ON MBRJ30H60CTG Switchmode power rectifier Datasheet

MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
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SWITCHMODE
Power Rectifier
60 V, 30 A
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES, 60 VOLTS
1
Features and Benefits









2, 4
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175C Operating Junction Temperature
30 A Total (15 A Per Diode Leg)
Guard−Ring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These are Pb−Free Devices*
Applications
 Power Supply − Output Rectification
 Power Management
 Instrumentation
3
4
4
12
3
1
I2PAK (TO−262)
CASE 418D
PLASTIC
STYLE 3
2
3
TO−220
CASE 221A
PLASTIC
STYLE 6
Mechanical Characteristics:
 Case: Epoxy, Molded
 Epoxy Meets UL 94 V−0 @ 0.125 in
 Weight (Approximately): 1.5 Grams (I2PAK)


Weight (Approximately): 1.7 Grams (D2PAK)
Weight (Approximately): 1.9 Grams (TO−220 and TO−220FP)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
TO−220
CASE 221D
STYLE 3
TO−220
CASE 221AH
D2PAK
CASE 418B
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 10
1
ORDERING AND MARKING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
MBRB30H60CT/D
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC = 159C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
15
30
260
A
A
A
Operating Junction Temperature (Note 1)
TJ
−55 to +175
C
Storage Temperature
Tstg
*55 to +175
C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
350
mJ
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Thermal Resistance
(MBRB30H60CT−1G and MBR30H60CTG)
Junction−to−Case
Junction−to−Ambient
(MBRF30H60CTG and MBRJ30H60CTG)
Junction−to−Case
(MBRB30H60CTT4G and NRVBB30H60CTT4G)
Junction−to−Case
Value
Unit
C/W
RqJC
RqJA
2.0
70
RqJC
4.4
RqJC
1.6
Symbol
Value
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 15 A, TC = 25C)
(IF = 15 A, TC = 125C)
(IF = 30 A, TC = 25C)
(IF = 30 A, TC = 125C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25C)
(Rated DC Voltage, TC = 125C)
iR
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.
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2
0.62
0.56
0.78
0.71
0.3
45
Unit
V
mA
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
100
TJ = 125C
10
TJ = 25C
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
TJ = 125C
10
TJ = 25C
1
0.1
0
0.2
0.4
Figure 1. Typical Forward Voltage
IR, MAXIMUM REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
1.0E−02
TJ = 125C
TJ = 125C
1.0E−03
1.0E−03
1.0E−04
1.0E−04
TJ = 25C
1.0E−05
1.0E−06
0
20
10
30
TJ = 25C
1.0E−05
40
50
60
1.0E−06
0
10
VR, REVERSE VOLTAGE (V)
PFO, AVERAGE POWER DISSIPATION
(W)
dc
SQUARE WAVE
15
10
5
110
120
130
140
150
160
30
40
50
60
Figure 4. Maximum Reverse Current
30
25
20
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
IF, AVERAGE FORWARD CURRENT (A)
1.2
1.0E−01
1.0E−02
0
100
1.0
0.8
Figure 2. Maximum Forward Voltage
1.0E−01
20
0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
170
180
20
18
16
14
SQUARE
12
10
DC
8
6
4
2
0
0
5
10
15
20
TC, CASE TEMPERATURE (C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating for
MBRB30H60CT−1G, MBR30H60CTG,
MBRB30H60CTT4G and NRVBB30H60CTT4G
Figure 6. Forward Power Dissipation
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3
25
R(t), TRANSIENT THERMAL RESISTANCE
30
10,000
20
TJ = 25C
dc
25
C, CAPACITANCE (pF)
IF, AVERAGE FORWARD CURRENT (A)
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
SQUARE WAVE
15
10
5
0
100
110
120
130
140
150
160
170
180
1000
100
0
20
10
40
30
50
TC, CASE TEMPERATURE (C)
VR, REVERSE VOLTAGE (V)
Figure 8. Current Derating for
MBRF30H60CTG and MBRJ30H60CTG
Figure 7. Capacitance
60
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response Junction−to−Case for MBRB30H60CT−1G, MBR30H60CTG,
MBRB30H60CTT4G and NVRBB30H60CTT4G
10
D = 0.5
1
0.1
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
t1, TIME (sec)
Figure 10. Thermal Response Junction−to−Case for MBRF30H60CTG and MBRJ30H60CTG
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4
1000
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 11. Test Circuit
t1
t2
t
Figure 12. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 11 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
BV
V
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
MARKING DIAGRAMS
AYWW
B30H60G
AKA
AYWW
B30H60G
AKA
AYWW
B30H60G
AKA
I2PAK (TO−262)
TO−220
TO−220FP
B30H60
A
Y
WW
G
AKA
AYWW
B30H60G
AKA
D2PAK
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Package
Shipping†
MBRB30H60CT−1G
TO−262
(Pb−Free)
50 Units / Rail
MBR30H60CTG
TO−220
(Pb−Free)
50 Units / Rail
MBRF30H60CTG
TO−220FP
(Pb−Free)
50 Units / Rail
MBRB30H60CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NRVBB30H60CTT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
TO−220FP
(Pb−Free, Halogen Free)
50 Units / Rail
Device
MBRJ30H60CTG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D−01
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
STYLE 3:
PIN 1.
2.
3.
4.
H
M
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
STYLE 6:
PIN 1.
2.
3.
4.
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7
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
J
G
D
M
T B
M
N
R
P
U
L
M
W
H
3 PL
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
8
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
Y
M
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE B
A
E
B
P
E/2
0.14
M
B A
M
SEATING
PLANE
A
H1
A1
4
Q
D
C
NOTE 3
1 2 3
L
L1
3X
3X
b2
c
b
0.25
M
B A
M
C
A2
e
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9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
DIM
A
A1
A2
b
b2
c
D
E
e
H1
L
L1
P
Q
MILLIMETERS
MIN
MAX
4.30
4.70
2.50
2.90
2.50
2.70
0.54
0.84
1.10
1.40
0.49
0.79
14.70
15.30
9.70
10.30
2.54 BSC
6.70
7.10
12.70
14.73
--2.80
3.00
3.40
2.80
3.20
MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G,
NRVBB30H60CTT4G, MBRJ30H60CTG
FULLPAK is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBRB30H60CT/D