MBR1535CT- MBR1560CT MBR1535CT - MBR1560CT Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guarding for over voltage protection. PIN 1 + CASE PIN 2 PIN 3 1 2 3 TO-220AB Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter Units 1535 1545 1550 1560 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 105°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 150 A -65 to +175 °C Operating Junction Temperature -65 to +150 °C Value Units IFSM Tstg TJ 15 V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD Power Dissipation 41.7 W RθJA Thermal Resistance, Junction to Ambient 60 °C/W RθJL Thermal Resistance, Junction to Lead 3.0 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 1535 VF IR IRRM Forward Voltage IF = 7.5 A, TC = 25°C IF = 7.5 A, TC = 125°C IF = 15 A, TC = 25°C IF = 15 A, TC = 125°C Reverse Current @ rated VR TA = 25°C TA = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 1545 Units 1550 1560 0.57 0.84 0.72 0.75 0.65 - V V V V 0.1 15 1.0 50 mA mA 1.0 0.5 A MBR1535CT - MBR1560CT, Rev. C (continued) 25 20 15 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 10 5 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 50 0 1 2 5 10 20 Number of Cycles at 60Hz 50 100 T A = 125 º C 10 10 TA = 25º C Reverse Current, IR [mA] Forward Current, IF [A] 100 50 T A = 125 ºC MBR1535CT-MBR1545CT 1 MBR1550CT-MBR1560CT 0.1 µS Pulse Width = 300µ 2% Duty Cycle 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] MBR1550CT-MBR1560CT 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation MBR1550CT-MBR1560CT 0.1 TA = 75º C TA = 25º C MBR1535CT-MBR1545CT 0.01 100 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [ºC/W] MBR1535CT-MBR1545CT 100 10 0.1 1 0.001 1.2 5000 1000 MBR1535CT-MBR1545CT MBR1550CT-MBR1560CT 1 Figure 3. Forward Voltage Characteristics Total Capacitance, CT [pF] 150 Figure 2. Non-Repetitive Surge Current 50 0.01 200 100 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR1535CT - MBR1560CT, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4