ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB® Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications Case Style 1.5KE PRIMARY CHARACTERISTICS VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 175 °C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional types, use C suffix (e.g. ICTE18C). Electrical characteristics apply in both directions. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the color band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Maximum instantaneous forward voltage at 100 A for uni-directional only Operating junction and storage temperature range SYMBOL LIMIT UNIT PPPM 1500 W IPPM See next table A PD 6.5 W IFSM 200 A VF 3.5 V TJ, TSTG - 55 to + 175 °C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 (2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum Document Number: 88356 Revision: 07-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted) STAND-OFF VOLTAGE VWM (V) MINIMUM BREAKDOWN VOLTAGE AT 1.0 mA VBR (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (μA) MAXIMUM CLAMPING VOLTAGE AT IPP = 1.0 A VC (V) MAXIMUM CLAMPING VOLTAGE AT IPP = 10 A VC (V) MAXIMUM PEAK PULSE CURRENT IPP (A) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160 1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100 1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90 1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70 1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60 1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50 JEDEC TYPE NUMBER GENERAL SEMICONDUCTOR PART NUMBER UNI-DIRECTIONAL TYPES 1N6373 (2) BI-DIRECTIONAL TYPES 1N6382 ICTE8C 8.0 9.4 50.0 11.4 11.6 100 1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90 1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70 1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60 1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50 Notes (1) “C” suffix indicates bi-directional (2) ICTE5 and 1N6373 are not available as bi-directional (3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR (breakdown voltage) as measured on a specific device ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE ICTE5-E3/54 0.968 54 1400 13" diameter paper tape and reel ICTE5HE3/54 (1) 0.968 54 1400 13" diameter paper tape and reel Note (1) Automotive grade www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88356 Revision: 07-May-10 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 000 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 10 1 Measured at Zero Bias 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Measured at Stand-Off Voltage VWM 1000 0.1 1.0 μs 10 μs 100 μs 1.0 ms 100 10 ms 10 1.0 100 VBR - Breakdown Voltage (V) Figure 1. Peak Pulse Power Rating Curve Figure 4. Typical Junction Capacitance Uni-Directional 100 000 100 75 50 25 Measured at Zero Bias Bi-Directional Type Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 000 1000 Measured at Stand-Off Voltage VWM 100 0 0 25 50 75 100 125 150 175 1.0 200 10 100 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 5. Typical Junction Capacitance 150 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 μs Peak Value IPPM 100 IFSM - Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 200 td - Pulse Width (s) CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 0.1 μs Half Value - IPP IPPM 2 50 10/1000 μs Waveform as defined by R.E.A. td 0 200 200 TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 10 0 1.0 2.0 3.0 4.0 1 5 10 50 100 t - Time (ms) Number of Cycles at 60 Hz Figure 3. Pulse Waveform Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Only Document Number: 88356 Revision: 07-May-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor 8.0 Uni-Directional Only TA = 25 °C PD - Power Dissipation (W) 7.0 ICTE18 ICTE15 ICTE12 ICTE10 ICTE8 10 ICTE5 IPP - Peak Pulse Current (A) 50 6.0 5.0 4.0 3.0 L = 0.375" (9.5 mm) Lead Lengths 2.0 1.0 1 0 6 8 10 12 14 16 18 20 22 24 26 28 0 25 50 75 100 125 150 175 VC - Clamping Voltage (V) TL - Lead Temperature (°C) Figure 7. Typical Characteristics Clamping Voltage Figure 8. Power Derating Curve 200 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style 1.5KE 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.042 (1.07) 0.038 (0.96) DIA. www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 88356 Revision: 07-May-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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