CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 1/6 High Frequency NPN Switching Transistor BTN2369S3 Description • High transition frequency, fT=500MHz(min) • High current, IC(max)=200mA • Low saturation voltage, VCE(SAT)=0.3V(max) • Pb-free lead plating package Symbol Outline BTN2369S3 SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 40 15 4.5 200 300 150 -55~+150 V V V mA mW °C °C Note: When mounted on FR-4 PCB with area measuring 50×50×1.6 mm BTN2369S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 40 15 4.5 700 70 70 20 500 - Typ. - Max. 100 100 250 300 850 1 140 140 4 Unit V V V nA nA mV mV mV V MHz pF Test Conditions IC=50µA IC=1mA IE=50µA VCB=40V VEB=4.5V IC=10mA, IB=1mA IC=20mA, IB=1mA IC=10mA, IB=1mA IC=20mA, IB=1mA VCE=6V, IC=1mA VCE=1V, IC=10mA VCE=2V, IC=100mA VCE=10V, IC=10mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device Package Shipping Marking BTN2369S3 SOT-323 (Pb-free lead plating package) 3000 pcs / Tape & Reel 1J BTN2369S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 3/6 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 Saturation Voltage---(mV) Current Gain--- HFE HFE VCE=6V VCE=2V 100 VCE=1V VCE(SAT) 100 IC=10IB IC=5IB IC=20IB 10 10 0.1 1 10 100 Collector Current --- IC(mA) 0.1 1000 Saturation Voltage vs Collector Current 1 10 100 Collector Current --- IC(mA) 1000 Capacitance Characteristics 10 Saturation Voltage---(mV) 1000 fT=1MHz Capacitance---(pF) IC=10IB IC=20IB Cob VBE(SAT) 1 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 Reverse-biased Voltage---(V) 100 Power Derating Curve Power Dissipation---PD(mW) 350 300 See Note on page 1 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTN2369S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTN2369S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTN2369S3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C229S3 Issued Date : 2011.10.05 Revised Date : Page No. : 6/6 SOT-323 Dimension Marking: 3 A Q A1 1 C TE 1J Lp 2 detail Z bp e1 W B e E D A Z 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 θ He 0 v Style: Pin 1.Base 2.Emitter 3.Collector 2 mm 1 A scale *: Typical Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - DIM A A1 bp C D E e Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN2369S3 CYStek Product Specification