DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D123 BFG505W; BFG505W/X NPN 9 GHz wideband transistors Product specification Supersedes data of August 1995 1998 Oct 02 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X FEATURES PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG505W • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS BFG505W/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV). handbook, halfpage 4 3 1 2 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. MARKING Top view TYPE NUMBER MBK523 CODE BFG505W N0 BFG505W/X N1 Fig.1 Simplified outline SOT343N. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO collector-base voltage open emitter VCES collector-emitter voltage RBE = 0 MIN. TYP. MAX. UNIT − − 20 V − − 15 V IC collector current (DC) − − 18 mA Ptot total power dissipation Ts ≤ 85 °C − − 500 mW hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.2 − fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C − 9 − GHz GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB 12 − dB IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C pF |S21|2 insertion power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB F noise figure Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz − 1.9 − dB 1998 Oct 02 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE = 0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 18 mA Ptot total power dissipation Ts ≤ 85 °C; see Fig.2; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG248 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 o 200 T s ( C) Fig.2 Power derating curve. 1998 Oct 02 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage CONDITIONS IC = 2.5 µA ; IE = 0 MIN. TYP. MAX. UNIT 20 − − V V(BR)CES collector-emitter breakdown voltage IC = 10 µA; RBE = 0 15 − − V V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 2.5 − − V ICBO collector leakage current VCB = 6 V; IE = 0 − − 50 nA hFE DC current gain IC = 5 mA; VCE = 6 V see Fig.3 60 120 250 fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 °C; see Fig.5 − 9 − GHz Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 0.4 − pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz; see Fig.4 − 0.2 − pF GUM maximum unilateral power gain; note 1 IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C − 19 − dB IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 °C − 12 − dB |S21|2 insertion power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 °C 15 16 − dB F noise figure Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 900 MHz − 1.2 1.7 dB Γs = Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz − 1.6 2.1 dB Γs = Γopt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz − 1.9 − dB PL1 output power at 1 dB gain compression IC = 5 mA; VCE = 6 V; f = 900 MHz; RL = 50 Ω; Tamb = 25 °C − 4 − dBm ITO third order intercept point note 2 − 10 − dBm Notes S 21 2 dB. 1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 ) 2. IC = 5 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz; measured at 2fp − fq = 898 MHz and 2fq − fp = 904 MHz. 1998 Oct 02 4 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X MRA639 250 MLC032 0.4 handbook, halfpage handbook, halfpage C re (pF) hFE 200 0.3 150 0.2 100 0.1 50 0 10−3 10−2 10−1 1 10 0 102 IC (mA) 0 VCE = 6 V. Fig.3 2 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.4 MLC033 12 handbook, halfpage fT (GHz) VCE = 6 V VCE = 3 V 8 4 0 10 1 1 10 I C (mA) 10 2 f = 1 GHz; Tamb = 25 °C. Fig.5 1998 Oct 02 Transition frequency as a function of collector current; typical values. 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X MLC034 30 MLC035 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG G UM 20 20 G max MSG 10 0 G UM 10 0 4 8 10 I C (mA) 0 12 f = 900 MHz; VCE = 6 V. Fig.6 Gain as a function of collector current; typical values. Fig.7 MLC036 50 8 10 I C (mA) 12 Gain as a function of collector current; typical values. MLC037 50 handbook, halfpage gain G UM (dB) 4 f = 2 GHz; VCE = 6 V. handbook, halfpage gain 0 G UM (dB) 40 40 30 30 MSG MSG 20 20 10 10 0 G max 0 102 10 103 f (MHz) 104 IC = 1.25 mA; VCE = 6 V. Fig.8 1998 Oct 02 102 10 103 f (MHz) 104 IC = 5 mA; VCE = 6 V. Gain as a function of frequency; typical values. Fig.9 6 Gain as a function of frequency; typical values. Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X MLC038 4 MRA650 5 handbook, halfpage handbook, halfpage Fmin F (dB) f = 900 MHz (dB) 4 Gass 3 2 f = 2000 MHz 1 1000 MHz 900 MHz 500 MHz 2 1 I C (mA) VCE = 6 V. 10 5 Fmin 1000 MHz 900 MHz 500 MHz 0 10−1 10 2000 MHz 2000 MHz 1 0 10 1 (dB) 15 1000 MHz 3 20 Gass 0 1 IC (mA) −5 10 VCE = 6 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Associated available gain as a function of collector current; typical values. MLC039 4 MRA651 5 handbook, halfpageIC = 1.25 mA handbook, halfpage 5 mA Fmin F (dB) (dB) 4 20 Gass (dB) 15 Gass 3 3 10 2 5 2 I C = 5 mA 1 5 mA 1.25 mA 1 Fmin 0 1.25 mA 0 10 2 10 3 f (MHz) 0 102 10 4 VCE = 6 V. f (MHz) −5 104 VCE = 6 V. Fig.12 Minimum noise figure as a function of frequency; typical values. 1998 Oct 02 103 Fig.13 Associated available gain as a function of frequency; typical values. 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistors pot. unst. region handbook, full pagewidth BFG505W; BFG505W/X 90° 1.0 1 135° 0.8 45° 2 0.5 0.6 stability 0.2 circle 180° Fmin = 1. 2 dB 0.2 0 0.5 ΓOPT F = 1.5 dB 2 5 1 0.4 5 0.2 0° 0 F = 2 dB F = 3 dB 0.2 5 0.5 −135° 2 −45° 1 MRA652 1.0 −90° f = 900 MHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω. Fig.14 Common emitter noise figure circles; typical values. handbook, full pagewidth 90° pot. unst. region 1.0 1 135° 0.8 45° 2 0.5 0.6 ΓOPT 0.2 stability circle 180° 0.4 5 Fmin = 1. 9 dB 0.2 0.2 0 0.5 F = 2.5 dB 1 2 5 0° 0 F = 3 dB F = 4 dB 5 0.2 −135° 0.5 2 −45° 1 MRA653 f = 2 GHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 Ω. −90° Fig.15 Common emitter noise figure circles; typical values. 1998 Oct 02 8 1.0 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 3 GHz 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLC040 1.0 90 o VCE = 6 V; IC = 5 mA; Zo = 50 Ω. Fig.16 Common emitter input reflection coefficient (S11); typical values. 90 o handbook, full pagewidth 135 o 180 o 45 o 40 MHz 15 12 9 3 GHz 6 0o 3 135 o 45 o 90 o MLC041 VCE = 6 V; IC = 5 mA. Fig.17 Common emitter forward transmission coefficient (S21); typical values. 1998 Oct 02 9 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X 90 o handbook, full pagewidth 135 o 45 o 3 GHz 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLC042 VCE = 6 ; IC = 5 mA. Fig.18 Common emitter reverse transmission coefficient (S12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLC043 VCE = 6 V; IC = 5 mA; Zo = 50 Ω. 1.0 90 o Fig.19 Common emitter output reflection coefficient (S22); typical values. 1998 Oct 02 10 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X SPICE parameters for the BFG505W(/X) die SEQUENCE No. PARAMETER VALUE SEQUENCE No. UNIT PARAMETER VALUE (1) UNIT 1 IS 134.1 aA 36 VJS 750.0 mV 2 BF 180.0 − 37 (1) MJS 0.000 − 3 NF 0.988 − 38 FC 0.897 − 4 VAF 38.34 V Note 5 IKF 150.0 mA 6 ISE 27.81 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.051 − 8 BR 55.19 − 9 NR 0.982 − 10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062 − 14 RB 20.00 Ω 15 IRB 1.000 µA 16 RBM 20.00 Ω 17 RE 1.171 Ω 18 RC 4.350 Ω C cb handbook, halfpage L1 LB B L2 B' C be C' C E' Cce LE MBC964 L3 XTB 0.000 − (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303 − 25 TF 7.037 ps 26 XTF 12.34 − 27 VTF 1.701 V 28 ITF 30.64 mA Cbe 70 29 PTF 0.000 deg Ccb 50 fF 115 fF 19 (1) 20 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.20 Package equivalent circuit SOT343N. List of components (see Fig.20) DESIGNATION VALUE UNIT fF 30 CJC 242.4 fF Cce 31 VJC 188.6 mV L1 0.34 nH 32 MJC 0.041 − L2 0.10 nH 33 XCJC 0.130 − L3 0.25 nH 34 TR 1.332 ns LB 0.40 nH 35 (1) CJS 0.000 F LE 0.40 nH 1998 Oct 02 11 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343N 1998 Oct 02 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505W; BFG505W/X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125104/00/03/pp16 Date of release: 1998 Oct 02 Document order number: 9397 750 04345