Vishay BAS81-GS08 Small signal schottky diode Datasheet

BAS81 / 82 / 83
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
e2
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9371
Applications
Mechanical Data
•
•
•
•
•
•
Case: MiniMELF Glass case SOD80
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
HF-Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Parts Table
Part
Type differentiation
Ordering code
Remarks
BAS81
VR = 40 V
BAS81-GS18 or BAS81-GS08
Tape and Reel
BAS82
VR = 50 V
BAS82-GS18 or BAS82-GS08
Tape and Reel
BAS83
VR = 60 V
BAS83-GS18 or BAS83-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Document Number 85509
Rev. 1.7, 15-Mar-06
tp = 1 s
Part
Symbol
Value
Unit
BAS81
VR
40
V
BAS82
VR
50
V
BAS83
VR
60
V
mA
IFSM
500
IFRM
150
mA
IF
30
mA
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BAS81 / 82 / 83
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Test condition
Symbol
Value
Unit
on PC board 50 mm x 50 mm x 1.6 mm
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Max
Unit
330
mV
VF
410
mV
VF
1000
mV
VR = VRmax
IR
200
nA
VR = 1 V, f = 1 MHz
CD
1.6
pF
IF = 0.1 mA
VF
IF = 1 mA
IF = 15 mA
Reverse current
Diode capacitance
Forward voltage
Min
Typ.
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
V R = 60 V
V R = VRRM
12
I R - Reverse Current (µA)
PR - Reverse Power Dissipation (mW)
14
R thJA = 540 K/W
10
8
PRR - Limit at 100 % VRR
6
4
PR - Limit at 80 % VR
10
1
2
0.1
25
0
25
15794
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
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100
15795
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
Document Number 85509
Rev. 1.7, 15-Mar-06
BAS81 / 82 / 83
Vishay Semiconductors
2.0
CD - Diode Capacitance (pF)
I F - Forward Current (A)
1000
100
Tj =150 °C
10
Tj = 25 °C
1
0.1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0
15796
0.5
1
1.5
2.0
0.1
V F - Forward Voltage (V)
1
Figure 3. Forward Current vs. Forward Voltage
10
100
V R - Reverse Voltage (V)
15797
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm (Inches)
1.6 (0.063)
1.4 (0.055)
Cathode indification
0.47 max. (0.019)
3.7 (0.146)
3.3 (0.130)
2.5 (0.098) max
1.25 (0.049) min
2.0 (0.079) min
foot print recommendation:
5.0 (0.197) ref
Document no.: 6.560-5005.01-4
Rev. 7 - Date: 07.February.2005
96 12070
Document Number 85509
Rev. 1.7, 15-Mar-06
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BAS81 / 82 / 83
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85509
Rev. 1.7, 15-Mar-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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Document Number: 91000
Revision: 18-Jul-08
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