Intersil BUZ60 5.5a, 400v, 1.000 ohm, n-channel power mosfet Datasheet

BUZ60
Semiconductor
Data Sheet
5.5A, 400V, 1.000 Ohm, N-Channel Power
MOSFET
October 1998
File Number 2260.1
Features
• 5.5A, 400V
[ /Title
This is an N-Channel enhancement mode silicon gate power
• rDS(ON) = 1.000Ω
(BUZ60 field effect transistor designed for applications such as
• SOA is Power Dissipation Limited
)
switching regulators, switching converters, motor drivers,
/Sub• Nanosecond Switching Speeds
relay drivers, and drivers for high power bipolar switching
transistors
requiring
high
speed
and
low
gate
drive
power.
ject
• Linear Transfer Characteristics
(5.5A, This type can be operated directly from integrated circuits.
• High Input Impedance
400V,
Formerly developmental type TA17414.
• Majority Carrier Device
1.000
Ordering Information
• Related Literature
Ohm,
- TB334 “Guidelines for Soldering Surface Mount
PACKAGE
BRAND
N-Chan- PART NUMBER
Components to PC Boards”
BUZ60
TO-220AB
BUZ60
nel
Power NOTE: When ordering, use the entire part number.
Symbol
MOSD
FET)
/Author
G
()
/KeyS
words
(Harris
Semiconduc- Packaging
tor, NJEDEC TO-220AB
ChanSOURCE
nel
DRAIN
GATE
Power
DRAIN (FLANGE)
MOSFET,
TO220AB)
/Creator ()
/DOCIN
FO pdfmark
[ /PageMode
/Use-
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998
BUZ60
TC = 25oC, Unless Otherwise Specified
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
BUZ60
400
400
5.5
22
±20
75
0.6
-55 to 150
E
55/150/56
UNITS
V
V
A
A
V
W
W/oC
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
400
-
-
V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1mA (Figure 9)
Zero Gate Voltage Drain Current
2.1
3
4
V
TJ = 25oC, VDS = 400V, VGS = 0V
TJ = 125oC, VDS = 400V, VGS = 0V
-
20
250
µA
-
100
1000
µA
VGS = 20V, VDS = 0V
-
10
100
nA
rDS(ON)
ID = 2.5A, VGS = 10V (Figure 8)
-
0.9
1
Ω
gfs
VDS = 25V, ID = 2.5A (Figure 11)
1.7
2.5
-
S
-
30
45
ns
-
40
60
ns
td(OFF)
-
110
140
ns
tf
-
50
65
ns
IDSS
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
Fall Time
VCC = 30V, ID ≈ 2.7A, VGS = 10V, RGS = 50Ω,
RL = 10Ω. (Figures 14, 15)
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
-
1.5
2
pF
-
120
180
pF
-
35
60
pF
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Thermal Resistance Junction to Case
RθJC
≤1.67
oC/W
Thermal Resistance Junction to Ambient
RθJA
≤75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
Pulsed Source to Drain Current
ISD
TEST CONDITIONS
TC = 25oC
ISDM
Source to Drain Diode Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
MIN
TYP
MAX
-
-
5.5
A
-
-
22
A
TJ = 25oC, ISD = 11A, VGS = 0V
-
1.15
1.6
V
TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs,
VR = 100V
-
1000
-
ns
-
5
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
2
UNITS
BUZ60
Unless Otherwise Specified
1.2
6
1.0
5
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
Typical Performance Curves
0.8
0.6
0.4
0.2
VGS ≥ 10V
4
3
2
1
0
0
25
125
50
75
100
TC , CASE TEMPERATURE (oC)
0
150
ZθJC, TRANSIENT THERMAL IMPEDANCE
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
1
0
50
100
TC, CASE TEMPERATURE (oC)
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
0.5
0.2
0.1
PDM
0.05
0.02
0.01
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
12
TJ = MAX RATED
TC = 25oC
1µs
101
10µs
100µs
100
10-1
100
VGS = 20V
10
OPERATION IN THIS
AREA MAY BE LIMITED
BY rDS(ON)
1ms
10ms
100ms
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
102
8
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
3
103
VGS = 7.5V
8.0V
10V
VGS = 7.0V
VGS = 6.5V
6
VGS = 6.0V
VGS = 5.5V
4
VGS = 5.0V
2
VGS = 4.5V
DC
101
102
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
PD = 75W
0
VGS = 4.0V
0
10
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
40
BUZ60
10
Unless Otherwise Specified (Continued)
4
PULSE DURATION = 80µs
VDS = 25V
TJ = 25oC
rDS(ON), ON-STATE RESISTANCE (Ω)
IDS(ON), DRAIN TO SOURCE CURRENT (A)
Typical Performance Curves
5
0
VGS = 5V
5
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
ID = 2.5A
VGS = 10V
1.0
0.5
-50
0
50
100
150
1
0
2
4
gfs, TRANSCONDUCTANCE (S)
C, CAPACITANCE (nF)
CISS
100
VGS = 0, f = 1MHz
CISS = CGS +CGD
CRSS = CGD
COSS = CDS +CGS
COSS
CRSS
40
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4
12
VDS = VGS, ID = 1mA
3
2
1
0
-50
5
10
20
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0
50
100
150
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
101
0
4
6
8
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
10-2
7V
7.5V
8V
9V
10V
20V
TJ, JUNCTION TEMPERATURE (oC)
10-1
6.5V
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.5
0
6V
2
10
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2.0
5.5V
3
0
0
FIGURE 6. TRANSFER CHARACTERISTICS
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
PULSE DURATION = 80µs
VDS = 25V
TJ = 25oC
4
3
2
1
0
0
5
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
10
BUZ60
Typical Performance Curves
15
PULSE DURATION = 80µs
101
TJ = 150oC
TJ = 25oC
100
10-1
0
ID = 8.3A
VGS, GATE TO SOURCE VOLTAGE (V)
ISD, SOURCE TO DRAIN CURRENT (A)
102
Unless Otherwise Specified (Continued)
0.5
1.0
1.5
2.0
2.5
VSD, SOURCE TO DRAIN VOLTAGE (V)
10
VDS = 80V
VDS = 320V
5
0
3.0
0
10
30
20
40
50
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
RG
-
VDD
10%
10%
0
DUT
90%
VGS
VGS
0
FIGURE 14. SWITCHING TIME TEST CIRCUIT
0.2µF
50%
PULSE WIDTH
10%
FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
0.3µF
VGS
Qgs
D
VDS
DUT
G
0
Ig(REF)
S
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 16. GATE CHARGE TEST CIRCUIT
5
Ig(REF)
0
FIGURE 17. GATE CHARGE WAVEFORMS
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