UNISONIC TECHNOLOGIES CO., LTD MMBT9018 AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER NPN SILICON TRANSISTOR 3 1 2 * High Current Gain Bandwidth Product fT=1.1GHz (Typ) 3 2 SOT-23 FEATURES 1 SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 MMBT9018-x-AE3-R MMBT9018L-x-AE3-R MMBT9018G-x-AE3-R SOT-23 E B C Tape Reel MMBT9018-x-AN3-R MMBT9018L-x-AN3-R MMBT9018G-x-AN3-R SOT-523 E B C Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-032.C MMBT9018 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT 30 V 15 V 5 V 50 mA SOT-23 225 mW Collector Power Dissipation Pc SOT-523 150 mW °C Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage DC Current Gain Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO VCE(SAT) hFE fT COB TEST CONDITIONS IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, Ic=0 VCB=12V, IE=0 IC=10mA, IB=1mA VCE=5V, IC=1mA VCE=5V, IC=5mA VCB=10V, IE=0, f=1MHz MIN 30 15 5 28 700 TYP 100 1100 1.3 MAX 50 0.5 198 1.7 UNIT V V V nA V MHz pF CLASSIFICATION of hFE RANK RANGE D 28-45 E 39-60 F 54-80 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw G 72-108 H 97-146 I 132-198 J 180-265 2 of 4 QW-R206-032.C MMBT9018 TYPICAL CHARACTERISTICS Static Characteristics IB=90µA 8 IB=80µA IB=70µA IB=60µA IB=50µA 7 6 5 IB=40µA 4 IB=30µA 3 IB=20µA 2 VCE=5V 100 IB=10µA 1 0 0 DC Current Gain 1000 DC Current Gain, hFE Collector Current, IC (mA) 10 9 10 1 2 3 4 5 6 7 8 9 10 Collector-Emitter Voltage, VCE ( V) 1 10 Collector Current, IC (mA) Capacitance, Cob (pF) Saturation Voltage, VBE(SAT), VCE(SAT) (V) NPN SILICON TRANSISTOR Current Gain Bandwidth Product VCE=5V 1000 100 0.1 1 10 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-032.C MMBT9018 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-032.C