Fairchild FZT649 Npn low saturation transistor Datasheet

July 1998
FZT649
C
B
C
E
SOT-223
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
FZT649
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
35
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current - Continuous
3
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Parameter
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Max
Characteristic
Symbol
Units
FZT649
PD
Total Device Dissipation
RθJA
Thermal Resistance, Junction to Ambient
 1998 Fairchild Semiconductor Corporation
2
W
62.5
°C/W
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FZT649
Discrete Power & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10 mA
25
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100 µA
35
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100 µA
5
V
ICBO
Collector Cutoff Current
VCB = 30 V
100
VCB = 30 V, TA=100°C
10
nA
uA
VEB = 4V
100
nA
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
VCE(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
IC = 50 mA, VCE = 2 V
70
IC = 1 A, VCE = 2 V
100
IC = 2 A, VCE = 2 V
75
IC = 6 A, VCE = 2 V
15
300
IC = 1 A, IB = 100 mA
300
mV
IC = 3 A, IB = 300 mA
600
1.25
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1 A, IB = 100 mA
VBE(on)
Base-Emitter On Voltage
IC = 1 A, VCE = 2 V
1
V
50
pF
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1MHz
fT
Transition Frequency
IC = 100 mA,VCE = 5 V, f=100MHz
150
-
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
 1998 Fairchild Semiconductor Corporation
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FZT649
NPN Low Saturation Transistor
 1998 Fairchild Semiconductor Corporation
Page 3 of 2
fzt649.lwpPrNC 7/10/98 revB
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