MGSF1N03L, MVGSF1N03L Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. http://onsemi.com V(BR)DSS Features • • • • RDS(on) TYP 80 mW @ 10 V 30 V Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT−23 Surface Mount Package Saves Board Space AEC−Q101 Qualified and PPAP Capable − MVGSF1N03LT1 These Devices are Pb−Free and are RoHS Compliant ID MAX 2.1 A 125 mW @ 4.5 V N−Channel D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 2.1 A Parameter G Continuous Drain Current RqJL Steady State TA = 25°C Power Dissipation RqJL Steady State TA = 25°C PD 0.69 W MARKING DIAGRAM/ PIN ASSIGNMENT Continuous Drain Current (Note 1) Steady State TA = 25°C ID 1.6 A 3 Drain Power Dissipation (Note 1) TA = 85°C TA = 85°C TA = 25°C Pulsed Drain Current S 1.5 1.2 PD 0.42 W 1 SOT−23 CASE 318 STYLE 21 N3 M G G tp = 10 ms IDM 6.0 A C = 100 pF, RS = 1500 W ESD 125 V TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A Lead Temperature for Soldering Purposes (1/8” from case for 10 sec) TL 260 °C (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Symbol Max Unit ORDERING INFORMATION Junction−to−Foot − Steady State RqJL 180 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 300 Junction−to−Ambient − t < 10 s (Note 1) RqJA 250 Junction−to−Ambient − Steady State (Note 2) RqJA 400 ESD Capability (Note 3) Operating Junction and Storage Temperature THERMAL RESISTANCE RATINGS Parameter Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 650 mm2, 1 oz. Cu pad size. 2. Surface−mounted on FR4 board using 50 mm2, 1 oz. Cu pad size. 3. ESD Rating Information: HBM Class 0. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 10 1 N3 M G 1 Gate 2 Source = Specific Device Code = Date Code* = Pb−Free Package Package Shipping† MGSF1N03LT1G SOT−23 Pb−Free 3000 / Tape & Reel MGSF1N03LT3G SOT−23 (Pb−Free) 10000 / Tape & Reel MVGSF1N03LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MGSF1N03LT1/D MGSF1N03L, MVGSF1N03L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.08 0.125 0.10 0.145 mAdc ON CHARACTERISTICS (Note 4) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − pF Output Capacitance (VDS = 5.0 Vdc) Coss − 100 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 5) VSD − 0.8 − SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 W) Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 2.5 VGS = 3.75 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VDS = 10 V 2 1.5 - 55°C 1 TJ = 150°C 0.5 3.5 V 2 1.5 3.25 V 1 3.0 V 0.5 2.75 V 25°C 0 1 1.5 2 2.5 3 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.5 V 0 3.5 0 2 4 6 8 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics http://onsemi.com 2 10 MGSF1N03L, MVGSF1N03L RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 0.24 150°C 0.19 VGS = 4.5 V 25°C 0.14 -55°C 0.09 0.04 0 0.1 0.3 0.2 0.4 0.5 0.7 0.6 0.8 0.9 1 0.16 150°C 0.14 VGS = 10 V 0.12 0.1 25°C 0.08 -55°C 0.06 0.04 0 0.2 0.4 ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 10 V ID = 2 A 1.2 VGS = 4.5 V ID = 1 A 1 0.8 0.6 0.4 0.2 0 -55 1.2 1.4 1.6 1.8 2 10 VDS = 24 V TJ = 25°C 8 6 4 ID = 2.0 A 2 0 0 -25 50 25 75 100 125 150 0 1000 TJ, JUNCTION TEMPERATURE (°C) 3000 2000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 350 1 VGS = 0 V f = 1 MHz TJ = 25°C 300 TJ = 150°C 0.1 25°C -55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 1 ID, DRAIN CURRENT (AMPS) 1.8 1.4 0.8 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.6 0.6 0.01 250 200 150 Ciss 100 Coss 50 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 Crss 0 4 8 12 16 VDS, DRAIN-TO-SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance http://onsemi.com 3 20 MGSF1N03L, MVGSF1N03L TYPICAL ELECTRICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 10 10 ms 100 ms 1 ms 1 10 ms 0.1 0 V < VGS < 10 V Single Pulse TJ = 150°C, TC = 25°C 0.01 0.1 1 ms RDS(on) Limit Thermal Limit Package Limit dc 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 9. Maximum Rated Forward Biased Safe Operating Area TRANSIENT THERMAL RESPONSE − RqJA (°C/W) 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 0.1 0.000001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 10. Thermal Response http://onsemi.com 4 1 10 100 1000 MGSF1N03L, MVGSF1N03L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0° −−− 10 ° 0° −−− 10° D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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