1.55+0.1 1.55+0.25 2.1±0.1 0.3±0.013 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP-8 12 9.3 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw