MCC Features • • • • High Forward Surge Capability Ideal for printed circuit boards High Temperature Soldering: 250oC for 10 seconds Reliable low cost construction utilizing molded plastic technique Maximum Ratings • • • HDB101G THRU HDB107G omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C For Capacitive Load, Derate Current by 20% MCC Part Number HDB101G HDB102G HDB103G HDB104G HDB105G HDB106G HDB107G Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V DB-1 Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V Notch ~ B + C ~ A E Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage HDB101G-103G HDB104G HDB105G-107G Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time HDB101G-104G HDB105G-107G IF(AV) IFSM VF IR Trr 1.0 A 50A TC = 40°C G 8.3ms, half sine TJ=150oC 1.0V 1.3V 1.7V IFM = 1.0A; TC = 25°C 5.0µA 500uA TC = 25°C TC = 125°C 50ns 75ns D F DIMENSIONS INCHES DIM A B C D E F G MIN .320 .245 .300 .236 .120 .016 .195 MAX .335 .255 .350 .283 .130 .022 .205 MM MIN 8.13 6.2 7.60 6.01 3.05 0.41 5.00 MAX 8.51 6.5 8.90 7.20 3.3 0.56 5.20 NOTE IF=0.5A, IR=1.0A, Irr=0.25A www.mccsemi.com Version: 3 2003/01/30 MCC HDB101G thru HDB107G FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 10W NONINDUCTIVE 50W NONINDUCTIVE trr 1.0 +0.5A PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) 0 -0.25A (+) 1cm FIG.3- TYPICAL REVERSE CHARACTERISTICS 40 60 80 100 120 140 150 o AMBIENT TEMPERATURE. ( C) FIG.4- TYPICAL FORWARD CHARACTERISTICS 1.0 Tj=25 0C 0 20 40 60 80 100 .4 25 20 15 10 5 10 20 NUMBER OF CYCLES AT 60Hz 7G 10 DB B1 0 6G ~H G 05 HD B1 1.0 1.2 1.4 70 JUNCTION CAPACITANCE.(pF) 8.3ms Single Half Sine Wave JEDEC Method 2 B10 HD 1G~ .2 FIG.6- TYPICAL JUNCTION CAPACITANCE 35 1 .8 0.01 FORWARD VOLTAGE. (V) FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 .6 0.1 0.001 120 HD 10 B10 Tj=125 0C Tj=25 0C 1.0 HD 100 4G 10 INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 60Hz RESISTIVE OR INDUCTIVE LOAD 20 SET TIME BASE FOR 5/ 10ns/ cm PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) PEAK FORWARD SURGE CURRENT. (A) Copper Pauls .51" x .51" (13mm x 13mm) 0.5 0 1000 0 PCB -1.0A NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0.1 .06" (1.5mm) AVERAGE FORWARD CURRENT. (A) (+) 50Vdc (approx) (-) (-) DUT 50 100 60 50 40 HD B10 1G~ HD B10 HDB 5G 106 G~H DB1 07G 30 20 Tj=25 0C 10 0 .1 .5 1 2 5 10 20 50 100 200 500 REVERSE VOLTAGE. (V) www.mccsemi.com Version: 3 2003/01/30